公开(公告)号：US08872059B2

公开(公告)日：2014-10-28

申请号：US13220084

申请日：2011-08-29

Applicant: Sang-Wuk Park ,  Geum-Jung Seong ,  Kye-Hyun Baek ,  Yong-Jin Kim ,  Chan-Mi Lee

Inventor： Sang-Wuk Park ,  Geum-Jung Seong ,  Kye-Hyun Baek ,  Yong-Jin Kim ,  Chan-Mi Lee

IPC: B23K26/03 ,  B23K26/04 ,  H01L21/00 ,  B23K26/06 ,  H01L21/66 ,  H01J37/32 ,  B23K26/36

CPC classification number: B23K26/0661 ,  B23K26/032 ,  B23K26/361 ,  H01J37/32972 ,  H01L22/12 ,  H01L22/26

Abstract: Provided is an etching system and a method of controlling etching process condition. The etching system includes a light source that irradiates incident light into a target wafer, a light intensity measuring unit that measures light intensity according to the wavelength of interference light generated by interference between reflected light beams from the target wafer, a signal processor that detects a time point at which an extreme value in the intensity is generated when the intensity of interference light varies according to the wavelength, and a controller that compares the extreme value generating time point detected from the signal processor with a reference time point corresponding to the extreme value generating time point and controls a process condition according to the comparison result.

Abstract translation: 提供了蚀刻系统和控制蚀刻工艺条件的方法。 蚀刻系统包括将入射光照射到目标晶片中的光源，光强度测量单元，其根据由来自目标晶片的反射光之间的干涉产生的干涉光的波长来测量光强度;信号处理器，其检测 当干扰光的强度根据波长变化时产生强度极值的时间点，以及将从信号处理器检测的极值产生时间点与对应于极值的参考时间点进行比较的控制器 产生时间点，并根据比较结果控制过程条件。

公开(公告)号：US08664641B2

公开(公告)日：2014-03-04

申请号：US13376382

申请日：2010-05-27

Applicant: Gyu-chul Yi ,  Yong-Jin Kim

Inventor： Gyu-chul Yi ,  Yong-Jin Kim

IPC: H01L29/06

CPC classification number: B82B1/00 ,  B82Y30/00

Abstract: Disclosed herein is a nano device, including: a carbon layer including one-layered graphene having a honeycombed planar structure in which carbon atoms are connected with each other and two or more-layered monocrystalline graphite; and one or more vertically-grown nanostructures formed on the carbon layer. This nano device can be used to manufacture an integrated circuit in which various devices including a graphene electronic device and a photonic device are connected with each other, and is a high-purity and high-quality nano device having a small amount of impurities because a metal catalyst is not used.

Abstract translation: 本发明公开了一种纳米器件，包括：碳层，其包含具有蜂窝状平面结构的单层石墨烯，碳原子彼此连接，两层或更多层单晶石墨; 以及形成在碳层上的一个或多个垂直生长的纳米结构。 该纳米器件可用于制造其中包括石墨烯电子器件和光子器件的各种器件彼此连接的集成电路，并且是具有少量杂质的高纯度和高质量的纳米器件，因为 不使用金属催化剂。

公开(公告)号：US08304264B2

公开(公告)日：2012-11-06

申请号：US12858691

申请日：2010-08-18

Applicant: Sang-Wuk Park ,  Woo-Seok Kim ,  Yong-Jin Kim

Inventor： Sang-Wuk Park ,  Woo-Seok Kim ,  Yong-Jin Kim

IPC: G01R31/26

CPC classification number: H04J14/08 ,  H01L21/67069 ,  H01L21/67253

Abstract: A chamber-status monitoring apparatus includes a plurality of chambers, a time-division multiplexer configured to receive, via optical fiber probes, optical signals from each chamber, to divide each optical signal into first time slots having a predetermined duration, and to multiplex the first time slots to generate an OTDM signal, a multi-input optical emission spectroscope configured to receive and disperse the OTDM signal according to wavelengths to measure spectrum information, and a controller configured to divide the spectrum information of the dispersed OTDM signal into second time slots with a predetermined time interval therebetween, to classify the second time slots according to the chambers to obtain spectrum information of the optical signals of the individual chambers, and to control endpoint detection in each of the chambers in accordance with the spectrum information of the optical signal of the corresponding chamber.

Abstract translation: 室状态监视装置包括多个室，时分多路复用器，被配置为经由光纤探针从每个室接收光信号，以将每个光信号划分成具有预定持续时间的第一时隙，并将多路复用 用于产生OTDM信号的第一时隙;被配置为根据波长接收和分散OTDM信号以测量频谱信息的多输入光发射分光器;以及控制器，被配置为将分散的OTDM信号的频谱信息划分为第二时隙 以其间的预定时间间隔，根据室对第二时隙进行分类，以获得各个室的光信号的频谱信息，并且根据光信号的频谱信息来控制每个室中的端点检测 相应的房间。

公开(公告)号：US20120132892A1

公开(公告)日：2012-05-31

申请号：US13376382

申请日：2010-05-27

Applicant: Gyu-chul Yi ,  Yong-Jin Kim

Inventor： Gyu-chul Yi ,  Yong-Jin Kim

IPC: H01L29/772 ,  H01L29/15

CPC classification number: B82B1/00 ,  B82Y30/00

Abstract: Disclosed herein is a nano device, including: a carbon layer including one-layered graphene having a honeycombed planar structure in which carbon atoms are connected with each other and two or more-layered monocrystalline graphite; and one or more vertically-grown nanostructures formed on the carbon layer. This nano device can be used to manufacture an integrated circuit in which various devices including a graphene electronic device and a photonic device are connected with each other, and is a high-purity and high-quality nano device having a small amount of impurities because a metal catalyst is not used.

Abstract translation: 本发明公开了一种纳米器件，包括：碳层，其包含具有蜂窝状平面结构的单层石墨烯，碳原子彼此连接，两层或更多层单晶石墨; 以及形成在碳层上的一个或多个垂直生长的纳米结构。 该纳米器件可用于制造其中包括石墨烯电子器件和光子器件的各种器件彼此连接的集成电路，并且是具有少量杂质的高纯度和高质量的纳米器件，因为 不使用金属催化剂。

公开(公告)号：US20110320027A1

公开(公告)日：2011-12-29

申请号：US13207829

申请日：2011-08-11

Applicant: Kye-Hyun Baek ,  Yoon-Jae Kim ,  Yong-Jin Kim

Inventor： Kye-Hyun Baek ,  Yoon-Jae Kim ,  Yong-Jin Kim

IPC: G06F19/00

CPC classification number: H01J37/32935

Abstract: Provided are a process-parameter prognostic system for predicting the shape of a semiconductor structure, a semiconductor fabrication apparatus having the process-parameter prognostic system, and a method of using the same. The process-parameter prognostic system may have a process prediction unit and a process-change point corresponding unit. The process prediction unit and the process-change point corresponding unit may obtain predicted parameters using measured parameters of semiconductor structures and sensor parameters of plasmas corresponding to the semiconductor structures.

Abstract translation: 提供了一种用于预测半导体结构的形状的工艺参数预测系统，具有工艺参数预测系统的半导体制造装置及其使用方法。 过程参数预测系统可以具有过程预测单元和过程变化点对应单元。 处理预测单元和处理变化点对应单元可以使用半导体结构的测量参数和对应于半导体结构的等离子体的传感器参数来获得预测参数。

公开(公告)号：US20110272703A1

公开(公告)日：2011-11-10

申请号：US13145790

申请日：2009-12-09

Applicant: Ho-Jun Lee ,  Dong-Kun Lee ,  Yong-Jin Kim ,  Doo-Soo Kim

Inventor： Ho-Jun Lee ,  Dong-Kun Lee ,  Yong-Jin Kim ,  Doo-Soo Kim

IPC: H01L29/12 ,  H01L21/20 ,  H01L33/02

CPC classification number: H01L33/007 ,  H01L33/0075 ,  H01L33/10 ,  H01L33/22

Abstract: Disclosed are a semiconductor device, a light emitting device and a method for manufacturing the same. The semiconductor device includes a substrate, a plurality of rods disposed on the substrate, a plurality of particles disposed between the rods and on the substrate, and a first semiconductor layer disposed on the rods. The method for manufacturing the semiconductor device includes preparing a substrate, disposing a plurality of first particles on the substrate, and forming a plurality of rods by etching a portion of the substrate by using the first particles as an etch mask. The semiconductor device effectively reflects in an upward direction light by the above particles, so that light efficiency is improved. The rods are easily formed by using the first particles.

Abstract translation: 公开了一种半导体器件，发光器件及其制造方法。 半导体器件包括衬底，设置在衬底上的多个棒，设置在杆之间和衬底上的多个颗粒以及设置在杆上的第一半导体层。 半导体器件的制造方法包括：准备基板，在基板上配置多个第一粒子，通过使用第一粒子作为蚀刻掩模，蚀刻基板的一部分来形成多个棒。 半导体器件通过上述粒子有效地向上方向反射光，从而提高光效率。 通过使用第一颗粒容易地形成棒。

公开(公告)号：US08005562B2

公开(公告)日：2011-08-23

申请号：US12257006

申请日：2008-10-23

Applicant: Kye-Hyun Baek ,  Yoon-Jae Kim ,  Yong-Jin Kim

Inventor： Kye-Hyun Baek ,  Yoon-Jae Kim ,  Yong-Jin Kim

IPC: G06F19/00

CPC classification number: H01J37/32935

Abstract: Provided are a process-parameter prognostic system for predicting the shape of a semiconductor structure, a semiconductor fabrication apparatus having the process-parameter prognostic system, and a method of using the same. The process-parameter prognostic system may have a process prediction unit and a process-change point corresponding unit. The process prediction unit and the process-change point corresponding unit may obtain predicted parameters using measured parameters of semiconductor structures and sensor parameters of plasmas corresponding to the semiconductor structures.

Abstract translation: 提供了一种用于预测半导体结构的形状的工艺参数预测系统，具有工艺参数预测系统的半导体制造装置及其使用方法。 过程参数预测系统可以具有过程预测单元和过程变化点对应单元。 处理预测单元和处理变化点对应单元可以使用半导体结构的测量参数和对应于半导体结构的等离子体的传感器参数来获得预测参数。

公开(公告)号：US20110101797A1

公开(公告)日：2011-05-05

申请号：US12726093

申请日：2010-03-17

Applicant: Kyoung-Ho LEE ,  Hwa-Young Oh ,  Jee-Sung Lee ,  Seok-Jun Park ,  Je-Hyun Bang ,  Kwang-Hyung Lee ,  Yong-Jin Kim ,  Jun-Kun Choi

Inventor： Kyoung-Ho LEE ,  Hwa-Young Oh ,  Jee-Sung Lee ,  Seok-Jun Park ,  Je-Hyun Bang ,  Kwang-Hyung Lee ,  Yong-Jin Kim ,  Jun-Kun Choi

IPC: H02K33/00

CPC classification number: H02K33/16

Abstract: A vibration motor is disclosed. In accordance with an embodiment of the present invention, the vibration motor includes a base, a vibrator, which reciprocates, a coupling part, which is protruded on at least one of the base and the vibrator, and a leaf spring, which includes a frame and an elastic part. Here, the frame is coupled to the coupling part and disposed apart from the base or the vibrator in which the coupling part is formed, and the elastic part is extended from the frame and elastically supports the vibrator. Thus, the leaf spring can be prevented from having concentrated stress and damage occurred, thereby improving the lifetime of the leaf spring.

Abstract translation: 公开了一种振动电动机。 根据本发明的一个实施例，振动电动机包括一个基座，一个在基座和振动器中的至少一个上突出的耦合部件往复运动的振动器，以及一个板簧，它包括一个框架 和弹性部分。 这里，框架联接到联接部分并且与基座或其中形成有联接部件的振动器分离，并且弹性部分从框架延伸并弹性地支撑振动器。 因此，可以防止板簧发生集中的应力和损伤，从而提高板簧的寿命。

公开(公告)号：US20100141561A1

公开(公告)日：2010-06-10

申请号：US12591975

申请日：2009-12-07

Applicant: Du-Yeon Han ,  Hee-Hwan Kim ,  Yong-Jin Kim ,  Keun-Young Song ,  Hyun-Woo Lee ,  Seung-Yong Lee ,  Kyung-Sub Shim

Inventor： Du-Yeon Han ,  Hee-Hwan Kim ,  Yong-Jin Kim ,  Keun-Young Song ,  Hyun-Woo Lee ,  Seung-Yong Lee ,  Kyung-Sub Shim

IPC: G09G3/28

CPC classification number: H01J11/46 ,  H01J11/12

Abstract: A plasma display device includes a PDP including discharge cells, address electrodes extending in a first direction and corresponding to the discharge cells, and sustain electrodes and scan electrodes in parallel with each other and crossing the address electrodes in the discharge cells, the sustain electrodes including first terminals and the scan electrodes including second terminals, a chassis base supporting PDP, an integrated board on the chassis base, the chassis base being between the integrated board and the PDP, and an integrated flexible circuit connecting the integrated board to the first terminals of the sustain electrodes and to the second terminals of the scan electrodes, the first terminals of the sustain electrodes and second terminals of the scan electrodes being arranged at a first side of four sides of the PDP.

Abstract translation: 等离子体显示装置包括：PDP，包括放电单元，沿着第一方向延伸并对应于放电单元的寻址电极，维持电极和扫描电极彼此并联并与放电单元中的寻址电极交叉，维持电极包括 第一端子和扫描电极包括第二端子，底架支撑PDP，底板上的集成板，集成板和PDP之间的底板，以及将集成板连接到第一端子的集成柔性电路 维持电极和扫描电极的第二端子，维持电极的第一端子和扫描电极的第二端子布置在PDP的四边的第一侧。

公开(公告)号：US20100120178A1

公开(公告)日：2010-05-13

申请号：US12616510

申请日：2009-11-11

Applicant: Seok-Hyun Lim ,  Myeong-Cheol Kim ,  Yong-Jin Kim ,  Moon-Sang Lee ,  Ki-Chul Hwang

Inventor： Seok-Hyun Lim ,  Myeong-Cheol Kim ,  Yong-Jin Kim ,  Moon-Sang Lee ,  Ki-Chul Hwang

IPC: H01L21/66

CPC classification number: H01L22/12 ,  H01L22/20

Abstract: A process control method includes setting first through fourth conditions, forming a first pattern by performing a first process on a semiconductor wafer, measuring the first pattern using a first measuring equipment to obtain a first result, comparing the first result with the first condition, forming a second pattern by performing a second process on the semiconductor wafer, comparing a period of the second process with the second condition, measuring the second pattern using a second measuring equipment to obtain a second result, comparing the second result with the third condition, forming a third pattern by performing a third process on the semiconductor wafer, measuring the third pattern using the a second measuring equipment to obtain a third result, and comparing the third result with the fourth condition.

Abstract translation: 一种处理控制方法，包括设置第一至第四条件，通过在半导体晶片上执行第一处理形成第一图案，使用第一测量设备测量第一图案以获得第一结果，将第一结果与第一条件进行比较，形成 第二模式，通过在半导体晶片上执行第二处理，将第二处理的周期与第二条件进行比较，使用第二测量设备测量第二模式以获得第二结果，将第二结果与第三条件进行比较，形成 通过在半导体晶片上进行第三处理，使用第二测量设备测量第三图案以获得第三结果，并将第三结果与第四条件进行比较，从而形成第三图案。