公开(公告)号：US09627037B2

公开(公告)日：2017-04-18

申请号：US14978904

申请日：2015-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung Kim ,  Sang Yeop Baeck ,  Jae Young Kim ,  Jin Sung Kim

IPC: G11C11/413 ,  G11C11/417 ,  G11C7/12 ,  H01L23/528 ,  H01L27/088 ,  H01L27/02 ,  H01L27/092 ,  G11C5/06 ,  G11C7/06 ,  G11C5/14 ,  H01L27/11

CPC classification number: G11C11/413 ,  G11C5/063 ,  G11C5/14 ,  G11C7/065 ,  G11C7/12 ,  G11C8/10 ,  G11C11/417 ,  H01L23/5286 ,  H01L27/0207 ,  H01L27/088 ,  H01L27/092 ,  H01L27/1104 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device for reducing an instantaneous voltage drop is provided. The semiconductor device includes a first power line configured to provide a first power supply voltage and a first power transistor connected between the first power line and a first logic transistor. The first power transistor includes a first source or drain connected to the first power line, a gate receiving a power gating control signal, and a second source or drain connected to a first source or drain of the first logic transistor using a shared semiconductor junction.