公开(公告)号：US09246062B2

公开(公告)日：2016-01-26

申请号：US14259387

申请日：2014-04-23

申请人： Intermolecular, Inc.

发明人： Jianhua Hu ,  Heng Kai Hsu ,  Tong Ju ,  Minh Huu Le ,  Sandeep Nijhawan ,  Teresa B. Sapirman

IPC分类号： H01L21/00 ,  H01L33/42 ,  H01L33/32

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/40 ,  H01L33/483 ,  H01L2933/0016

摘要： Transparent ohmic contacts to p-GaN and other high-work-function (≧4.2 eV) semiconductors are fabricated from zinc stannate (e.g., ZnSnO3). ZnO and SnO2 may be sputtered from separate targets and annealed to form the zinc stannate. The Zn:Sn ratio may be tuned over the range between 1:2 and 2:1 to optimize bandgap, work function, conductivity, and transparency for the particular semiconductor and wavelength of interest. Conductivity may be improved by crystallizing the zinc stannate, by doping with up to 5 wt % Al or In, or both.

摘要翻译： 由锡酸锡（例如ZnSnO 3）制造对p-GaN和其它高功函数（≥4.2eV）的半导体的透明欧姆接触。 ZnO和SnO2可以从单独的靶溅射并退火以形成锡酸锌。 可以在1:2和2:1之间的范围内调整Zn：Sn比，以优化特定半导体和感兴趣的波长的带隙，功函数，电导率和透明度。 可以通过使锡酸锌结晶，通过掺入高达5重量％的Al或In或两者来改善电导率。

公开(公告)号：US20150311397A1

公开(公告)日：2015-10-29

申请号：US14259387

申请日：2014-04-23

申请人： INTERMOLECULAR, INC.

发明人： Jianhua Hu ,  Heng Kai Hsu ,  Tong Ju ,  Minh Huu Le ,  Sandeep Nijhawan ,  Teresa B. Sapirman

IPC分类号： H01L33/42 ,  H01L33/32

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/40 ,  H01L33/483 ,  H01L2933/0016

摘要： Transparent ohmic contacts to p-GaN and other high-work-function (≧4.2 eV) semiconductors are fabricated from zinc stannate (e.g., ZnSnO3). ZnO and SnO2 may be sputtered from separate targets and annealed to form the zinc stannate. The Zn:Sn ratio may be tuned over the range between 1:2 and 2:1 to optimize bandgap, work function, conductivity, and transparency for the particular semiconductor and wavelength of interest. Conductivity may be improved by crystallizing the zinc stannate, by doping with up to 5 wt % Al or In, or both.

摘要翻译： 由锡酸锡（例如ZnSnO 3）制造对p-GaN和其它高功函数（≥4.2eV）的半导体的透明欧姆接触。 ZnO和SnO2可以从单独的靶溅射并退火以形成锡酸锌。 可以在1:2和2:1之间的范围内调整Zn：Sn比，以优化特定半导体和感兴趣的波长的带隙，功函数，电导率和透明度。 可以通过使锡酸锌结晶，通过掺入高达5重量％的Al或In或两者来改善电导率。

公开(公告)号：US20150091032A1

公开(公告)日：2015-04-02

申请号：US14136196

申请日：2013-12-20

申请人： Intermolecular, Inc.

发明人： Jianhua Hu ,  Minh Huu Le ,  Sandeep Nijhawan ,  Teresa B. Sapirman

IPC分类号： H01L33/46

CPC分类号： H01L33/405 ,  H01L33/0095 ,  H01L2933/0016

摘要： Diffusion of silver from LED reflector layers is blocked by 10-50 nm barrier layers of nickel-titanium (NiTi) alloys. Optionally, the alloys also include one or more of tungsten (W), niobium (Nb), aluminum (Al), vanadium (V), tantalum (Ta), or chromium (Cr). These barriers may omit the noble-metal (e.g., platinum or gold) cap used with silver barriers based on other materials.

摘要翻译： 来自LED反射层的银的扩散被镍 - 钛（NiTi）合金的10-50nm阻挡层阻挡。 任选地，合金还包括钨（W），铌（Nb），铝（Al），钒（V），钽（Ta）或铬（Cr）中的一种或多种。 这些障碍物可以省略基于其它材料与银屏障一起使用的贵金属（例如，铂或金）帽。

公开(公告)号：US20160013367A1

公开(公告)日：2016-01-14

申请号：US14330616

申请日：2014-07-14

申请人： Intermolecular, Inc.

发明人： Jianhua Hu ,  Heng-Kai Hsu ,  Minh Huu Le ,  Sandeep Nijhawan ,  Teresa B. Sapirman

IPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/42 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/32 ,  H01L2933/0016

摘要： Transparent conductive layers usable as ohmic contacts for III-V semiconductors with work functions between 4.1 and 4.7 eV are formed by annealing layers of transparent oxide with thin (0.1-5 nm) layers of conductive metal. When the layers interdiffuse during the annealing, some of the conductive metal atoms remain free to reduce resistivity and others oxidize to reduce optical absorption. Examples of the transparent oxides include indium-tin oxide, zinc oxide, and aluminum zinc oxide with up to 5 wt % Al. Examples of the metals include aluminum and titanium. The work function of the transparent conductive layer can be tuned to match the contacted semiconductor by adjusting the ratio of metal to transparent oxide.

摘要翻译： 通过用薄（0.1-5nm）导电金属层的透明氧化物退火层，形成功函数为4.1和4.7eV的III-V半导体可用作欧姆接触的透明导电层。 当退火期间层间相互扩散时，一些导电金属原子保持自由以降低电阻率，而其它导电金属原子保持自由以降低电阻率，而其它导电金属原子保持自由以降低电阻率，而其它导电金属原子保持自由以降 透明氧化物的实例包括氧化铟锡，氧化锌和至多5重量％的Al的氧化锌。 金属的实例包括铝和钛。 通过调整金属与透明氧化物的比例，可以调整透明导电层的功函数以使接触的半导体匹配。

公开(公告)号：US09112095B2

公开(公告)日：2015-08-18

申请号：US13716009

申请日：2012-12-14

申请人： Intermolecular, Inc.

发明人： Teresa B. Sapirman ,  Philip A. Kraus ,  Sang M. Lee ,  Haifan Liang ,  Jeroen Van Duren

IPC分类号： H01L21/00 ,  H01L31/18

CPC分类号： H01L31/18 ,  C23C14/3464 ,  H01L31/0749 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

摘要： In some embodiments, Cu—In—Ga precursor films are deposited by co-sputtering from multiple targets. Specifically, the co-sputtering method is used to form layers that include In. The co-sputtering reduces the tendency for the In component to agglomerate and results in smoother, more uniform films. In some embodiments, the Ga concentration in one or more target(s) is between about 25 atomic % and about 66 atomic %. The deposition may be performed in a batch or in-line deposition system. If an in-line deposition system is used, the movement of the substrates through the system may be continuous or may follow a “stop and soak” method of substrate transport.

摘要翻译： 在一些实施方案中，通过多个靶的共溅射沉积Cu-In-Ga前体膜。 具体地，共溅射法用于形成包括In的层。 共溅射减少了In组分聚集的趋势，并导致更平滑，更均匀的膜。 在一些实施方案中，一个或多个靶中的Ga浓度为约25原子％至约66原子％。 沉积可以在批次或在线沉积系统中进行。 如果使用在线沉积系统，则衬底通过系统的移动可以是连续的，或者可以遵循衬底传送的“停止和浸泡”方法。

公开(公告)号：US09306126B2

公开(公告)日：2016-04-05

申请号：US14330616

申请日：2014-07-14

申请人： Intermolecular, Inc.

发明人： Jianhua Hu ,  Heng-Kai Hsu ,  Minh Huu Le ,  Sandeep Nijhawan ,  Teresa B. Sapirman

IPC分类号： H01L29/15 ,  H01L33/42 ,  H01L33/00 ,  H01L33/32

CPC分类号： H01L33/42 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/32 ,  H01L2933/0016

摘要： Transparent conductive layers usable as ohmic contacts for III-V semiconductors with work functions between 4.1 and 4.7 eV are formed by annealing layers of transparent oxide with thin (0.1-5nm) layers of conductive metal. When the layers interdiffuse during the annealing, some of the conductive metal atoms remain free to reduce resistivity and others oxidize to reduce optical absorption. Examples of the transparent oxides include indium-tin oxide, zinc oxide, and aluminum zinc oxide with up to 5 wt % Al. Examples of the metals include aluminum and titanium. The work function of the transparent conductive layer can be tuned to match the contacted semiconductor by adjusting the ratio of metal to transparent oxide.

摘要翻译： 通过用薄（0.1-5nm）导电金属层的透明氧化物退火层，形成可用作功函数为4.1和4.7eV的III-V半导体的欧姆接触的透明导电层。 当退火期间层间相互扩散时，一些导电金属原子保持自由以降低电阻率，而其它导电金属原子保持自由以降低电阻率，而其它导电金属原子保持自由以降低电阻率，而其它导电金属原子保持自由以降 透明氧化物的实例包括氧化铟锡，氧化锌和至多5重量％的Al的氧化锌。 金属的实例包括铝和钛。 通过调整金属与透明氧化物的比例，可以调整透明导电层的功函数以使接触的半导体匹配。

公开(公告)号：US20150318446A1

公开(公告)日：2015-11-05

申请号：US14265763

申请日：2014-04-30

申请人： Intermolecular, Inc.

发明人： Jianhua Hu ,  Heng Kai Hsu ,  Minh Huu Le ,  Sandeep Nijhawan ,  Teresa B. Sapirman

IPC分类号： H01L33/42 ,  H01L33/46 ,  H01L33/00 ,  H01L33/32

CPC分类号： H01L33/42 ,  H01L33/005 ,  H01L33/32 ,  H01L33/405 ,  H01L33/46 ,  H01L2933/0016

摘要： A ternary transparent conductive oxide, indium zinc oxide (IZO), is formed as a thin film by co-sputtering zinc oxide with indium oxide at a deposition temperature between 25 and 200 C. Optionally, up to 1-2% Al may be added by various methods. The layers may be annealed at temperatures between 200 and 400 C. Measurements of IZO with 75-85 wt % In2O3 showed low resistivity and low visible absorbance, both of which were thermally stable up to 400 C.

摘要翻译： 通过在25-200℃的沉积温度下用氧化铟共溅射氧化锌，形成三元透明导电氧化物铟锌氧化物（IZO）作为薄膜。可选地，可以添加至多1-2％的Al 通过各种方法。 这些层可以在200-400℃的温度下退火。具有75-85wt％In2O3的IZO的测量显示低电阻率和低可见吸光度，两者都高达400℃是热稳定的。

公开(公告)号：US20140170803A1

公开(公告)日：2014-06-19

申请号：US13716009

申请日：2012-12-14

申请人： INTERMOLECULAR, INC.

发明人： Teresa B. Sapirman ,  Philip A. Kraus ,  Sang M. Lee ,  Haifan Liang ,  Jeroen Van Duren

IPC分类号： H01L31/18

CPC分类号： H01L31/18 ,  C23C14/3464 ,  H01L31/0749 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

摘要： In some embodiments, Cu—In—Ga precursor films are deposited by co-sputtering from multiple targets. Specifically, the co-sputtering method is used to form layers that include In. The co-sputtering reduces the tendency for the In component to agglomerate and results in smoother, more uniform films. In some embodiments, the Ga concentration in one or more target(s) is between about 25 atomic % and about 66 atomic %. The deposition may be performed in a batch or in-line deposition system. If an in-line deposition system is used, the movement of the substrates through the system may be continuous or may follow a “stop and soak” method of substrate transport.

摘要翻译： 在一些实施方案中，通过多个靶的共溅射沉积Cu-In-Ga前体膜。 具体地，共溅射法用于形成包括In的层。 共溅射减少了In组分聚集的趋势，并导致更平滑，更均匀的膜。 在一些实施方案中，一个或多个靶中的Ga浓度为约25原子％至约66原子％。 沉积可以在批次或在线沉积系统中进行。 如果使用在线沉积系统，则衬底通过系统的移动可以是连续的，或者可以遵循衬底传送的“停止和浸泡”方法。

公开(公告)号：US09012261B2

公开(公告)日：2015-04-21

申请号：US14094379

申请日：2013-12-02

申请人： Intermolecular, Inc.

发明人： Jeroen Van Duren ,  Sang Lee ,  Minh Huu Le ,  Sandeep Nijhawan ,  Teresa B. Sapirman

IPC分类号： H01L29/66 ,  H01L29/786 ,  H01L21/306 ,  H01L21/02 ,  H01L21/465 ,  H01L21/70 ,  H01L27/12

CPC分类号： H01L21/30604 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/32134 ,  H01L21/465 ,  H01L21/707 ,  H01L27/1225 ,  H01L27/1262 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/7869

摘要： Methods for HPC techniques are applied to the processing of site-isolated regions (SIR) on a substrate to form at least a portion of a TFT device used in display applications. The processing may be applied to at least one of gate electrode deposition, gate electrode patterning, gate dielectric deposition, gate dielectric patterning, metal-based semiconductor material (e.g. IGZO) deposition, metal-based semiconductor material (e.g. IGZO) patterning, etch stop deposition, etch stop patterning, source/drain deposition, source/drain patterning, passivation deposition, or passivation patterning. The SIRs may be defined during the deposition process with uniform deposition within each SIR or the SIRs may be defined subsequent to the deposition of layers wherein the layers are deposited with a gradient in one or more properties across the substrate.

摘要翻译： 将HPC技术的方法应用于基板上的位置隔离区域（SIR）的处理，以形成在显示应用中使用的TFT器件的至少一部分。 该处理可以应用于栅电极沉积，栅极电极图案化，栅极介电沉积，栅极电介质图案化，金属基半导体材料（例如IGZO）沉积，金属基半导体材料（例如IGZO）图案化，蚀刻停止 沉积，蚀刻停止构图，源极/漏极沉积，源极/漏极图案化，钝化沉积或钝化图案化。 可以在沉积过程期间限定SIR，每个SIR内均匀沉积，或者可以在层的沉积之后定义SIR，其中层以跨越衬底的一个或多个特性的梯度沉积。

公开(公告)号：US20150093500A1

公开(公告)日：2015-04-02

申请号：US14136125

申请日：2013-12-20

申请人： Intermolecular, Inc.

发明人： Teresa B. Sapirman ,  Jianhua Hu ,  Minh Huu Le

IPC分类号： H01B13/00

CPC分类号： H01L33/405 ,  H01L2933/0016

摘要： The electrical and optical performance of silver LED reflective contacts in III-V devices such as GaN LEDs is limited by silver's tendency to agglomerate during annealing processes and to corrode on contact with silver-reactive materials elsewhere in the device (for example, gallium or aluminum). Agglomeration and reaction are prevented, and crystalline morphology of the silver layer may be optimized, by forming a diffusion-resistant transparent conductive layer between the silver and the source of silver-reacting metal, (2) doping the silver or the diffusion-resistant transparent conductive layer for improved adhesion to adjacent layers, or (3) doping the silver with titanium, which in some embodiments prevents agglomeration and promotes crystallization of the silver in the preferred orientation.

摘要翻译： III-V器件如GaN LED中的银LED反射触点的电学和光学性能受到退火过程中银的凝聚趋势的限制，并且与器件其他地方的银反应性材料（例如，镓或铝 ）。 防止聚集和反应，通过在银和银反应金属的源之间形成耐扩散的透明导电层，可以优化银层的结晶形态，（2）掺杂银或扩散阻挡的透明 导电层，用于改善与相邻层的粘附性，或（3）用钛掺杂银，在一些实施方案中，该银防止聚集并促进优选<111>取向的银的结晶。