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    Profile engineered thin film devices and structures
    92.
    发明授权
    Profile engineered thin film devices and structures 有权
    型材设计薄膜器件和结构

    公开(公告)号：US08822301B2

    公开(公告)日：2014-09-02

    申请号：US13791721

    申请日：2013-03-08

    Applicant: Arvind Kamath ,  Erik Scher ,  Patrick Smith ,  Aditi Chandra ,  Steven Molesa

    Inventor： Arvind Kamath ,  Erik Scher ,  Patrick Smith ,  Aditi Chandra ,  Steven Molesa

    IPC: H01L21/20

    CPC classification number: H01L21/36 ,  C23C18/08 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/1295 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/28273 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/76871 ,  H01L21/76895 ,  H01L27/1285 ,  H01L27/1292 ,  H01L28/40 ,  H01L29/0657 ,  H01L29/66143 ,  H01L29/6675 ,  H01L29/7881 ,  H01L29/872 ,  H05K1/16 ,  H05K1/162 ,  H05K3/125 ,  H05K2201/098

    Abstract: The present invention relates to electrically active devices (e.g., capacitors, transistors, diodes, floating gate memory cells, etc.) having dielectric, conductor, and/or semiconductor layers with smooth and/or dome-shaped profiles and methods of forming such devices by depositing or printing (e.g., inkjet printing) an ink composition that includes a semiconductor, metal, or dielectric precursor. The smooth and/or dome-shaped cross-sectional profile allows for smooth topological transitions without sharp steps, preventing feature discontinuities during deposition and allowing for more complete step coverage of subsequently deposited structures. The inventive profile allows for both the uniform growth of oxide layers by thermal oxidation, and substantially uniform etching rates of the structures. Such oxide layers may have a uniform thickness and provide substantially complete coverage of the underlying electrically active feature. Uniform etching allows for an efficient method of reducing a critical dimension of an electrically active structure by simple isotropic etch.

    Abstract translation: 本发明涉及具有平滑和/或圆顶形轮廓的电介质，导体和/或半导体层的电活性器件（例如，电容器，晶体管，二极管，浮动栅极存储单元等）和形成这种器件的方法 通过沉积或印刷（例如喷墨印刷）包括半导体，金属或电介质前体的油墨组合物。 平滑和/或圆顶形的横截面轮廓允许平滑的拓扑转变而没有尖锐的步骤，防止沉积期间的特征不连续性，并允许随后沉积的结构的更完整的阶梯覆盖。 本发明的轮廓允许通过热氧化均匀生长氧化物层，以及基本均匀的结构蚀刻速率。 这样的氧化物层可以具有均匀的厚度并且提供基本的电活性特征的基本上完整的覆盖。 均匀蚀刻允许通过简单的各向同性蚀刻来降低电活性结构的临界尺寸的有效方法。

    Guiding calls via graphical user interface
    93.
    发明授权
    Guiding calls via graphical user interface 有权
    通过图形用户界面引导

    公开(公告)号：US08520830B2

    公开(公告)日：2013-08-27

    申请号：US13173265

    申请日：2011-06-30

    Applicant: Amit Singh ,  Patrick Smith ,  Vijay Arumugam ,  Roopa Kotha ,  Fariborz Ebrahimi

    Inventor： Amit Singh ,  Patrick Smith ,  Vijay Arumugam ,  Roopa Kotha ,  Fariborz Ebrahimi

    IPC: H04M3/00

    CPC classification number: H04M3/5166 ,  H04M3/493 ,  H04M2203/252

    Abstract: A user device may display, via a graphical user interface, questions associated with a voice menu that is used by an interactive voice response (IVR) system to forward calls. The user device may obtain, via the graphical user interface, user responses to the questions. In addition, the user device may send information corresponding to the user responses to the questions to a remote device. The remote device may query the IVR system to identify a call agent, in a call center, whose profile matches the information, obtain contact information of the call agent from the IVR system, and send the contact information to the user device. Furthermore, the user device may receive the contact information from the remote device and display the contact information via the graphical user interface.

    Abstract translation: 用户设备可以经由图形用户界面显示与由交互式语音响应（IVR）系统用于转发呼叫的语音菜单相关联的问题。 用户设备可以经由图形用户界面获得用户对问题的响应。 此外，用户设备可以向远程设备发送与用户对问题的响应相对应的信息。 远程设备可以查询IVR系统来识别呼叫中心中的呼叫中心，其配置文件与信息匹配，从IVR系统获取呼叫代理的联系人信息，并将联系人信息发送给用户设备。 此外，用户设备可以从远程设备接收联系人信息，并经由图形用户界面显示联系人信息。

    Process-variation tolerant series-connected NMOS and PMOS diodes, and standard cells, tags, and sensors containing the same
    94.
    发明授权
    Process-variation tolerant series-connected NMOS and PMOS diodes, and standard cells, tags, and sensors containing the same 有权
    工艺变异容差串联NMOS和PMOS二极管，以及标准单元，标签和含有这些二极管的传感器

    公开(公告)号：US08471308B2

    公开(公告)日：2013-06-25

    申请号：US13047627

    申请日：2011-03-14

    Applicant: Vivek Subramanian ,  Patrick Smith

    Inventor： Vivek Subramanian ,  Patrick Smith

    IPC: H01L29/76

    CPC classification number: H01L29/86 ,  H01L27/1285 ,  H01L27/1288 ,  H01L27/1292 ,  Y10S257/91 ,  Y10T307/964

    Abstract: Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same, and applications of the same for identification tags and sensors are disclosed. A patterned structure comprising a complementary pair of diodes or diode-connected TFTs in series can stabilize the threshold voltage (Vt) of a diode manufactured using printing or laser writing techniques. The present invention advantageously utilizes the separation between the Vt of an NMOS TFT (Vtn) and the Vt of a PMOS TFT (Vtp) to establish and/or improve stability of a forward voltage drop across a printed or laser-written diode. Further applications of the present invention relate to reference voltage generators, voltage clamp circuits, methods of controlling voltages on related or differential signal transmission lines, and RFID and EAS tags and sensors.

    Abstract translation: 公开了包含这种二极管和TFT的工艺变容二极管和二极管连接的薄膜晶体管（TFT），印刷或图案化结构（例如电路），其制造方法及其用于识别标签和传感器的应用。 包括串联的互补二极管或二极管连接的TFT的图案化结构可以稳定使用印刷或激光写入技术制造的二极管的阈值电压（Vt）。 本发明有利地利用NMOS TFT（Vtn）的Vt和PMOS TFT（Vtp）的Vt之间的间隔来建立和/或提高印刷或激光写入的二极管上的正向压降的稳定性。 本发明的其它应用涉及参考电压发生器，电压钳位电路，控制相关或差分信号传输线上的电压的方法，以及RFID和EAS标签和传感器。

    Lock assembly with removable shackle
    96.
    发明授权
    Lock assembly with removable shackle 有权
    锁紧组件与可移动卸扣

    公开(公告)号：US07856855B2

    公开(公告)日：2010-12-28

    申请号：US11690241

    申请日：2007-03-23

    Applicant: Steven A. Fantl ,  Patrick Smith

    Inventor： Steven A. Fantl ,  Patrick Smith

    IPC: E05B67/22

    CPC classification number: E05B67/24 ,  E05B17/0062 ,  E05B63/0056 ,  E05B67/003 ,  E05B67/063 ,  Y10T70/454 ,  Y10T70/457 ,  Y10T70/459 ,  Y10T70/461

    Abstract: A lock assembly has a lock body and a shackle. The shackle has a leg. A locking element is disposed in the lock body. The locking element is selectively engageable to the shackle. A cam is disposed in the lock body. The cam has a lock position for moving the locking element to engage the shackle. There is also an unlocked position for moving the locking element to disengage the shackle. The cam has a shackle removal position for removing the shackle from the lock body. The leg has a shackle removal recess sized to receive the locking element sufficiently so as to permit movement of the cam to the shackle removal position. The cam is configured to displace the locking element into the shackle removal recess.

    Abstract translation: 锁组件具有锁体和钩环。 手铐有一条腿。 锁定元件设置在锁体内。 锁定元件可选择性地接合到钩环。 凸轮设置在锁体内。 凸轮具有用于移动锁定元件以接合钩环的锁定位置。 还有一个解锁位置，用于移动锁定元件以脱离钩环。 凸轮具有用于从锁体去除钩环的卸扣位置。 该腿具有一个卸扣槽，其尺寸被设计成足以容纳锁定元件，以允许凸轮移动到卸扣位置。 凸轮构造成将锁定元件移动到卸载凹槽中。

    Solid brazed laminate structures
    97.
    发明授权
    Solid brazed laminate structures 有权
    固体钎焊层压结构

    公开(公告)号：US07819304B2

    公开(公告)日：2010-10-26

    申请号：US11690213

    申请日：2007-03-23

    Applicant: Patrick Smith

    Inventor： Patrick Smith

    IPC: B23K35/12 ,  E05B67/22

    CPC classification number: B23K1/0008 ,  Y10T70/413 ,  Y10T70/459 ,  Y10T70/489

    Abstract: An example method of manufacturing a solid brazed laminate structure includes stacking a first lamina on a second lamina with an interfacial spacing between them, aligning mating portions of the first lamina and the second lamina, and introducing a braze material at least partially into the interfacial spacing to join the first lamina and the second lamina together. One example solid brazed laminate structure includes a lock assembly. Another example solid brazed structure includes a gear assembly.

    Abstract translation: 制造固体钎焊层压结构的示例性方法包括将第一层板叠置在第二层板上，其间具有界面间隔，使第一层板和第二层板的配合部分对准，并将钎焊材料至少部分地引入界面间隔 一起加入第一层和第二层。 一个实例的固体钎焊层压结构包括锁组件。 另一个实例的钎焊结构包括齿轮组件。

    Method of manufacturing complementary diodes
    98.
    发明授权
    Method of manufacturing complementary diodes 有权
    制造互补二极管的方法

    公开(公告)号：US07528017B2

    公开(公告)日：2009-05-05

    申请号：US11521924

    申请日：2006-09-15

    Applicant: Vivek Subramanian ,  Patrick Smith

    Inventor： Vivek Subramanian ,  Patrick Smith

    IPC: H01L21/20

    CPC classification number: H01L29/86 ,  H01L27/1285 ,  H01L27/1288 ,  H01L27/1292 ,  Y10S257/91 ,  Y10T307/964

    Abstract: Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same, and applications of the same for identification tags and sensors are disclosed. A patterned structure comprising a complementary pair of diodes or diode-connected TFTs in series can stabilize the threshold voltage (Vt) of a diode manufactured using printing or laser writing techniques. The present invention advantageously utilizes the separation between the Vt of an NMOS TFT (Vtn) and the Vt of a PMOS TFT (Vtp) to establish and/or improve stability of a forward voltage drop across a printed or laser-written diode. Further applications of the present invention relate to reference voltage generators, voltage clamp circuits, methods of controlling voltages on related or differential signal transmission lines, and RFID and EAS tags and sensors.

    Abstract translation: 公开了包含这种二极管和TFT的工艺变容二极管和二极管连接的薄膜晶体管（TFT），印刷或图案化结构（例如电路），其制造方法及其用于识别标签和传感器的应用。 包括串联的互补二极管或二极管连接的TFT的图案化结构可以稳定使用印刷或激光写入技术制造的二极管的阈值电压（Vt）。 本发明有利地利用NMOS TFT（Vtn）的Vt和PMOS TFT（Vtp）的Vt之间的间隔来建立和/或提高印刷或激光写入的二极管上的正向压降的稳定性。 本发明的其它应用涉及参考电压发生器，电压钳位电路，控制相关或差分信号传输线上的电压的方法，以及RFID和EAS标签和传感器。

    Transitions having disparate surfaces
    100.
    发明申请
    Transitions having disparate surfaces 失效
    具有不同表面的过渡

    公开(公告)号：US20080168729A1

    公开(公告)日：2008-07-17

    申请号：US11907965

    申请日：2007-10-18

    Applicant: Dan Brunedal ,  Patrick Smith

    Inventor： Dan Brunedal ,  Patrick Smith

    IPC: E04F19/06 ,  E04B1/68 ,  B44F9/00

    CPC classification number: E04F11/16 ,  E04F19/061 ,  E04F19/062 ,  E04F19/065 ,  F21S4/28 ,  F21V33/006 ,  F21Y2115/10

    Abstract: A structure to form flooring transitions having outer surfaces comprising two disparate materials. In a preferred embodiment the flooring transitions includes a T-shaped molding and at least one attachment thereto. The outer surfaces of the T-molding and attachment may be comprised of different materials, even though they may sometimes have the same pattern or décor. For example, the T-molding may have a surface of real wood or veneer and the attachment may have an outer surface of abrasion resistant foil, metal, or even a visual perception element, such as lights or reflective tape. A kit is also disclosed.

    Abstract translation: 一种形成具有包括两种不同材料的外表面的地板过渡的结构。 在优选实施例中，地板过渡部分包括T形模制件和至少一个附件。 T型和附件的外表面可以由不同的材料组成，尽管它们有时可以具有相同的图案或装饰。 例如，T型模具可以具有真实木材或单板的表面，并且附件可以具有耐磨箔，金属或甚至视觉感知元件（例如灯或反射带）的外表面。 还披露了一个套件。

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