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公开(公告)号：US07670727B2
公开(公告)日：2010-03-02
申请号：US11512954
申请日：2006-08-30
摘要： A zero power identical pair of oppositely-oriented meniscus lens elements mounted in the projection light path, serves as curved mask support while compensating for optical anomalies such as beam shift and beam deviations produced by other transparent supports for the curved mask. The zero-power meniscus lens pair, without affecting the transmission beam characteristics, lets the beam diffract as efficiently as does a regular planar mask, thus preserving the partial coherence effects and resolution concepts of projection lithography. This simple but novel optics device is not only expected to clear several barriers for curved mask projection lithography but also find place in other applications where collimated or converging light beams have to travel extra paths without significant aberration.
摘要翻译： 安装在投影光路中的零功率相同的一对相反方向的弯月透镜元件用作弯曲的掩模支撑，同时补偿光学异常，例如由弯曲掩模的其他透明支撑产生的光束偏移和光束偏移。 零功率弯月透镜对，不影响透射光束特性，使得光束像普通的平面掩模一样有效地衍射，从而保持投影光刻的部分相干效应和分辨率概念。 这种简单但新颖的光学器件不仅预期能够清除弯曲掩模投影光刻的几个障碍，而且还可以发现在其中准直或会聚光束必须行进额外路径而没有显着像差的其他应用场合。
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公开(公告)号：US20100009140A1
公开(公告)日：2010-01-14
申请号：US12559574
申请日：2009-09-15
CPC分类号： G03F1/00 , G03F7/201 , G03F7/703 , G03F7/7035 , Y10T428/24802
摘要： In a lithographic proximity method for wiring an end or internal side surface of a substrate the required exposure of strips (76), defining the wiring pattern, is performed by means of a mask (70) comprising a diffraction structure (74) to deflect exposure radiation (b) to the side surface. An exposure beam, which is perpendicularly incident on the mask, is used so that enhanced tolerance for proximity gap width variations is obtained. The method allows manufacture of accurate and fine wiring.
摘要翻译： 在用于布线基板的端侧或内侧表面的光刻接近方法中，通过包括衍射结构（74）的掩模（70）来执行限定布线图案的条（76）的所需曝光以偏转曝光 辐射（b）到侧面。 使用垂直入射到掩模上的曝光光束，从而获得增强的接近间隙宽度变化的公差。 该方法允许制造精确和精细的接线。
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公开(公告)号：US07567340B2
公开(公告)日：2009-07-28
申请号：US11529732
申请日：2006-09-29
CPC分类号： G03F7/70333 , G03F7/703
摘要： A device manufacturing method is disclosed that includes providing a substrate on a substrate table, the substrate having a target region comprising a plurality of generally planar surfaces, each surface having a different height relative to the substrate table, determining the relative heights of each generally planar surface, projecting a patterned beam of radiation onto the target region of the substrate such that the focal plane of the beam substantially coincides with the plane of one of the generally planar surfaces, moving the substrate table in a direction substantially parallel to the axis of the beam, and projecting the patterned beam of radiation onto the target region of the substrate such that the focal plane of the beam substantially coincides with the plane of another of the generally planar surfaces.
摘要翻译： 公开了一种器件制造方法，其包括在衬底台上提供衬底，所述衬底具有包括多个大体上平坦的表面的目标区域，每个表面相对于衬底台具有不同的高度，确定每个大致平面的相对高度 将图案化的辐射束投影到基板的目标区域上，使得光束的焦平面基本上与大体上平坦的表面之一的平面重合，使基板台沿基本上平行于基板平面的方向移动 并且将所述图案化的辐射束投影到所述基板的目标区域上，使得所述光束的焦平面基本上与所述大体上平坦的表面中的另一个的平面重合。
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94.发明申请METHODS AND APPARATUSES FOR CONFIGURING RADIATION IN MICROLITHOGRAPHIC PROCESSING OF WORKPIECES 审中-公开工件微雕加工中配置辐射的方法和装置公开(公告)号：US20090040494A1
公开(公告)日：2009-02-12
申请号：US12237169
申请日：2008-09-24
申请人： Erik Byers
发明人： Erik Byers
IPC分类号： G03B27/54
CPC分类号： G03B27/72 , G03F7/70258 , G03F7/703 , G03F7/70783
摘要： Methods and apparatuses for configuring radiation used in microlithographic processing of workpieces are disclosed herein. One particular embodiment of such a method comprises directing a radiation beam along a radiation path from a reticle to an adjustment structure. The radiation beam has a wavefront with a first configuration in an image plane generally transverse to the radiation path. The method continues by changing at least one independently controllable parameter of the adjustment structure to change the wavefront of the radiation beam from the first configuration to a second configuration. After changing the shape of the wavefront from the first configuration to the second configuration, the method continues by impinging the radiation beam on the workpiece.
摘要翻译： 本文公开了用于配置工件的微光刻处理中使用的辐射的方法和装置。 这种方法的一个具体实施例包括将辐射束沿着从掩模版到调节结构的辐射路径引导。 辐射束具有在通常横向于辐射路径的图像平面中具有第一配置的波前。 该方法通过改变调节结构的至少一个可独立控制的参数来继续，以将辐射束的波前从第一配置改变到第二配置。 在将波前的形状从第一配置改变为第二配置之后，该方法通过将辐射束照射在工件上而继续。
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95.发明申请Maunfacturing method for exposure mask, generating method for mask substrate information, mask substrate, exposure mask, manufacturing method for semiconductor device and server 有权曝光掩模的制造方法，掩模基板信息的生成方法，掩模基板，曝光掩模，半导体装置和服务器的制造方法公开(公告)号：US20090035880A1
公开(公告)日：2009-02-05
申请号：US12232567
申请日：2008-09-19
申请人： Masamitsu Itoh
发明人： Masamitsu Itoh
IPC分类号： H01L21/00
CPC分类号： G03F7/707 , G03F1/60 , G03F7/703 , G03F7/70433 , G03F7/70783 , Y10S438/975
摘要： There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate.
摘要翻译： 公开了一种用于曝光掩模的制造方法，其包括获取表示多个掩模基板中的每一个的表面的表面形状的第一信息，以及示出在夹持之前和之后每个掩模基板的表面的平坦度的第二信息 曝光装置的掩模台，形成每个掩模基板的对应关系，第一信息和第二信息，选择表示对应关系的第二信息之间的期望的平坦度的第二信息，以及准备另一掩模基板 表面形状作为由与所选择的第二信息的对应关系中的第一信息指示的表面形状，并且在上述另一掩模基板上形成期望的图案。
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96.发明授权System and method for detecting and correcting position deviations of an object having a curved surface 有权用于检测和校正具有曲面的物体的位置偏差的系统和方法公开(公告)号：US07333217B2
公开(公告)日：2008-02-19
申请号：US10538978
申请日：2002-12-20
申请人： Ichitaroh Satoh
发明人： Ichitaroh Satoh
IPC分类号： G01B11/14
CPC分类号： G01S17/88 , G01S17/89 , G03F7/24 , G03F7/70291 , G03F7/703 , G06K9/00 , G06K2209/19
摘要： A position deviation system and method detects and corrects position deviations between the optical axis of an optical system, such as an exposure apparatus, and the center of a curved shaped object, such as a spherical shaped semiconductor. The system determines position deviations by illuminating the curved surface, passing light that is reflected off of the illuminated curved surface through a first lens having an optical axis and a first body. An image having a substantially central portion is formed on a surface using the reflected light. The position deviation is determined based on a position of the substantially central portion of the formed image relative to the optical axis.
摘要翻译： 位置偏差系统和方法检测和校正诸如曝光装置的光学系统的光轴与诸如球形半导体的弯曲成形物体的中心之间的位置偏差。 该系统通过照射弯曲表面来确定位置偏差，使通过具有光轴和第一主体的第一透镜从被照射的曲面反射的光通过。 使用反射光在表面上形成具有大致中央部分的图像。 基于形成的图像的相对于光轴的大致中心部分的位置确定位置偏差。
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公开(公告)号：US20070024830A1
公开(公告)日：2007-02-01
申请号：US11512954
申请日：2006-08-30
申请人： Sivarama Kuchibhotla , Kanti Jain , Marc Klosner
发明人： Sivarama Kuchibhotla , Kanti Jain , Marc Klosner
IPC分类号： G03B27/68
摘要： A zero power identical pair of oppositely-oriented meniscus lens elements mounted in the projection light path, serves as curved mask support while compensating for optical anomalies such as beam shift and beam deviations produced by other transparent supports for the curved mask. The zero-power meniscus lens pair, without affecting the transmission beam characteristics, lets the beam diffract as efficiently as does a regular planar mask, thus preserving the partial coherence effects and resolution concepts of projection lithography. This simple but novel optics device is not only expected to clear several barriers for curved mask projection lithography but also find place in other applications where collimated or converging light beams have to travel extra paths without significant aberration.
摘要翻译： 安装在投影光路中的零功率相同的一对相反方向的弯月透镜元件用作弯曲的掩模支撑，同时补偿光学异常，例如由弯曲掩模的其他透明支撑产生的光束偏移和光束偏移。 零功率弯月透镜对，不影响透射光束特性，使得光束像普通的平面掩模一样有效地衍射，从而保持投影光刻的部分相干效应和分辨率概念。 这种简单但新颖的光学器件不仅预期能够清除弯曲掩模投影光刻的几个障碍，而且还可以发现在其中准直或会聚光束必须行进额外路径而没有显着像差的其他应用场合。
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98.发明授权公开(公告)号：US07154585B2
公开(公告)日：2006-12-26
申请号：US10611966
申请日：2003-07-03
CPC分类号： G03F7/703 , G02B13/146 , G03F7/70241
摘要： Provided is a projection optical system for forming an image of a pattern of a first object (R) on a second object (W). The projection optical system is made of an optical material having a refractive index of not more than 1.6 and is substantially telecentric both on the first object side and on the second object side. The projection optical system satisfies the condition of (λ×L)/(NA×Y02)
摘要翻译： 提供了一种用于在第二物体（W）上形成第一物体（R）的图案的图像的投影光学系统。 投影光学系统由折射率不大于1.6的光学材料制成，并且在第一物体侧和第二物体侧均基本上是远心的。 投影光学系统满足条件（lambdaxL）/（NAxY＆lt; 0＆lt; 2＆gt; 2＆lt; 2＆lt; 2＆lt; 2＆lt; 2＆lt; 2＆lt; 2＆lt; 光，L是第一物体和第二物体之间的距离，MA是第二物体侧上的数值孔径，Y 0是第二物体上的最大像高。
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公开(公告)号：US07060519B2
公开(公告)日：2006-06-13
申请号：US10756347
申请日：2004-01-14
申请人： Masamitsu Itoh
发明人： Masamitsu Itoh
IPC分类号： H01L21/00
CPC分类号： G03F7/707 , G03F1/60 , G03F7/703 , G03F7/70433 , G03F7/70783 , Y10S438/975
摘要： There is disclosed a manufacturing method for exposure mask, which comprises acquiring a first information showing surface shape of surface of each of a plurality of mask substrates, and a second information showing the flatness of the surface of each of mask substrates before and after chucked on a mask stage of an exposure apparatus, forming a corresponding relation of each mask substrate, the first information and the second information, selecting the second information showing a desired flatness among the second information of the corresponding relation, and preparing another mask substrate having the same surface shape as the surface shape indicated by the first information in the corresponding relation with the selected second information, and forming a desired pattern on the above-mentioned another mask substrate.
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公开(公告)号：US20060051679A1
公开(公告)日：2006-03-09
申请号：US10528946
申请日：2003-09-26
申请人： Antonius Nellissen
发明人： Antonius Nellissen
CPC分类号： G03F1/00 , G03F7/201 , G03F7/703 , G03F7/7035 , Y10T428/24802
摘要： In a lithographic proximity method for wiring an end or internal side surface of a substrate the required exposure of strips (76), defining the wiring pattern, is performed by means of a mask (70) comprising a diffraction structure (74) to deflect exposure radiation (b) to the side surface. An exposure beam, which is perpendicularly incident on the mask, is used so that enhanced tolerance for proximity gap width variations is obtained. The method allows manufacture of accurate and fine wiring.
摘要翻译： 在用于布线基板的端侧或内侧表面的光刻接近方法中，通过包括衍射结构（74）的掩模（70）来执行限定布线图案的条（76）的所需曝光以偏转曝光 辐射（b）到侧面。 使用垂直入射到掩模上的曝光光束，从而获得增强的接近间隙宽度变化的公差。 该方法允许制造精确和精细的接线。
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