公开(公告)号：USD783351S1

公开(公告)日：2017-04-11

申请号：US29544977

申请日：2015-11-09

申请人： Hitachi Kokusai Electric Inc.

设计人： Toshiki Fujino ,  Kosuke Takagi ,  Ryota Sasajima

公开(公告)号：US09613798B2

公开(公告)日：2017-04-04

申请号：US14634280

申请日：2015-02-27

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Ryuji Yamamoto ,  Yoshiro Hirose ,  Satoshi Shimamoto

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36 ,  C23C16/455 ,  C23C16/52

CPC分类号： H01L21/02167 ,  C23C16/308 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/52 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228

摘要： A technique includes forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer containing the first element and carbon by supplying a precursor gas having a chemical bond of the first element and carbon from a first supply part to the substrate in a process chamber, and forming a second layer by supplying a reaction gas containing the second element from a second supply part to the substrate in the process chamber and supplying a plasma-excited inert gas from a third supply part to the substrate in the process chamber to modify the first layer, the third supply part being different from the second supply part.

公开(公告)号：US20170092490A1

公开(公告)日：2017-03-30

申请号：US15275854

申请日：2016-09-26

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Hirohisa YAMAZAKI ,  Noriyuki ISOBE ,  Hiroshi ASHIHARA

IPC分类号： H01L21/02 ,  H01L29/78

CPC分类号： H01L21/02186 ,  C23C16/405 ,  C23C16/45531 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/0337 ,  H01L29/7843

摘要： Provided is a technique for forming a film having a desired stress on a substrate. A method of manufacturing a semiconductor device includes: forming a film having a predetermined stress on a substrate by controlling a ratio of a thickness of a first film having compressive stress to a thickness of a second film having tensile stress by performing: (a) supplying an organic source gas containing a first element and a reactive gas containing a second element to the substrate to form the first film containing the first element and the second element; and (b) supplying an inorganic source gas containing the first element and the reactive gas to the substrate to form the second film containing the first element and the second element.

公开(公告)号：US09607827B2

公开(公告)日：2017-03-28

申请号：US14638396

申请日：2015-03-04

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Yoshiro Hirose ,  Atsushi Sano ,  Katsuyoshi Harada

IPC分类号： H01L21/00 ,  H01L21/02 ,  C23C16/24 ,  C23C16/36 ,  C23C16/455

CPC分类号： H01L21/0228 ,  C23C16/24 ,  C23C16/36 ,  C23C16/45525 ,  H01L21/02123 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of manufacturing a semiconductor device includes performing a cycle a predetermined number of times, the cycle including supplying a first precursor containing a specific element and a halogen group to form a first layer and supplying a second precursor containing the specific element and an amino group to modify the first layer into a second layer. A temperature of the substrate is set such that a ligand containing the amino group is separated from the specific element in the second precursor, the separated ligand reacts with the halogen group in the first layer to remove the halogen group from the first layer, the separated ligand is prevented from being bonded to the specific element in the first layer, and the specific element from which the ligand is separated in the second precursor is bonded to the specific element in the first layer.

公开(公告)号：US09601326B2

公开(公告)日：2017-03-21

申请号：US14601634

申请日：2015-01-21

申请人： Hitachi Kokusai Electric Inc.

发明人： Naonori Akae ,  Tatsuya Yotsutani

IPC分类号： C23C16/455 ,  H01L21/02 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36 ,  C23C16/44 ,  C23C16/507

CPC分类号： H01L21/0228 ,  C23C16/30 ,  C23C16/308 ,  C23C16/345 ,  C23C16/36 ,  C23C16/4412 ,  C23C16/45531 ,  C23C16/45546 ,  C23C16/45557 ,  C23C16/507 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274

摘要： A method of manufacturing a semiconductor device is provided which includes a step of performing a cycle, a predetermined number of times, to form a film on a substrate, the cycle including non-simultaneously performing: (a) a step of supplying a source gas to the substrate in a process chamber; (b) a step of removing the source gas from the process chamber; (c) a step of supplying a reactive gas having a chemical structure different from that of the source gas to the substrate in the process chamber; and (d) a step of removing the reactive gas from the process chamber, wherein the (d) includes alternately repeating: (d-1) a step of exhausting an inside of the process chamber to depressurize the inside of the process chamber; and (d-2) a step of purging the inside of the process chamber using an inert gas.

公开(公告)号：USD778741S1

公开(公告)日：2017-02-14

申请号：US29536757

申请日：2015-08-19

申请人： Hitachi Kokusai Electric Inc.

设计人： Akihiro Osaka ,  Hideto Yamaguchi ,  Motoya Takewaki

公开(公告)号：US20170040157A1

公开(公告)日：2017-02-09

申请号：US15223288

申请日：2016-07-29

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Yoshitomo HASHIMOTO ,  Yoshiro HIROSE ,  Tatsuru MATSUOKA

IPC分类号： H01L21/02 ,  C23C16/52 ,  C23C16/455

CPC分类号： H01L21/0228 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/45546 ,  H01L21/02126

摘要： A method of manufacturing a semiconductor device includes a process of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor containing a predetermined element to the substrate; supplying a first reactant containing nitrogen and carbon to the substrate; supplying a second reactant containing nitrogen to the substrate; and supplying a third reactant containing oxygen to the substrate, wherein in the cycle, a supply amount of the second reactant is set to be smaller than a supply amount of the first reactant.

摘要翻译： 制造半导体器件的方法包括通过执行预定次数的循环在衬底上形成膜的工艺。 该循环包括：将含有预定元素的前体供应到基底; 向所述基底供应含有氮和碳的第一反应物; 向所述基底供应含有氮的第二反应物; 以及将含有氧的第三反应物供给到所述基材中，其中在所述循环中，将所述第二反应物的供给量设定为小于所述第一反应物的供给量。

公开(公告)号：US09559022B1

公开(公告)日：2017-01-31

申请号：US15195086

申请日：2016-06-28

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Tsuyoshi Takeda ,  Toshiyuki Kikuchi

IPC分类号： H01L21/02 ,  H01L21/66

CPC分类号： H01L22/20 ,  C23C16/45542 ,  C23C16/52 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/32449 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L22/10

摘要： A method of manufacturing a semiconductor device, includes: forming a film, wherein the act of forming a film includes: transferring a substrate to a process chamber; supplying a first gas to the substrate; and supplying a second gas to the substrate by converting the second gas to plasma with a first high-frequency wave; and performing an adjustment after the act of forming the film, wherein the act of performing includes: measuring a charging condition of the substrate, setting a second high-frequency wave based on the measured charging condition, supplying a third gas to the substrate by converting the third gas to plasma with the second high-frequency wave, and adjusting the charging condition of the substrate.

摘要翻译： 一种制造半导体器件的方法，包括：形成膜，其中形成膜的动作包括：将基板转印到处理室; 向基板供应第一气体; 以及通过用所述第一高频波将所述第二气体转换成等离子体而将第二气体供给到所述基板; 以及在形成所述膜的动作之后执行调整，其中所述执行动作包括：测量所述基板的充电状态，基于所测量的充电条件设定第二高频波，通过转换来向所述基板供应第三气体 第三气体与第二高频波等离子体，并调节基板的充电状态。

公开(公告)号：US09558937B2

公开(公告)日：2017-01-31

申请号：US14886768

申请日：2015-10-19

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Kimihiko Nakatani ,  Kazuhiro Harada ,  Hiroshi Ashihara ,  Ryuji Yamamoto

IPC分类号： H01L21/02 ,  C23C16/52 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  C23C16/06 ,  C23C16/14 ,  C23C16/56 ,  H01L29/51 ,  H01L21/768

CPC分类号： H01L21/0228 ,  C23C16/06 ,  C23C16/14 ,  C23C16/45527 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02123 ,  H01L21/02172 ,  H01L21/02205 ,  H01L21/02318 ,  H01L21/28079 ,  H01L21/28562 ,  H01L21/76877 ,  H01L29/517

摘要： A method of manufacturing a semiconductor device includes: (a) forming a first film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a first precursor gas being a fluorine-free inorganic gas containing the metal element to the substrate; and (a-2) supplying a first reactant gas having reducibility to the substrate; (b) forming a second film containing the metal element on the first film by performing a cycle a predetermined number of times, the cycle including: (b-1) supplying a second precursor gas containing the metal element and fluorine to the substrate; and (b-2) supplying a second reactant gas having reducibility to the substrate; and (c) forming a film containing the metal element and obtained by the first film and the second film being laminated on the substrate by performing the (a) and (b).

摘要翻译： 一种制造半导体器件的方法包括：（a）通过执行预定次数的循环，在衬底上形成含有金属元素的第一膜，该循环包括：（a-1）提供作为氟的第一前体气体 将含有金属元素的无机气体加入到基材中; 和（a-2）向所述基板供给具有还原性的第一反应气体; （b）通过执行预定次数的循环在第一膜上形成含有金属元素的第二膜，该循环包括：（b-1）向基板供给含有金属元素和氟的第二前体气体; 和（b-2）向所述基板供给具有还原性的第二反应气体; 和（c）通过执行（a）和（b），形成含有金属元素并通过第一膜和第二膜层压在基板上的膜。

公开(公告)号：US20170018419A1

公开(公告)日：2017-01-19

申请号：US15124915

申请日：2014-03-13

申请人： HITACHI KOKUSAI ELECTRIC INC.

发明人： Takuro USHIDA ,  Tsukasa KAMAKURA ,  Yoshiro HIROSE ,  Kimihiko NAKATANI

IPC分类号： H01L21/02 ,  C23C16/52 ,  C23C16/455 ,  C23C16/40

CPC分类号： H01L21/0228 ,  C23C16/405 ,  C23C16/45527 ,  C23C16/45534 ,  C23C16/52 ,  H01L21/02186 ,  H01L21/02277

摘要： A method of manufacturing: a semiconductor device includes fanning an oxide film containing a metal element on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor containing a metal element and a halogen group to the substrate; and supplying an oxidant to the substrate. In the act of supplying the oxidant, a catalyst is supplied to the substrate together with the oxidant. In the act of supplying the precursor, the catalyst is not supplied to the substrate.

摘要翻译： 一种制造方法：半导体器件包括通过执行预定次数的循环来将包含金属元素的氧化物膜进行扇形化，所述循环包括非同时执行：将含有金属元素和卤素基团的前体供应到 基材; 并向衬底供应氧化剂。 在供给氧化剂的作用下，与氧化剂一起将催化剂供应到基材。 在提供前体的作用下，不向催化剂供应催化剂。