公开(公告)号：US20080211602A1

公开(公告)日：2008-09-04

申请号：US11884499

申请日：2006-02-16

申请人： Abdelkrim Khelif ,  Abdelkrim Choujaa ,  Vincent Laude

发明人： Abdelkrim Khelif ,  Abdelkrim Choujaa ,  Vincent Laude

IPC分类号： H03H9/25 ,  H01L41/22 ,  H01L41/083

CPC分类号： H03H9/02228 ,  H03H3/04 ,  H03H9/02574 ,  H03H9/175 ,  Y10T29/42

摘要： An acoustic wave device comprising a piezoelectric layer on an omnidirectional acoustic mirror and excitation and/or reception means on a surface of said piezoelectric layer, capable of exciting waves in a band gap of the acoustic mirror.

摘要翻译： 一种声波装置，其包括在全向声镜上的压电层和在所述压电层的表面上的激励和/或接收装置，其能够激发声镜的带隙中的波。

公开(公告)号：US20080211350A1

公开(公告)日：2008-09-04

申请号：US11840339

申请日：2007-08-17

申请人： Hideo TANAYA ,  Yoshiyuki YAMADA ,  Yukihiro TONEGAWA ,  Katsumi KURODA

发明人： Hideo TANAYA ,  Yoshiyuki YAMADA ,  Yukihiro TONEGAWA ,  Katsumi KURODA

IPC分类号： H03H9/205 ,  H01L41/047 ,  H01L41/053

CPC分类号： H03H9/1021 ,  H03H3/04 ,  H03H9/21 ,  H03H2003/026 ,  H03H2003/0492

摘要： A piezoelectric resonator element includes: a base in a predetermined length, the base being made of a piezoelectric material; a plurality of resonating arms extending from a first end of the base; a joining part connected to a second end apart from the first end of the base by a predetermined distance; a connecting part connected to the joining part and extending in a width direction of the piezoelectric resonator element; a supporting arm connected to the connecting part and extending in a same direction as the resonating arm at an outer side of the plurality of resonating arms. A ratio L3/h is 40% or less where h is a length dimension from the first end of the base to the second end opposite to the resonating arms of the piezoelectric resonator element, and L3 is a width dimension of the connecting part connecting the supporting arm to the base through the joining part.

摘要翻译： 压电谐振元件包括：预定长度的基座，该基座由压电材料制成; 多个谐振臂，从所述基座的第一端延伸; 连接部，其与距离所述基座的所述第一端部隔开预定距离的第二端部; 连接部，其与所述接合部连接并且在所述压电谐振器元件的宽度方向上延伸; 支撑臂连接到连接部分并且在与多个谐振臂的外侧处的谐振臂相同的方向上延伸。 比率L 3 / h为40％以下，其中h是从基座的第一端到与压电谐振元件的谐振臂相反的第二端的长度尺寸，L 3是连接部的宽度尺寸 通过接合部将支撑臂连接到基座。

公开(公告)号：US20080180193A1

公开(公告)日：2008-07-31

申请号：US12019330

申请日：2008-01-24

申请人： Tomohiro IWASAKI ,  Hiroshi NAKATSUKA ,  Keiji ONISHI ,  Takehiko YAMAKAWA ,  Tomohide KAMIYAMA

发明人： Tomohiro IWASAKI ,  Hiroshi NAKATSUKA ,  Keiji ONISHI ,  Takehiko YAMAKAWA ,  Tomohide KAMIYAMA

IPC分类号： H03H9/54 ,  H01L41/22

CPC分类号： H03H9/564 ,  H03H3/04 ,  H03H9/0207 ,  H03H2003/0428 ,  Y10T29/42

摘要： A dual mode piezoelectric filter includes a piezoelectric material layer composed of a piezoelectric thin film of the high-cut type formed on a substrate, a first electrode and a second electrode formed on one of the major surfaces of the piezoelectric material layer with a gap provided therebetween, a third electrode formed on the other major surface of the piezoelectric material layer opposite to the first electrode, the second electrode, and the gap, and an interelectrode mass load element formed in the gap or at a position opposite to the gap on a surface of the piezoelectric material layer. The relationships (p1×h1)≦(pa×ha) and (p2×h2)≦(pa×ha) are satisfied, where h1 is the thickness and p1 is the density of the first electrode, h2 is the thickness and p2 is the density of the second electrode, and ha is the thickness and pa is the density of the interelectrode mass load element. A filter characteristic with a smooth passband and low losses is obtained.

摘要翻译： 双模式压电滤波器包括由形成在基板上的高切割类型的压电薄膜构成的压电材料层，第一电极和形成在压电材料层的一个主表面上的间隔设置的第二电极 其间形成在压电材料层的与第一电极，第二电极和间隙相反的另一个主表面上的第三电极，以及形成在间隙中或与间隙相对的位置处的电极间质量负载元件 压电材料层的表面。 满足关系式（p 1x h1）<=（paxha）和（p 2x h2）<=（paxha），其中h 1是厚度，p 1是第一电极的密度，h 2是厚度和p 2是第二电极的密度，ha是厚度，pa是电极间质量负载元件的密度。 获得具有平滑通带和低损耗的滤波器特性。

公开(公告)号：US07394326B2

公开(公告)日：2008-07-01

申请号：US10590719

申请日：2005-03-28

申请人： Maki Takizawa ,  Tohru Yanagisawa

发明人： Maki Takizawa ,  Tohru Yanagisawa

IPC分类号： H03B5/30

CPC分类号： H03H9/215 ,  G01C19/56 ,  G01C25/00 ,  H03H3/04 ,  H03H2003/0407

摘要： A method for manufacturing a quartz oscillator having a stable temperature drift characteristic attributed to the quartz oscillating piece and a quartz oscillator are disclosed.The method comprises a quartz crystal etching step S1 of processing a quartz oscillating piece into a predetermined shape by etching, an electrode membrane forming step S2 of forming an electrode on the quartz oscillating piece, a quartz crystal mounting step S3 of mounting the quartz oscillating piece in an oscillator package, a leakage oscillation adjusting step S4 of driving the mounted quartz oscillating piece, detecting the leakage oscillation, and removing a part of the quartz oscillating piece depending on the detected leakage oscillation, and a re-etching step S6 of re-etching the quartz oscillating piece subjected to the removal.

摘要翻译： 公开了一种用于制造具有归因于石英振荡片和石英振荡器的稳定温度漂移特性的石英振荡器的方法。 该方法包括通过蚀刻将石英振荡片加工成预定形状的石英晶体蚀刻步骤S1，在石英振荡片上形成电极的电极膜形成步骤S2，安装 振荡器封装中的石英振荡片，驱动安装的石英振荡片的泄漏振荡调节步骤S 4，检测泄漏振荡，以及根据检测到的泄漏振荡去除石英振荡片的一部分，以及再蚀刻步骤 再次蚀刻经过去除的石英振荡片的S 6。

公开(公告)号：US20080129412A1

公开(公告)日：2008-06-05

申请号：US11891368

申请日：2007-08-10

申请人： Yasuo Osone ,  Chiko Yorita ,  Yuji Shirai ,  Seiichi Tomoi

发明人： Yasuo Osone ,  Chiko Yorita ,  Yuji Shirai ,  Seiichi Tomoi

IPC分类号： H03H9/70 ,  H03H9/54

CPC分类号： H03H3/04 ,  H03H9/564 ,  H03H9/589 ,  H03H2003/025

摘要： A technique capable of integrally forming SMR type acoustic wave filters corresponding to multiple bands on the same chip at low cost is provided. In SMR type acoustic wave filters including multiple bandpass filters corresponding to multiple bands formed over the same die (substrate), acoustic multilayer films are formed without or with a minimum number of masks and piezoelectric thin films having different thicknesses for respective bands are collectively formed. For example, after the acoustic multilayer films (low acoustic impedance layers and high acoustic impedance layers) are formed in a deep groove in a terrace paddy field shape over the die in a maskless manner, the piezoelectric thin films are c-axis-oriented and grown, and are polished by CMP method or the like to be adjusted in a thickness for respective bands, and therefore, the SMR type acoustic wave filters for multiple bands are formed over the same chip.

摘要翻译： 提供了能够以低成本一体地形成对应于同一芯片上的多个频带的SMR型声波滤波器的技术。 在包括对应于形成在同一芯片（基板）上的多个带的多个带通滤波器的SMR型声波滤波器中，形成声学多层膜，而不需要最少数量的掩模，并且共同形成具有不同厚度的压电薄膜。 例如，在以无掩模的方式在模具上形成在平台水田的深槽中的声学多层膜（低声阻抗层和高声阻抗层）之后，压电薄膜是c轴取向的， 并通过CMP方法等进行抛光，以对各个带的厚度进行调整，因此，在同一芯片上形成多个带的SMR型声波滤波器。

公开(公告)号：US07370396B2

公开(公告)日：2008-05-13

申请号：US11564142

申请日：2006-11-28

申请人： Akihiko Namba ,  Keiji Onishi ,  Katsu Takeda

发明人： Akihiko Namba ,  Keiji Onishi ,  Katsu Takeda

IPC分类号： H01L41/22 ,  H01L41/00

CPC分类号： H03H9/564 ,  B41J2002/14266 ,  H03H3/04 ,  H03H9/173 ,  H03H9/174 ,  H03H9/175 ,  H03H2003/0435 ,  H03H2003/0478 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49135

摘要： An electronic component includes a substrate; a piezoelectric material layer supported directly or indirectly by the substrate; a first electrode arranged on a surface of the piezoelectric material layer on an opposite side of the substrate; and a second electrode arranged on a surface of the piezoelectric material layer on the substrate side. The piezoelectric material layer is sandwiched between the first electrode and the second electrode. The first electrode has a smaller surface area than the piezoelectric material layer. A portion where the piezoelectric material layer is exposed from the first electrode includes a portion that is thinner than a thickness of the piezoelectric material layer between the first electrode and the second electrode. Thus, it is possible to configure a resonator with a higher frequency than its ordinary resonance, and it is easy to achieve an adjustment of the resonance frequency of the resonator, as well as improving the yield of the component and enabling the configuration of an electronic component that includes a plurality of resonators of different frequencies.

摘要翻译： 电子部件包括基板; 由衬底直接或间接支撑的压电材料层; 布置在所述压电材料层的与所述基板相反的一侧的表面上的第一电极; 以及设置在基板侧的压电体层的表面上的第二电极。 压电材料层夹在第一电极和第二电极之间。 第一电极具有比压电材料层更小的表面积。 压电材料层从第一电极露出的部分包括比第一电极和第二电极之间的压电材料层的厚度薄的部分。 因此，可以构成具有比其普通谐振更高的频率的谐振器，并且容易实现谐振器的谐振频率的调节，以及提高元件的产量并且能够构造电子 分量，其包括多个不同频率的谐振器。

公开(公告)号：US20080048802A1

公开(公告)日：2008-02-28

申请号：US11930955

申请日：2007-10-31

申请人： Robert Aigner ,  Stephan Marksteiner ,  Winfried Nessler

发明人： Robert Aigner ,  Stephan Marksteiner ,  Winfried Nessler

IPC分类号： H03H9/00

CPC分类号： H03H9/585 ,  H03H3/04 ,  H03H9/0095 ,  H03H9/589 ,  H03H9/60 ,  Y10T29/42 ,  Y10T29/49126 ,  Y10T29/49128

摘要： A piezoelectric component comprises at least two stacked crystal filters on a substrate. Each stacked crystal filter comprises a bottom electrode, a first piezoelectric layer arranged above the bottom electrode, a central electrode arranged above the first piezoelectric layer, a second piezoelectric layer arranged above the central electrode, and a top electrode arranged above the second piezoelectric layer. The bottom electrodes are directly connected to one another and the central electrodes are directly connected to one another.

摘要翻译： 压电元件在衬底上包括至少两个堆叠的晶体滤波器。 每个堆叠的晶体滤波器包括底电极，布置在底电极上方的第一压电层，布置在第一压电层上方的中心电极，布置在中心电极上方的第二压电层和布置在第二压电层上方的顶电极。 底部电极彼此直接连接，并且中心电极彼此直接连接。

公开(公告)号：US20080028584A1

公开(公告)日：2008-02-07

申请号：US11869997

申请日：2007-10-10

申请人： Bradley Barber ,  Yiu-Huen Wong

发明人： Bradley Barber ,  Yiu-Huen Wong

IPC分类号： H04R17/10

CPC分类号： H03H9/131 ,  G04F5/063 ,  H03H3/04 ,  H03H9/175 ,  H03H2003/0428 ,  H04R15/02 ,  H04R17/10 ,  H04R31/00 ,  Y10S29/016 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49004 ,  Y10T29/49005

摘要： The present invention is a method for adjusting the resonant frequency of a mechanical resonator whose frequency is dependent on the overall resonator thickness. Alternating selective etching is used to remove distinct adjustment layers from a top electrode. One of the electrodes is structured with a plurality of stacked adjustment layers, each of which has distinct etching properties from any adjacent adjustment layers. Also as part of the same invention is a resonator structure in which at least one electrode has a plurality of stacked layers of a material having different etching properties from any adjacent adjustment layers, and each layer has a thickness corresponding to a calculated frequency increment in the resonant frequency of the resonator.

摘要翻译： 本发明是一种用于调节机械谐振器的谐振频率的方法，该机械谐振器的频率取决于整个谐振器厚度。 使用交替选择性蚀刻来从顶部电极去除不同的调节层。 其中一个电极由多个堆叠的调整层构成，每个层都具有与任何相邻的调整层不同的蚀刻特性。 同样的发明的一部分也是一种共振器结构，其中至少一个电极具有与任何相邻的调整层具有不同蚀刻性能的材料的多个堆叠层，并且每个层的厚度对应于计算出的 谐振器的谐振频率。

公开(公告)号：US20080024042A1

公开(公告)日：2008-01-31

申请号：US11627858

申请日：2007-01-26

申请人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto ,  Nobuhiko Shibagaki

发明人： Atsushi Isobe ,  Kengo Asai ,  Hisanori Matsumoto ,  Nobuhiko Shibagaki

IPC分类号： H01L41/047

CPC分类号： H03H9/02228 ,  H03H3/04 ,  H03H9/173 ,  H03H9/175 ,  H03H9/564 ,  H03H9/568 ,  H03H9/605 ,  H03H2003/0428 ,  H03H2003/0457 ,  H03H2003/0471

摘要： An object of the present invention is to provide an inexpensive thin film piezoelectric bulk acoustic wave resonator that allows fine-tuning of a resonant frequency. Another object is to provide an inexpensive filter with dramatically improved frequency characteristics, using thin film piezoelectric bulk acoustic wave resonators that can be formed on one substrate. A thin film piezoelectric bulk acoustic wave resonator of the present invention has a laminated structure including a piezoelectric thin film, and a first metal electrode film and a second metal electrode film between which part of the piezoelectric thin film is sandwiched; the first metal electrode film has a plurality of holes formed on an electrode plane opposite to the second metal electrode film and having a depth equivalent to at least the thickness of the first metal electrode film; and if a combined thickness of top and bottom electrode layers and the piezoelectric thin film is ht, the covering ratio σ of the electrode plane of the first metal electrode film satisfies a condition 0

摘要翻译： 本发明的目的是提供一种廉价的薄膜压电体声波谐振器，其允许谐振频率的微调。 另一个目的是提供一种具有显着改善的频率特性的便宜的滤波器，使用可以在一个基板上形成的薄膜压电体声波谐振器。 本发明的薄膜压电体声波谐振器具有包括压电薄膜和第一金属电极薄膜和第二金属电极薄膜的叠层结构，压电薄膜的一部分夹在其间; 所述第一金属电极膜具有形成在与所述第二金属电极膜相反的电极面上并且具有至少等于所述第一金属电极膜的厚度的深度的多个孔; 并且如果顶部和底部电极层和压电薄膜的组合厚度为ht，则对于每1.28ht间距，第一金属电极膜的电极平面的覆盖比sigma满足条件0 <σ<1。

公开(公告)号：US07320164B2

公开(公告)日：2008-01-22

申请号：US11097888

申请日：2005-03-31

申请人： Hajime Yamada ,  Masaki Takeuchi ,  Hideki Kawamura ,  Yukio Yoshino

发明人： Hajime Yamada ,  Masaki Takeuchi ,  Hideki Kawamura ,  Yukio Yoshino

IPC分类号： H01L41/047

CPC分类号： H01L41/316 ,  H03H3/04 ,  H03H9/132 ,  H03H9/173 ,  H03H9/174 ,  Y10T29/42 ,  Y10T29/49156

摘要： A manufacturing method for an electronic component includes a process of forming a lower electrode and a dummy electrode, which are electrically connected to each other, on a substrate, and a process of forming a piezoelectric thin film on the dummy electrode and the lower electrode while a predetermined bias potential is applied to the lower electrode via the dummy electrode. In this method, the piezoelectric thin film is formed on the lower electrode by stabilizing the potential of the lower electrode, thereby decreasing the surface roughness of the piezoelectric thin film. It is thus possible to manufacture an electronic component that exhibits excellent piezoelectric characteristics, in which the electromechanical coupling coefficient and the quality factor of a resonator are increased.

摘要翻译： 电子部件的制造方法包括在基板上形成彼此电连接的下电极和虚拟电极的处理以及在虚拟电极和下电极上形成压电薄膜的工艺，同时 经由虚拟电极向下部电极施加规定的偏置电位。 在该方法中，通过稳定下部电极的电位，在下部电极上形成压电薄膜，从而降低压电薄膜的表面粗糙度。 因此，可以制造显示优异的压电特性的电子部件，其中机电耦合系数和谐振器的品质因数增加。