公开(公告)号：US07406066B2

公开(公告)日：2008-07-29

申请号：US10684150

申请日：2003-10-09

Applicant: Yi Zheng ,  Aiping Yao

Inventor： Yi Zheng ,  Aiping Yao

IPC: H04B7/216

CPC classification number: H04J13/00 ,  H04B1/70718 ,  H04J13/0022 ,  H04J13/16

Abstract: The present invention of the modulation and demondulation removes the carry synchronization requirement for spread spectrum systems and code-division multiple access communication systems. The invention uses the PN codes that are specially selected and asynchronous demodulation procedure. If number of transmitters is limited, the Multiple Access Interference (MAI) due to carry differences of transmitters can be completely cancelled. Using this invention, signal from a desired transmitter can be demodulated and detected from received signals included from other transmitters in multiple access applications, even when the frequencies of transmitters are different from each other and are not synchronized with a receiver. The invention greatly reduces complexities of a wireless system where Code Division Multiple Access (CDMA) or spread spectrum is used. It expands applications of wireless communication. One of the applications is for a CDMA communication for multiple users without a centralized base station.

Abstract translation: 调制和解调的本发明消除了扩频系统和码分多址通信系统的进位同步要求。 本发明使用特殊选择的PN码和异步解调程序。 如果发射机数量有限，则由于发射机的差异导致的多址干扰（MAI）可以被完全取消。 使用本发明，即使当发射机的频率彼此不同并且与接收机不同步时，来自所需发射机的信号可以从在多个接入应用中的其他发射机所包含的接收信号中进行解调和检测。 本发明大大降低了使用码分多址（CDMA）或扩频的无线系统的复杂性。 它扩展了无线通信的应用。 其中一个应用是用于没有集中式基站的多个用户的CDMA通信。

公开(公告)号：US20080113090A1

公开(公告)日：2008-05-15

申请号：US11595765

申请日：2006-11-10

Applicant: Hieu Lam ,  Patrick Rush Webb ,  Yi Zheng

Inventor： Hieu Lam ,  Patrick Rush Webb ,  Yi Zheng

IPC: B05D5/12

CPC classification number: G11B5/1278 ,  G11B5/3116 ,  G11B5/314 ,  G11B5/3163 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: Methods and structures for the fabrication of wrap around and trailing shield structures are disclosed. Seed layers having anti-reflective properties are utilized, eliminating the need to deposit, then remove, traditional inorganic anti-reflection coatings prior to shield plating.

Abstract translation: 公开了用于制造包裹和后挡板结构的方法和结构。 利用具有抗反射性能的种子层，消除了在屏蔽电镀之前沉积，然后去除传统的无机抗反射涂层的需要。

公开(公告)号：US20070026537A1

公开(公告)日：2007-02-01

申请号：US11184364

申请日：2005-07-18

Applicant: Ming Jiang ,  Sue Zhang ,  Yi Zheng

Inventor： Ming Jiang ,  Sue Zhang ,  Yi Zheng

IPC: G11B5/33 ,  H01L21/00

CPC classification number: G11B5/3163 ,  G11B5/1278

Abstract: A method using a CMP resistant hardmask in a process of fabricating a pole piece for a magnetic head is described. A set of layers used as the mask for milling the pole piece preferably includes a CMP resistant hardmask of silicon dioxide, a resist hardmask, an upper hardmask and a photoresist mask respectively. A multi-step reactive-ion etching (RIE) process is preferably used to sequentially remove the excess materials in the layer stack to ultimately define the multilayer mask for the pole piece. The excess pole piece material is then milled away. The wafer is then refilled with a nonmagnetic material such as alumina. A CMP liftoff is used to remove the resist hardmask. The material for the CMP resistant hardmask is selected to have a high resistance to the CMP liftoff process in comparison to the refill material. The CMP resistant hardmask is preferably then removed by a RIE process.

Abstract translation: 描述了在制造用于磁头的极片的工艺中使用CMP耐磨硬掩模的方法。 作为用于研磨极片的掩模的一组层优选分别包括二氧化硅的CMP耐磨硬掩模，抗蚀剂硬掩模，上硬掩模和光致抗蚀剂掩模。 优选使用多步反应离子蚀刻（RIE）工艺来顺序地去除层叠中的多余材料以最终限定极片的多层掩模。 然后将多余的极片材料磨掉。 然后用非磁性材料如氧化铝再填充晶片。 CMP剥离用于去除抗蚀剂硬掩模。 选择用于CMP耐磨硬掩模的材料以与补充材料相比具有对CMP剥离工艺的高抗性。 然后优选通过RIE工艺去除CMP耐磨硬掩模。

公开(公告)号：US20070020386A1

公开(公告)日：2007-01-25

申请号：US11186166

申请日：2005-07-20

Applicant: Daniel Bedell ,  John Lam ,  Matthew Last ,  Kim Lee ,  Jyh-Shuey Lo ,  Dennis McKean ,  Chun-Ming (Albert) Wang ,  Yi Zheng

Inventor： Daniel Bedell ,  John Lam ,  Matthew Last ,  Kim Lee ,  Jyh-Shuey Lo ,  Dennis McKean ,  Chun-Ming (Albert) Wang ,  Yi Zheng

IPC: B05D5/12 ,  B05D5/00 ,  B05D1/36 ,  B05C11/02

CPC classification number: G03F7/40 ,  C25D5/022 ,  C25D7/12 ,  G03F7/2024

Abstract: Systems and methods for encapsulation of chemically amplified resist template for low pH electroplating are disclosed. In a first method embodiment, a resist template structure is formed on a wafer. Substantially all surfaces of the resist template structure are encapsulated to form an encapsulated structure. Magnetic materials are plated onto the encapsulated structure.

Abstract translation: 公开了用于封装用于低pH电镀的化学放大抗蚀剂模板的系统和方法。 在第一方法实施例中，在晶片上形成抗蚀剂模板结构。 基本上将抗蚀剂模板结构的所有表面封装形成封装结构。 将磁性材料电镀在封装结构上。

公开(公告)号：US07151053B2

公开(公告)日：2006-12-19

申请号：US11118678

申请日：2005-04-28

Applicant: Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas D. Nemani ,  Kangsub Yim ,  Farhad K. Moghadam ,  Ashok K. Sinha ,  Yi Zheng

Inventor： Ju-Hyung Lee ,  Ping Xu ,  Shankar Venkataraman ,  Li-Qun Xia ,  Fei Han ,  Ellie Yieh ,  Srinivas D. Nemani ,  Kangsub Yim ,  Farhad K. Moghadam ,  Ashok K. Sinha ,  Yi Zheng

IPC: H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/76834 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

Abstract: Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.

Abstract translation: 提供了用于沉积氧掺杂介电层的方法。 氧掺杂介电层可用于阻挡层或硬掩模。 在一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，将包含含氧有机硅化合物，二氧化碳或其组合的处理气体和无氧有机硅化合物引入到处理 并且使所述处理气体反应以在所述衬底上沉积掺杂氧的电介质材料，其中所述介电材料的氧含量为约15原子％或更低。 氧掺杂的电介质材料可以用作镶嵌或双镶嵌应用中的阻挡层。

公开(公告)号：US20060246518A1

公开(公告)日：2006-11-02

申请号：US11116928

申请日：2005-04-27

Applicant: Jian Chen ,  Holger Keim ,  Hshiou-ting Liu ,  Yi Zheng ,  Yali Yang ,  Cathy Worley

Inventor： Jian Chen ,  Holger Keim ,  Hshiou-ting Liu ,  Yi Zheng ,  Yali Yang ,  Cathy Worley

IPC: G01N33/53 ,  C07K16/18 ,  C07K14/47 ,  C07D491/14

CPC classification number: C07K16/44 ,  A61K47/61 ,  A61K47/643 ,  A61K47/646 ,  A61K47/6923 ,  C07D498/18 ,  C07D519/00 ,  G01N33/9493 ,  Y10S436/815 ,  Y10S530/807 ,  Y10T436/13

Abstract: Compounds are disclosed comprising a moiety, such as a poly(amino acid), a non-poly(amino acid) label moiety, or a non-poly(amino acid) immunogenic carrier, linked to a sirolimus compound at position 26 or at position 32. Such sirolimus compounds comprising an immunogenic carrier can be employed to raise both polyclonal and monoclonal antibodies to the sirolimus compound. Polyclonal antibodies are also disclosed, which are raised against a compound wherein a moiety, such as a poly(amino acid), a non-poly(amino acid) label moiety, or a non-poly(amino acid) immunogenic carrier, is linked to a sirolimus compound at position 32. The above antibodies and sirolimus compounds comprising a label can be used in assays for the detection of sirolimus compounds.

Abstract translation: 公开了包含部分，例如聚（氨基酸），非聚（氨基酸）标记部分或非聚（氨基酸）免疫原性载体的部分，其连接于位置26或位置的西罗莫司化合物 包含免疫原性载体的这种西罗莫司化合物可用于提高西罗莫司化合物的多克隆和单克隆抗体。 还公开了多克隆抗体，其针对其中部分例如聚（氨基酸），非聚（氨基酸）标记部分或非聚（氨基酸）免疫原性载体连接的化合物产生 至32位的西罗莫司化合物。包含标记的上述抗体和西罗莫司化合物可用于检测西罗莫司化合物。

公开(公告)号：US07089651B2

公开(公告)日：2006-08-15

申请号：US09971277

申请日：2001-10-05

Applicant: Yi Zheng ,  Yi-Chun Liu

Inventor： Yi Zheng ,  Yi-Chun Liu

IPC: G11B5/17 ,  G03F7/00

CPC classification number: G11B5/313 ,  G11B5/17 ,  G11B5/3116 ,  G11B5/3163 ,  Y10T29/49034 ,  Y10T29/4906 ,  Y10T29/49062 ,  Y10T29/49064 ,  Y10T29/49073

Abstract: A method for forming at least two layers of electrical coils and their supportive resistive layers for a magnetic write head having an ultra-short yoke so that the second and any additional coil layers are formed on flat resistive surfaces to eliminate problems associated with inter- and intra-layer shorting and with shorting between coil and yoke. The resistive layers are formed with flat surfaces and desired apex angles by using a novel two-step photoresist scheme in which a layer of photoresist is first photoexposed and developed, then photoexposed a second time to cure a surface region that will remain flat during a final low temperature curing process.

Abstract translation: 一种用于形成具有超短磁轭的磁写头的至少两层电线圈及其支撑电阻层的方法，使得第二和任何附加线圈层形成在平坦电阻表面上，以消除与中间和/ 层间短路和线圈与轭之间短路。 电阻层通过使用新型的两步光致抗蚀剂方案形成具有平坦表面和期望的顶角，其中光致抗蚀剂层首先被光曝光和显影，然后再次光照曝光以固化在最终的期间保持平坦的表面区域 低温固化工艺。

公开(公告)号：US07060330B2

公开(公告)日：2006-06-13

申请号：US10302393

申请日：2002-11-22

Applicant: Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric Hollar ,  Kang Sub Yim

Inventor： Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric Hollar ,  Kang Sub Yim

IPC: C23C16/56

CPC classification number: C23C16/401 ,  B05D1/60 ,  B05D3/068 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/7681

Abstract: The present invention generally provides a method for depositing a low dielectric constant film using an e-beam treatment. In one aspect, the method includes delivering a gas mixture comprising one or more organosilicon compounds and one or more hydrocarbon compounds having at least one cyclic group to a substrate surface at deposition conditions sufficient to deposit a non-cured film comprising the at least one cyclic group on the substrate surface. The method further includes substantially removing the at least one cyclic group from the non-cured film using an electron beam at curing conditions sufficient to provide a dielectric constant less than 2.5 and a hardness greater than 0.5 GPa.

Abstract translation: 本发明通常提供使用电子束处理沉积低介电常数膜的方法。 在一个方面，该方法包括在足以沉积包含至少一个环状基团的非固化膜的沉积条件下将包含一种或多种有机硅化合物和一种或多种具有至少一个环状基团的烃化合物的气体混合物递送到基底表面 组在基板表面上。 该方法还包括在足以提供小于2.5的介电常数和大于0.5GPa的硬度的固化条件下使用电子束从非固化膜中基本上除去至少一个环状基团。

公开(公告)号：US07056560B2

公开(公告)日：2006-06-06

申请号：US10773060

申请日：2004-02-04

Applicant: Kang Sub Yim ,  Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric P. Hollar

Inventor： Kang Sub Yim ,  Yi Zheng ,  Srinivas D. Nemani ,  Li-Qun Xia ,  Eric P. Hollar

IPC: C23C16/56 ,  C23C16/48 ,  C23C16/42 ,  C23C16/40 ,  H01L21/473

CPC classification number: C23C16/401 ,  B05D1/60 ,  B05D3/068 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/31058 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3125 ,  H01L21/3148 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76825

Abstract: A method for depositing a low dielectric constant film is provided by reacting a gas mixture including one or more linear, oxygen-free organosilicon compounds, one or more oxygen-free hydrocarbon compounds comprising one ring and one or two carbon-carbon double bonds in the ring, and one or more oxidizing gases. Optionally, the low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment.

Abstract translation: 一种沉积低介电常数膜的方法是通过使含有一种或多种线性无氧有机硅化合物的气体混合物，一种或多种包含一个环和一个或两个碳 - 碳双键的无氧烃化合物反应在 环和一种或多种氧化性气体。 任选地，低介电常数膜在沉积后进行后处理。 一方面，后处理是电子束处理。

公开(公告)号：US07011890B2

公开(公告)日：2006-03-14

申请号：US10378783

申请日：2003-03-03

Applicant: Son Van Nguyen ,  Yi Zheng

Inventor： Son Van Nguyen ,  Yi Zheng

IPC: B32B25/20 ,  B05D3/06

CPC classification number: H01L21/02126 ,  C23C16/401 ,  C23C16/515 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02351 ,  H01L21/3122 ,  H01L21/31633 ,  Y10T428/31663

Abstract: A method for depositing a low dielectric constant film is provided. The low dielectric constant film includes alternating sublayers, which include at least one carbon-doped silicon oxide sublayer. The sublayers are deposited by a plasma process than includes pulses of RF power. The alternating sublayers are deposited from two or more compounds that include at least one organosilicon compound. The two or more compounds and processing conditions are selected such that adjacent sublayers have different and improved mechanical properties.

Abstract translation: 提供了一种沉积低介电常数膜的方法。 低介电常数膜包括交替的亚层，其包括至少一个碳掺杂的氧化硅子层。 子层通过等离子体处理而不是包括RF功率的脉冲进行沉积。 交替的亚层由两种或更多种包含至少一种有机硅化合物的化合物沉积。 选择两种或更多种化合物和加工条件使得相邻的亚层具有不同的和改进的机械性能。