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    Oxides with Thin Metallic Layers as Transparent Ohmic Contacts for P-Type and N-Type Gallium Nitride
    2.
    发明申请
    Oxides with Thin Metallic Layers as Transparent Ohmic Contacts for P-Type and N-Type Gallium Nitride 有权
    具有薄金属层的氧化物作为P型和N型氮化镓的透明欧姆接触

    公开(公告)号：US20160013367A1

    公开(公告)日：2016-01-14

    申请号：US14330616

    申请日：2014-07-14

    申请人： Intermolecular, Inc.

    发明人： Jianhua Hu ,  Heng-Kai Hsu ,  Minh Huu Le ,  Sandeep Nijhawan ,  Teresa B. Sapirman

    IPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/00

    CPC分类号： H01L33/42 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/32 ,  H01L2933/0016

    摘要： Transparent conductive layers usable as ohmic contacts for III-V semiconductors with work functions between 4.1 and 4.7 eV are formed by annealing layers of transparent oxide with thin (0.1-5 nm) layers of conductive metal. When the layers interdiffuse during the annealing, some of the conductive metal atoms remain free to reduce resistivity and others oxidize to reduce optical absorption. Examples of the transparent oxides include indium-tin oxide, zinc oxide, and aluminum zinc oxide with up to 5 wt % Al. Examples of the metals include aluminum and titanium. The work function of the transparent conductive layer can be tuned to match the contacted semiconductor by adjusting the ratio of metal to transparent oxide.

    摘要翻译： 通过用薄（0.1-5nm）导电金属层的透明氧化物退火层，形成功函数为4.1和4.7eV的III-V半导体可用作欧姆接触的透明导电层。 当退火期间层间相互扩散时，一些导电金属原子保持自由以降低电阻率，而其它导电金属原子保持自由以降低电阻率，而其它导电金属原子保持自由以降低电阻率，而其它导电金属原子保持自由以降 透明氧化物的实例包括氧化铟锡，氧化锌和至多5重量％的Al的氧化锌。 金属的实例包括铝和钛。 通过调整金属与透明氧化物的比例，可以调整透明导电层的功函数以使接触的半导体匹配。

    Indium Zinc Oxide for Transparent Conductive Oxide Layer and Methods of Forming Thereof
    4.
    发明申请
    Indium Zinc Oxide for Transparent Conductive Oxide Layer and Methods of Forming Thereof 审中-公开
    用于透明导电氧化物层的氧化铟锌及其形成方法

    公开(公告)号：US20160111603A1

    公开(公告)日：2016-04-21

    申请号：US14519274

    申请日：2014-10-21

    申请人： Intermolecular, Inc. ,  Epistar Corporation

    发明人： Jianhua Hu ,  Ben Cardozo ,  Minh Huu Le ,  Sandeep Nijhawan ,  J.H. Yeh

    IPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/00

    CPC分类号： H01L33/42 ,  H01L31/1884 ,  H01L33/0095 ,  H01L33/32 ,  H01L2933/0016 ,  Y02E10/50

    摘要： Provided are light emitting diodes (LEDs) and methods of fabricating such LEDs. Specifically, an LED has an epitaxial stack and current distribution layer disposed on and interfacing the epitaxial stack. The current distribution layer includes indium oxide and zinc oxide such that the concentration of indium oxide is between about 5% and 15% by weight. During fabrication, the current distribution layer is annealed at a temperature of less than about 500° C. or even at less than about 400° C. These low anneal temperature helps preserving the overall thermal budget of the LED while still yielding a current distribution layer having a low resistivity and low adsorption. A particular composition and method of forming the current distribution layer allows using lower annealing temperatures. In some embodiments, the current distribution layer is sputtered using indium oxide and zinc oxide targets at a pressure of less than 5 mTorr.

    摘要翻译： 提供了发光二极管（LED）和制造这种LED的方法。 具体地说，LED具有外延层和电流分布层，其布置在外延层上并与外延层叠接合。 电流分布层包括氧化铟和氧化锌，使得氧化铟的浓度在约5重量％至15重量％之间。 在制造期间，电流分布层在小于约500℃或甚至低于约400℃的温度下退火。这些低退火温度有助于保持LED的总体热预算，同时仍然产生电流分布层 具有低电阻率和低吸附性。 形成电流分布层的特定组成和方法允许使用较低的退火温度。 在一些实施例中，使用氧化铟和氧化锌靶在小于5mTorr的压力下溅射电流分布层。

    Oxides with thin metallic layers as transparent ohmic contacts for p-type and n-type gallium nitride
    5.
    发明授权
    Oxides with thin metallic layers as transparent ohmic contacts for p-type and n-type gallium nitride 有权
    具有薄金属层的氧化物作为p型和n型氮化镓的透明欧姆接触

    公开(公告)号：US09306126B2

    公开(公告)日：2016-04-05

    申请号：US14330616

    申请日：2014-07-14

    申请人： Intermolecular, Inc.

    发明人： Jianhua Hu ,  Heng-Kai Hsu ,  Minh Huu Le ,  Sandeep Nijhawan ,  Teresa B. Sapirman

    IPC分类号： H01L29/15 ,  H01L33/42 ,  H01L33/00 ,  H01L33/32

    CPC分类号： H01L33/42 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/32 ,  H01L2933/0016

    摘要： Transparent conductive layers usable as ohmic contacts for III-V semiconductors with work functions between 4.1 and 4.7 eV are formed by annealing layers of transparent oxide with thin (0.1-5nm) layers of conductive metal. When the layers interdiffuse during the annealing, some of the conductive metal atoms remain free to reduce resistivity and others oxidize to reduce optical absorption. Examples of the transparent oxides include indium-tin oxide, zinc oxide, and aluminum zinc oxide with up to 5 wt % Al. Examples of the metals include aluminum and titanium. The work function of the transparent conductive layer can be tuned to match the contacted semiconductor by adjusting the ratio of metal to transparent oxide.

    摘要翻译： 通过用薄（0.1-5nm）导电金属层的透明氧化物退火层，形成可用作功函数为4.1和4.7eV的III-V半导体的欧姆接触的透明导电层。 当退火期间层间相互扩散时，一些导电金属原子保持自由以降低电阻率，而其它导电金属原子保持自由以降低电阻率，而其它导电金属原子保持自由以降低电阻率，而其它导电金属原子保持自由以降 透明氧化物的实例包括氧化铟锡，氧化锌和至多5重量％的Al的氧化锌。 金属的实例包括铝和钛。 通过调整金属与透明氧化物的比例，可以调整透明导电层的功函数以使接触的半导体匹配。

    TCOs for Heterojunction Solar Cells
    8.
    发明申请
    TCOs for Heterojunction Solar Cells 审中-公开
    异质结太阳能电池的TCO

    公开(公告)号：US20140261660A1

    公开(公告)日：2014-09-18

    申请号：US14082402

    申请日：2013-11-18

    申请人： Intermolecular, Inc.

    发明人： Jianhua Hu ,  Heng-Kai Hsu ,  Minh Huu Le ,  Sandeep Nijhawan

    IPC分类号： H01L31/0224 ,  H01L31/18

    CPC分类号： H01L31/022466 ,  H01L31/0747 ,  H01L31/1832 ,  H01L31/1884 ,  Y02E10/50

    摘要： Methods are used to develop and evaluate new materials and deposition processes for use as TCO materials in HJCS solar cells. The TCO layers allow improved control over the uniformity of the TCO conductivity and interface properties, and reduce the sensitivity to the texture of the wafer. In Some embodiments, the TCO materials include indium, zinc, tin, and aluminum.

    摘要翻译： 方法用于开发和评估用于HJCS太阳能电池中的TCO材料的新材料和沉积工艺。 TCO层允许改进对TCO电导率和界面性质的均匀性的控制，并降低对晶片纹理的敏感性。 在一些实施方案中，TCO材料包括铟，锌，锡和铝。

    Combinatorial Methods and Systems for Developing Thermochromic Materials and Devices
    9.
    发明申请
    Combinatorial Methods and Systems for Developing Thermochromic Materials and Devices 审中-公开
    用于开发热变色材料和器件的组合方法和系统

    公开(公告)号：US20140178583A1

    公开(公告)日：2014-06-26

    申请号：US13721472

    申请日：2012-12-20

    申请人： INTERMOLECULAR, INC.

    发明人： Jeroen Van Duren ,  Sang Lee ,  Sandeep Nijhawan

    IPC分类号： B05D5/00

    CPC分类号： G02F1/0147 ,  C23C14/3464 ,  C23C14/505

    摘要： Embodiments provided herein describe methods and systems for evaluating thermochromic material processing conditions. A plurality of site-isolated regions on at least one substrate are designated. A first thermochromic material is formed on a first of the plurality of site-isolated regions on the at least one substrate with a first set of processing conditions. A second thermochromic material is formed on a second of the plurality of site-isolated regions on the at least one substrate with a second set of processing conditions. The second set of processing conditions is different than the first set of processing conditions.

    摘要翻译： 本文提供的实施例描述了用于评估热变色材料加工条件的方法和系统。 指定至少一个基板上的多个位置隔离区域。 第一热变色材料在具有第一组处理条件的至少一个衬底上的多个位置隔离区域的第一个上形成。 在第二组加工条件下，在至少一个基板上的多个位置隔离区域的第二个上形成第二热变色材料。 第二组处理条件与第一组处理条件不同。