Light fixture wireless access points
    93.
    发明授权
    Light fixture wireless access points 有权
    灯具无线接入点

    公开(公告)号:US07162258B2

    公开(公告)日:2007-01-09

    申请号:US10758504

    申请日:2004-01-15

    CPC classification number: H05B37/0272

    Abstract: An access point for a wireless local area data communications network is designed to derive power from a lighting fixture. In one arrangement, the access point includes a housing configured to be received in one or more sockets of a lighting fixture and to replace a lamp which would be inserted therein. In another arrangement, the housing includes a socket for receiving a lamp whereby both the access point and a lighting fixture can be serviced by the socket of the lighting fixture.

    Abstract translation: 用于无线局域数据通信网络的接入点被设计成从照明灯具获得功率。 在一种布置中,接入点包括被配置为容纳在照明器具的一个或多个插座中并且替换将插入其中的灯的壳体。 在另一种布置中,壳体包括用于接收灯的插座,由此接入点和照明器具可以由照明器具的插座来维修。

    Structure and method for III-nitride monolithic power IC

    公开(公告)号:US07135753B2

    公开(公告)日:2006-11-14

    申请号:US11004186

    申请日:2004-12-03

    Abstract: III-nitride materials are used to form isolation structures in high voltage ICs to isolate low voltage and high voltage functions on a monolithic power IC. Critical performance parameters are improved using III-nitride materials, due to the improved breakdown performance and thermal performance available in III-nitride semiconductor materials. An isolation structure may include a dielectric layer that is epitaxially grown using a III-nitride material to provide a simplified manufacturing process. The process permits the use of planar manufacturing technology to avoid additional manufacturing costs. High voltage power ICs have improved performance in a smaller package in comparison to corresponding silicon structures.

    Enhancement mode III-nitride FET
    99.
    发明申请

    公开(公告)号:US20060060871A1

    公开(公告)日:2006-03-23

    申请号:US11040657

    申请日:2005-01-21

    Applicant: Robert Beach

    Inventor: Robert Beach

    Abstract: A III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device. By providing a recessed gate contact, a conduction channel formed at the interface of two III-nitride materials is interrupted when the gate electrode is inactive to prevent current flow in the device. The gate electrode can be a schottky contact or an insulated metal contact. Two gate electrodes can be provided to form a bi-directional switch with nominally off characteristics. The recesses formed with the gate electrode can have sloped sides. The gate electrodes can be formed in a number of geometries in conjunction with current carrying electrodes of the device.

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