Oxides with thin metallic layers as transparent ohmic contacts for p-type and n-type gallium nitride
    93.
    发明授权
    Oxides with thin metallic layers as transparent ohmic contacts for p-type and n-type gallium nitride 有权
    具有薄金属层的氧化物作为p型和n型氮化镓的透明欧姆接触

    公开(公告)号:US09306126B2

    公开(公告)日:2016-04-05

    申请号:US14330616

    申请日:2014-07-14

    摘要: Transparent conductive layers usable as ohmic contacts for III-V semiconductors with work functions between 4.1 and 4.7 eV are formed by annealing layers of transparent oxide with thin (0.1-5nm) layers of conductive metal. When the layers interdiffuse during the annealing, some of the conductive metal atoms remain free to reduce resistivity and others oxidize to reduce optical absorption. Examples of the transparent oxides include indium-tin oxide, zinc oxide, and aluminum zinc oxide with up to 5 wt % Al. Examples of the metals include aluminum and titanium. The work function of the transparent conductive layer can be tuned to match the contacted semiconductor by adjusting the ratio of metal to transparent oxide.

    摘要翻译: 通过用薄(0.1-5nm)导电金属层的透明氧化物退火层,形成可用作功函数为4.1和4.7eV的III-V半导体的欧姆接触的透明导电层。 当退火期间层间相互扩散时,一些导电金属原子保持自由以降低电阻率,而其它导电金属原子保持自由以降低电阻率,而其它导电金属原子保持自由以降低电阻率,而其它导电金属原子保持自由以降 透明氧化物的实例包括氧化铟锡,氧化锌和至多5重量%的Al的氧化锌。 金属的实例包括铝和钛。 通过调整金属与透明氧化物的比例,可以调整透明导电层的功函数以使接触的半导体匹配。

    Methods and apparatuses for patterned low emissivity panels
    94.
    发明授权
    Methods and apparatuses for patterned low emissivity panels 有权
    图案化低辐射面板的方法和装置

    公开(公告)号:US09297938B2

    公开(公告)日:2016-03-29

    申请号:US13715528

    申请日:2012-12-14

    IPC分类号: G02B5/20 F21V9/04

    CPC分类号: G02B5/208

    摘要: A method for making low emissivity panels, comprising forming a patterned layer on a transparent substrate. The patterned layers can offer different color schemes or different decorative appearance styles for the coated panels, or can offer gradable thermal efficiency through the patterned layers.

    摘要翻译: 一种制造低辐射面板的方法,包括在透明基底上形成图案层。 图案化的层可以为涂覆的面板提供不同的配色方案或不同的装饰外观样式,或者可以通过图案化层提供可分级的热效率。

    Seed layer for low-e applications
    97.
    发明申请
    Seed layer for low-e applications 有权
    种子层用于低e应用

    公开(公告)号:US20150345005A1

    公开(公告)日:2015-12-03

    申请号:US14293126

    申请日:2014-06-02

    摘要: Methods, and coated panels fabricated from the methods, are disclosed to form multiple coatings, (e.g., one or more infrared reflective layers), with minimal color change before and after heat treatments. For example, by adding appropriate seed layers between the IR reflective layers and the base oxide layers, the color performance can be maintained regardless of high temperature processes. The optical filler layers can include a metal oxide layer. In some embodiments, the seed layer can include nickel, titanium, and niobium, forming a nickel titanium niobium alloy such as NiTiNb.

    摘要翻译: 公开了由方法制造的方法和涂层板,以在热处理之前和之后形成多个涂层(例如,一个或多个红外反射层),具有最小的颜色变化。 例如,通过在IR反射层和基底氧化物层之间添加合适的种子层,可以保持颜色性能,而与高温处理无关。 光学填料层可以包括金属氧化物层。 在一些实施方案中,种子层可以包括镍,钛和铌,形成镍钛铌合金,例如NiTiNb。

    Electrochromic device with improved transparent conductor and method for forming the same
    100.
    发明授权
    Electrochromic device with improved transparent conductor and method for forming the same 有权
    具有改进的透明导体的电致变色器件及其形成方法

    公开(公告)号:US09081245B2

    公开(公告)日:2015-07-14

    申请号:US14102768

    申请日:2013-12-11

    IPC分类号: G02F1/153 G02F1/155

    CPC分类号: G02F1/155

    摘要: Embodiments provided herein describe electrochromic devices and methods for forming electrochromic devices. The electrochromic devices include a transparent substrate, a transparent conducting oxide layer coupled to the transparent substrate, and a layer of electrochromic material coupled to the transparent conducting oxide layer. The transparent conducting oxide layer includes indium and zinc.

    摘要翻译: 本文提供的实施例描述了用于形成电致变色器件的电致变色器件和方法。 电致变色器件包括透明衬底,耦合到透明衬底的透明导电氧化物层和耦合到透明导电氧化物层的电致变色材料层。 透明导电氧化物层包括铟和锌。