Organic thin-film transistor substrate and fabrication method therefor
    91.
    发明授权
    Organic thin-film transistor substrate and fabrication method therefor 有权
    有机薄膜晶体管基板及其制造方法

    公开(公告)号:US07803669B2

    公开(公告)日:2010-09-28

    申请号:US11766597

    申请日:2007-06-21

    IPC分类号: H01L21/339

    摘要: An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode facing the source electrode, and an organic semiconductor layer forming a channel between the source and drain electrodes, a passivation layer parallel with the gate line, for covering the organic semiconductor layer and peripheral regions of the organic semiconductor layer, and a bank insulating layer for determining the position of the organic semiconductor layer and the passivation layer.

    摘要翻译: 有机薄膜晶体管基板包括形成在基板上的栅极线,与栅极线相交并且限定子像素区域的数据线,包括连接到栅极线的栅电极的有机薄膜晶体管,连接到数据的源电极 线路,面对源电极的漏极电极和形成源极和漏极之间的沟道的有机半导体层,与栅极线平行的钝化层,用于覆盖有机半导体层和有机半导体层的外围区域,以及 用于确定有机半导体层和钝化层的位置的堤绝缘层。

    MOBILE DEVICE HAVING PROJECTOR MODULE AND DISPLAY METHOD FOR DATA PROJECTED ONTO EXTERNAL DISPLAY SCREEN FROM THE PROJECTOR MODULE
    93.
    发明申请
    MOBILE DEVICE HAVING PROJECTOR MODULE AND DISPLAY METHOD FOR DATA PROJECTED ONTO EXTERNAL DISPLAY SCREEN FROM THE PROJECTOR MODULE 审中-公开
    具有投影模块的移动装置和用于从投影模块投影到外部显示屏幕的数据的显示方法

    公开(公告)号:US20100195064A1

    公开(公告)日:2010-08-05

    申请号:US12698254

    申请日:2010-02-02

    IPC分类号: G03B21/14

    CPC分类号: G03B21/14

    摘要: A mobile device has a projector module which projects data onto an external display screen. A method for displaying data in the mobile device includes activating the projector module and detecting output property information in at least one of content and an application. The method further includes determining a display format of output data of the content or the application based on the detected output property information. Also, the method includes projecting the output data in the determined display format through the activated projector module in a horizontal or vertical orientation. Such a display format may be changed according to a user's preference or a device presetting environment.

    摘要翻译: 移动设备具有将数据投影到外部显示屏上的投影仪模块。 一种用于在移动设备中显示数据的方法包括激活投影仪模块并检测内容和应用中的至少一个中的输出属性信息。 该方法还包括基于检测到的输出属性信息来确定内容或应用的输出数据的显示格式。 此外,该方法包括以确定的显示格式通过激活的投影仪模块以水平或垂直方向投影输出数据。 这样的显示格式可以根据用户的偏好或设备预设环境而改变。

    Thin film transistor array panel and manufacturing method thereof
    94.
    发明授权
    Thin film transistor array panel and manufacturing method thereof 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US07768000B2

    公开(公告)日:2010-08-03

    申请号:US11864581

    申请日:2007-09-28

    IPC分类号: H01L35/24 H01L51/00

    摘要: A manufacturing method for a thin film transistor array panel including forming a gate electrode, forming an insulating layer on the gate electrode, sequentially forming a lower conducting layer and a upper conducting layer on the insulating layer, etching the upper conducting layer to form a first source electrode and a first drain electrode, etching the lower conducting layer to form the second source electrode and the second drain electrode, over-etching the second source electrode and the second drain electrode, and forming an organic semiconductor between the second source electrode and the second drain electrode.

    摘要翻译: 一种薄膜晶体管阵列板的制造方法,包括形成栅电极,在栅电极上形成绝缘层,在绝缘层上依次形成下导电层和上导电层,蚀刻上导电层以形成第一 源电极和第一漏电极,蚀刻下导电层以形成第二源电极和第二漏电极,过蚀刻第二源电极和第二漏电极,以及在第二源电极和第二漏电极之间形成有机半导体 第二漏电极。

    Thin film transistor array panel and manufacture thereof
    95.
    发明授权
    Thin film transistor array panel and manufacture thereof 有权
    薄膜晶体管阵列及其制造

    公开(公告)号:US07737448B2

    公开(公告)日:2010-06-15

    申请号:US11927377

    申请日:2007-10-29

    IPC分类号: H01L27/14

    摘要: A method for a thin film transistor array panel includes forming a gate line and a pixel electrode on a substrate, forming a gate insulating layer covering the gate line, forming a data line including a source electrode and a drain electrode on the gate insulating layer, forming an interlayer insulating layer covering the data line and the drain electrode on the gate insulating layer, forming a first opening in the interlayer insulating layer, forming an organic semiconductor in the first opening, forming a passivation layer on the organic semiconductor and the interlayer insulating layer, and forming a second opening in the interlayer insulating layer to expose the pixel electrode.

    摘要翻译: 一种薄膜晶体管阵列面板的制造方法,在基板上形成栅极线和像素电极,形成覆盖栅极线的栅极绝缘层,在栅极绝缘层上形成包括源电极和漏极的数据线, 在所述栅绝缘层上形成覆盖所述数据线和所述漏电极的层间绝缘层,在所述层间绝缘层中形成第一开口,在所述第一开口中形成有机半导体,在所述有机半导体上形成钝化层, 并且在所述层间绝缘层中形成第二开口以使所述像素电极露出。

    Thin film transistor array panel and method of manufacture
    96.
    发明授权
    Thin film transistor array panel and method of manufacture 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US07719009B2

    公开(公告)日:2010-05-18

    申请号:US11764560

    申请日:2007-06-18

    IPC分类号: H01L29/04

    CPC分类号: H01L51/0545 H01L27/283

    摘要: A thin film transistor array panel includes a gate line formed on a substrate, an interlayer insulating film formed on the gate line and having an opening, a gate insulator formed in the opening, a data line formed on the interlayer insulating film and including a first conductive layer made of a transparent conductive oxide and a second conductive layer made of a metal, a source electrode connected to the data line and made of a transparent conductive oxide, a drain electrode facing the source electrode and made of a transparent conductive oxide, a pixel electrode connected to the drain electrode, and an organic semiconductor contacting the source electrode and the drain electrode.

    摘要翻译: 薄膜晶体管阵列面板包括形成在基板上的栅极线,形成在栅极线上并具有开口的层间绝缘膜,形成在开口中的栅绝缘体,形成在层间绝缘膜上的数据线,并且包括第一 由透明导电氧化物制成的导电层和由金属制成的第二导电层,连接到数据线并由透明导电氧化物制成的源电极,面对源极的漏电极并由透明导电氧化物制成, 连接到漏电极的像素电极以及与源电极和漏极接触的有机半导体。

    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
    97.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 有权
    薄膜晶体管阵列及其制造方法

    公开(公告)号:US20100038647A1

    公开(公告)日:2010-02-18

    申请号:US12369646

    申请日:2009-02-11

    IPC分类号: H01L33/00 H01L29/786

    摘要: A thin film transistor substrate according to one or more embodiments of the present invention includes a gate line formed on a substrate, a data line that is insulated from and intersects the gate line, a thin film transistor connected to the gate line and the data line, a barrier rub formed on the thin film transistor and partitioning a plurality of first openings, a reflecting electrode formed in each of the first openings, and a pixel electrode formed on the reflecting electrode and that is electrically connected to the thin film transistor.

    摘要翻译: 根据本发明的一个或多个实施例的薄膜晶体管基板包括形成在基板上的栅极线,与栅极线绝缘并与之相交的数据线,连接到栅极线和数据线的薄膜晶体管 形成在薄膜晶体管上并分隔多个第一开口的阻挡擦拭物,形成在每个第一开口中的反射电极以及形成在反射电极上且与薄膜晶体管电连接的像素电极。

    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    98.
    发明申请
    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 失效
    显示装置及其制造方法

    公开(公告)号:US20100006832A1

    公开(公告)日:2010-01-14

    申请号:US12561218

    申请日:2009-09-16

    IPC分类号: H01L51/10 H01L51/40

    摘要: According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.

    摘要翻译: 根据本发明的实施例,显示装置的制造方法包括在绝缘基板上形成包括栅电极的多条栅极线,形成包括彼此间隔开的源电极和漏极的电极层, 在所述栅极电极之间限定沟道区,形成第一阻挡壁,所述第一阻挡壁具有用于暴露所述沟道区的第一开口,所述源极的一部分以及所述第一阻挡壁具有的所述电极层上的所述漏电极的一部分 形成屏蔽膜以覆盖第一开口内的沟道区域,处理第一阻挡壁的表面,去除屏蔽膜,以及在第一开口内部形成有机半导体层。