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176 条记录 (耗时 0.038 秒)

    MEMS resonator array structure and method of operating and using same
    91.
    发明申请
    MEMS resonator array structure and method of operating and using same 有权
    MEMS谐振器阵列结构及其操作和使用方法

    公开(公告)号：US20090153258A1

    公开(公告)日：2009-06-18

    申请号：US12002894

    申请日：2007-12-18

    申请人： Markus Lutz ,  Zhiyu Pan ,  Aaron Partridge

    发明人： Markus Lutz ,  Zhiyu Pan ,  Aaron Partridge

    IPC分类号： H03B5/30

    CPC分类号： H03B5/30 ,  H03H9/02259 ,  H03H9/02338 ,  H03H9/2405 ,  H03H9/2447 ,  H03H9/505 ,  H03H2009/0233 ,  H03H2009/02385 ,  H03H2009/0244 ,  H03H2009/02503

    摘要： Each one of resonators arranged in an N×M MEMS array structure includes substantially straight elongated beam sections connected by curved/rounded sections and is mechanically coupled to at least one adjacent resonator of the array via a coupling section, each elongated beam section connected to another elongated beam section at a distal end via the curved/rounded sections forming a geometric shape (e.g., a rounded square), and the coupling sections disposed between elongated beam sections of adjacent resonators. The resonators, when induced, oscillate at substantially the same frequency, in combined elongating/breathing and bending modes, i.e., beam sections exhibiting elongating/breathing-like and bending-like motions. One or more of the array structure's resonators may include one or more nodal points (i.e., that are substantially stationary and/or experience little movement), which are suitable and/or preferable locations to anchor the resonator/array to the substrate, in one or more areas of the structure's curved sections.

    摘要翻译： 以NxM MEMS阵列结构排列的每个谐振器包括通过弯曲/圆形部分连接的基本上直的细长梁部分，并且经由耦合部分机械耦合到阵列的至少一个相邻谐振器，每个细长梁部分连接到另一个细长梁 通过形成几何形状（例如，圆形正方形）的弯曲/圆形部分的远端处的截面，以及设置在相邻谐振器的细长梁部分之间的耦合部分。 谐振器在被诱导时以组合的延长/呼吸和弯曲模式即基本上相同的频率振荡，即表现出延长/呼吸状和弯曲状运动的梁部分。 一个或多个阵列结构的谐振器可以包括一个或多个节点（即，基本上静止和/或经历少量运动），这些点是合适的和/或优选的将谐振器/阵列锚定到衬底的位置，一个 或更多的结构的弯曲部分的区域。

    MEMS resonator array structure and method of operating and using same
    92.
    发明申请
    MEMS resonator array structure and method of operating and using same 有权
    MEMS谐振器阵列结构及其操作和使用方法

    公开(公告)号：US20080218295A1

    公开(公告)日：2008-09-11

    申请号：US11809894

    申请日：2007-06-01

    申请人： Markus Lutz ,  Aaron Partridge ,  Zhiyu Pan

    发明人： Markus Lutz ,  Aaron Partridge ,  Zhiyu Pan

    IPC分类号： H03H9/46

    CPC分类号： H03H9/2405 ,  H03H3/0076 ,  H03H9/02338 ,  H03H9/02448 ,  H03H9/2431 ,  H03H9/462 ,  H03H9/505 ,  H03H2009/02354 ,  H03H2009/0244 ,  H03H2009/02496 ,  H03H2009/02503 ,  H03H2009/02511 ,  H03H2009/02527

    摘要： A plurality of mechanically coupled MEMS resonators that are arranged in an N x M MEMS array structure. Each MEMS resonators includes a plurality of straight (or substantially straight) elongated beam sections that are connected by curved/rounded sections. Each elongated beam section is connected to another elongated beam section at a distal end via the curved/rounded sections thereby forming a geometric shape (e.g., a rounded square). Further, each resonator is mechanically coupled to at least one other adjacent resonator of the array via a resonator coupling section. The resonator coupling sections may be disposed between elongated beam sections of adjacent resonators. The resonators, when induced, oscillate at the same or substantially the same frequency. The resonators oscillate in a combined elongating (or breathing) mode and bending mode; that is, the beam sections exhibit an elongating-like (or breathing-like) motion and a bending-like motion. The one or more of the resonators of the array structure may include one or more nodal points or areas (i.e., portions of the resonator that are stationary, experience little movement, and/or are substantially stationary during oscillation of the resonator/array) in one or more portions or areas of the curved sections of the structure. The nodal points are suitable and/or preferable locations to anchor the resonator/array to the substrate.

    摘要翻译： 以N×M MEMS阵列结构排列的多个机械耦合的MEMS谐振器。 每个MEMS谐振器包括通过弯曲/圆形部分连接的多个直的（或基本上直的）细长的梁部分。 每个细长梁部分经由弯曲/圆形部分在远端连接到另一个细长梁部分，从而形成几何形状（例如，圆形方形）。 此外，每个谐振器经由谐振器耦合部分机械耦合到阵列的至少一个其它相邻的谐振器。 谐振器耦合部分可以设置在相邻谐振器的细长波束部分之间。 谐振器在感应时以相同或基本相同的频率振荡。 谐振器以组合延长（或呼吸）模式和弯曲模式振荡; 也就是说，梁段呈现伸长状（或呼吸状）运动和弯曲状运动。 阵列结构的一个或多个谐振器可以包括一个或多个节点或区域（即谐振器的静止的部分，在谐振器/阵列的振荡期间经历少量运动和/或基本上静止） 结构的弯曲部分的一个或多个部分或区域。 节点是合适的和/或优选的位置以将谐振器/阵列锚固到基底。

    Temperature controlled MEMS resonator and method for controlling resonator frequency
    93.
    发明申请
    Temperature controlled MEMS resonator and method for controlling resonator frequency 有权
    温度控制MEMS谐振器和谐振器频率控制方法

    公开(公告)号：US20070296527A1

    公开(公告)日：2007-12-27

    申请号：US11895502

    申请日：2007-08-23

    申请人： Markus Lutz ,  Aaron Partridge

    发明人： Markus Lutz ,  Aaron Partridge

    IPC分类号： H03H9/02

    CPC分类号： H03H9/2463 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/01019 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H03H9/02338 ,  H03H9/02401 ,  H03H9/02448 ,  H03H9/2426 ,  H03H9/2473 ,  H03H9/2478 ,  H03H2009/02496 ,  H03H2009/02511 ,  H03H2009/02527 ,  H01L2924/00014

    摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a temperature compensated microelectromechanical resonator as well as fabricating, manufacturing, providing and/or controlling microelectromechanical resonators having mechanical structures that include integrated heating and/or temperature sensing elements. In another aspect, the present invention is directed to fabricate, manufacture, provide and/or control microelectromechanical resonators having mechanical structures that are encapsulated using thin film or wafer level encapsulation techniques in a chamber, and including heating and/or temperature sensing elements disposed in the chamber, on the chamber and/or integrated within the mechanical structures. Other aspects of the inventions will be apparent from the detailed description and claims herein.

    摘要翻译： 这里描述和说明了许多发明。 一方面，本发明涉及一种温度补偿微机电谐振器，以及制造，制造，提供和/或控制具有包括集成的加热和/或温度感测元件的机械结构的微机电谐振器。 在另一方面，本发明涉及制造，制造，提供和/或控制具有机械结构的微机电谐振器，其机械结构使用薄膜或晶片级封装技术在腔室中进行封装，并且包括设置在腔室中的加热和/或温度感测元件 室，在室上和/或整合在机械结构内。 本发明的其它方面将从本文的详细描述和权利要求中变得显而易见。

    Method for release of surface micromachined structures in an epitaxial reactor
    95.
    发明申请
    Method for release of surface micromachined structures in an epitaxial reactor 有权
    在外延反应器中释放表面微加工结构的方法

    公开(公告)号：US20070178703A1

    公开(公告)日：2007-08-02

    申请号：US11155035

    申请日：2005-06-16

    申请人： Aaron Partridge ,  Markus Lutz

    发明人： Aaron Partridge ,  Markus Lutz

    IPC分类号： H01L21/461 ,  H01L29/84

    CPC分类号： B81C1/00476

    摘要： A method for releasing from underlying substrate material micromachined structures or devices without application of chemically aggressive substances or excessive forces. The method starts with the step of providing a partially formed device, comprising a substrate layer, a sacrificial layer deposited on the substrate, and a function layer deposited on the sacrificial layer and possibly exposed portions of the substrate layer and then etched to define micromechanical structures or devices therein. The etching process exposes the sacrificial layer underlying the removed function layer material. Next there are the steps of cleaning residues from the surface of the device, and then directing high-temperature hydrogen gas over the exposed surfaces of the sacrificial layer to convert the silicon dioxide to a gas, which is carried away from the device by the hydrogen gas. The release process is complete when all of the silicon dioxide sacrificial layer material underlying the micromachined structures or devices is removed.

    摘要翻译： 用于从基底材料释放微加工结构或器件而不施加化学腐蚀性物质或过度的力的方法。 该方法从提供部分形成的器件的步骤开始，该器件包括衬底层，沉积在衬底上的牺牲层和沉积在牺牲层上的功能层以及可能的衬底层的暴露部分，然后蚀刻以限定微机械结构 或其中的装置。 蚀刻工艺暴露了去除的功能层材料下面的牺牲层。 接下来，将从器件表面清除残留物，然后将高温氢气引导到牺牲层的暴露表面上，以将二氧化硅转化为气体，从气体中排出装置 加油站。 当除去微加工结构或器件下面的所有二氧化硅牺牲层材料时，释放过程完成。

    Microelectromechanical resonator structure, and method of designing, operating and using same
    98.
    发明授权
    Microelectromechanical resonator structure, and method of designing, operating and using same 有权

    公开(公告)号：US07205867B2

    公开(公告)日：2007-04-17

    申请号：US11132941

    申请日：2005-05-19

    申请人： Markus Lutz ,  Aaron Partridge

    发明人： Markus Lutz ,  Aaron Partridge

    IPC分类号： H03H9/46

    CPC分类号： H03H9/2431 ,  H03H9/02259 ,  H03H9/02338 ,  H03H9/02448 ,  H03H9/2405 ,  H03H2009/02354 ,  H03H2009/02496 ,  H03H2009/02503 ,  H03H2009/02511 ,  H03H2009/02527

    摘要： A micromechanical resonator structure including a plurality of straight or substantially straight beam sections that are connected by curved or rounded sections. Each elongated beam section is connected to another elongated beam section at a distal end via the curved or rounded sections thereby forming a geometric shape having at least two elongated beam sections that are interconnected via curved or rounded sections (for example, a rounded triangle shape, rounded square or rectangle shape). The structure includes one or more nodal points or areas (i.e., portions of the resonator structure that are stationary, experience little movement, and/or are substantially stationary during oscillation of the resonator structure) in one or more portions or areas of the curved sections of the structure. The nodal points are suitable and/or preferable locations to anchor the resonator structure to the substrate. In operation, the resonator structure oscillates in a combined elongating (or breathing) mode and bending mode; that is, the beam sections (which oscillate or vibrate at the same frequency) exhibit an elongating-like (or breathing-like) motion and a bending-like motion.

    Integrated getter area for wafer level encapsulated microelectromechanical systems
    100.
    发明申请
    Integrated getter area for wafer level encapsulated microelectromechanical systems 有权

    公开(公告)号：US20060258039A1

    公开(公告)日：2006-11-16

    申请号：US11484431

    申请日：2006-07-11

    申请人： Markus Lutz ,  Aaron Patridge

    发明人： Markus Lutz ,  Aaron Patridge

    IPC分类号： H01L21/00

    CPC分类号： B81B7/0038 ,  B81C1/00269 ,  B81C1/00285 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： There are many inventions described and illustrated herein. In one aspect, present invention is directed to a thin film encapsulated MEMS, and technique of fabricating or manufacturing a thin film encapsulated MEMS including an integrated getter area and/or an increased chamber volume, which causes little to no increase in overall dimension(s) from the perspective of the mechanical structure and chamber. The integrated getter area is disposed within the chamber and is capable of (i) “capturing” impurities, atoms and/or molecules that are out-gassed from surrounding materials and/or (ii) reducing and/or minimizing the adverse impact of such impurities, atoms and/or molecules (for example, reducing the probability of adding mass to a resonator which would thereby change the resonator's frequency). In this way, the thin film wafer level packaged MEMS of the present invention includes a relatively stable, controlled pressure environment within the chamber to provide, for example, a more stable predetermined, desired and/or selected mechanical damping of the mechanical structure.