公开(公告)号：US09865673B2

公开(公告)日：2018-01-09

申请号：US14666624

申请日：2015-03-24

Applicant: International Business Machines Corporation

Inventor： Hariklia Deligianni ,  William J. Gallagher ,  Andrew J. Kellock ,  Eugene J. O'Sullivan ,  Lubomyr T. Romankiw ,  Naigang Wang

IPC: H01F27/00 ,  H01L49/02 ,  H01L21/288 ,  H01F5/00 ,  H01F1/04 ,  H01F27/24 ,  H01F27/28 ,  H01F41/04 ,  C23C18/16 ,  H01L23/522 ,  H01F41/26

CPC classification number: H01L28/10 ,  C23C18/16 ,  C23C18/1605 ,  C23C18/165 ,  C23C18/1651 ,  C23C18/1673 ,  C23C18/168 ,  C23C18/1694 ,  C23C18/1696 ,  C23C18/1831 ,  C23C18/50 ,  H01F1/04 ,  H01F5/00 ,  H01F27/00 ,  H01F27/24 ,  H01F27/28 ,  H01F41/046 ,  H01F41/26 ,  H01L21/288 ,  H01L21/2885 ,  H01L23/5227

Abstract: An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

公开(公告)号：US20160284788A1

公开(公告)日：2016-09-29

申请号：US14744127

申请日：2015-06-19

Applicant: International Business Machines Corporation

Inventor： Hariklia Deligianni ,  William J. Gallagher ,  Andrew J. Kellock ,  Eugene J. O'Sullivan ,  Lubomyr T. Romankiw ,  Naigang Wang

IPC: H01L49/02 ,  H01L21/288

CPC classification number: H01L28/10 ,  C23C18/16 ,  C23C18/1605 ,  C23C18/165 ,  C23C18/1651 ,  C23C18/1673 ,  C23C18/168 ,  C23C18/1694 ,  C23C18/1696 ,  C23C18/1831 ,  C23C18/50 ,  H01F1/04 ,  H01F5/00 ,  H01F27/00 ,  H01F27/24 ,  H01F27/28 ,  H01F41/046 ,  H01F41/26 ,  H01L21/288 ,  H01L21/2885 ,  H01L23/5227

Abstract: An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

公开(公告)号：US09437668B1

公开(公告)日：2016-09-06

申请号：US14744127

申请日：2015-06-19

Applicant: International Business Machines Corporation

Inventor： Hariklia Deligianni ,  William J. Gallagher ,  Andrew J. Kellock ,  Eugene J. O'Sullivan ,  Lubomyr T. Romankiw ,  Naigang Wang

IPC: H01F5/00 ,  H01L49/02 ,  H01L21/288

CPC classification number: H01L28/10 ,  C23C18/16 ,  C23C18/1605 ,  C23C18/165 ,  C23C18/1651 ,  C23C18/1673 ,  C23C18/168 ,  C23C18/1694 ,  C23C18/1696 ,  C23C18/1831 ,  C23C18/50 ,  H01F1/04 ,  H01F5/00 ,  H01F27/00 ,  H01F27/24 ,  H01F27/28 ,  H01F41/046 ,  H01F41/26 ,  H01L21/288 ,  H01L21/2885 ,  H01L23/5227

Abstract: An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

Abstract translation: 芯片上的磁性结构包括基于磁性材料的总原子数约80至约90原子％（原子百分比）的钴包含钴的磁性材料，在约4至约9的范围内的钨 在。 基于磁性材料的总原子数量的％，磷在约7至约15at 3的范围内。 基于磁性材料的原子总数的％，以及基本上分散在整个磁性材料中的钯。

公开(公告)号：US20150079785A1

公开(公告)日：2015-03-19

申请号：US14384861

申请日：2013-02-22

Applicant: Tokyo Electron Limited

Inventor： Nobutaka Mizutani ,  Takashi Tanaka ,  Yuichiro Inatomi ,  Yusuke Saito ,  Mitsuaki Iwashita

IPC: H01L21/768 ,  C23C18/16 ,  C23C14/24

CPC classification number: H01L21/76867 ,  C23C14/024 ,  C23C14/046 ,  C23C14/24 ,  C23C16/0272 ,  C23C16/045 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/165 ,  C23C18/1651 ,  C23C18/1653 ,  C23C18/1692 ,  C23C18/1694 ,  C23C18/1844 ,  C23C18/1893 ,  C23C18/38 ,  C23C28/322 ,  C23C28/34 ,  H01L21/288 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76898

Abstract: A plating method can improve adhesivity with a substrate. The plating method of performing a plating process on the substrate includes forming a vacuum-deposited layer 2A on the substrate 2 by performing a vacuum deposition process on the substrate 2; forming an adhesion layer 21 and a catalyst adsorption layer 22 on the vacuum-deposited layer 2A of the substrate 2; and forming a plating layer stacked body 23 having a first plating layer 23a and a second plating layer 23b which function as a barrier film on the catalyst adsorption layer 22 of the substrate 2. By forming the vacuum-deposited layer 2A, a surface of the substrate 2 can be smoothened, so that the vacuum-deposited layer 2A serving as an underlying layer can improve the adhesivity.

Abstract translation: 电镀方法可以改善与基材的粘合性。 对基板进行电镀处理的电镀方法包括通过在基板2上进行真空蒸镀工序，在基板2上形成真空蒸镀层2A， 在基板2的真空蒸镀层2A上形成粘接层21和催化剂吸附层22; 并且在基板2的催化剂吸附层22上形成具有作为阻挡膜的第一镀层23a和第二镀层23b的镀层层叠体23.通过形成真空蒸镀层2A， 基板2可以被平滑化，使得用作下层的真空沉积层2A可以改善粘合性。

公开(公告)号：US06905622B2

公开(公告)日：2005-06-14

申请号：US10117712

申请日：2002-04-03

Applicant: Deenesh Padhi ,  Joseph Yahalom ,  Sivakami Ramanathan ,  Chris R. McGuirk ,  Srinivas Gandikota ,  Girish Dixit

Inventor： Deenesh Padhi ,  Joseph Yahalom ,  Sivakami Ramanathan ,  Chris R. McGuirk ,  Srinivas Gandikota ,  Girish Dixit

IPC: C23C18/16 ,  H01L21/02 ,  H01L21/285 ,  H01L21/288 ,  H01L21/306 ,  H01L21/321 ,  H01L21/768 ,  B44C1/22 ,  B05D3/04 ,  B05D3/10

CPC classification number: H01L21/02074 ,  C23C18/1694 ,  C23C18/1831 ,  C23C18/1834 ,  C23C18/1851 ,  C23C18/1879 ,  C23C18/1882 ,  C23C18/1893 ,  C23C18/31 ,  C23C18/34 ,  C23C18/36 ,  C23C18/50 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76874 ,  H01L2221/1089

Abstract: Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.

公开(公告)号：US20180076275A1

公开(公告)日：2018-03-15

申请号：US15817858

申请日：2017-11-20

Applicant: International Business Machines Corporation

Inventor： Hariklia Deligianni ,  William J. Gallagher ,  Andrew J. Kellock ,  Eugene J. O'Sullivan ,  Lubomyr T. Romankiw ,  Naigang Wang

IPC: H01L49/02 ,  H01F27/28 ,  H01F27/24 ,  H01F41/26 ,  H01L23/522 ,  C23C18/16 ,  H01F5/00 ,  H01L21/288 ,  H01F1/04 ,  H01F27/00 ,  H01F41/04

CPC classification number: H01L28/10 ,  C23C18/16 ,  C23C18/1605 ,  C23C18/165 ,  C23C18/1651 ,  C23C18/1673 ,  C23C18/168 ,  C23C18/1694 ,  C23C18/1696 ,  C23C18/1831 ,  C23C18/50 ,  H01F1/04 ,  H01F5/00 ,  H01F27/00 ,  H01F27/24 ,  H01F27/28 ,  H01F41/046 ,  H01F41/26 ,  H01L21/288 ,  H01L21/2885 ,  H01L23/5227

Abstract: An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

公开(公告)号：US20150361571A1

公开(公告)日：2015-12-17

申请号：US14761179

申请日：2014-01-15

Applicant: SAVROC LTD

Inventor： Juha MIETTINEN ,  Jussi RAISA

IPC: C25D5/14 ,  C23C18/16 ,  C25D3/06 ,  C23C14/22 ,  C25D5/50 ,  C23C16/455 ,  C23C18/32

CPC classification number: C25D5/14 ,  C23C12/00 ,  C23C12/02 ,  C23C14/22 ,  C23C16/45525 ,  C23C18/1651 ,  C23C18/1694 ,  C23C18/1844 ,  C23C18/32 ,  C23C18/36 ,  C23C28/321 ,  C23C28/341 ,  C23C28/345 ,  C25D3/06 ,  C25D5/50 ,  C25D5/505 ,  Y10T428/12944

Abstract: A method for producing a trivalent chromium based coating on a metal substrate, a layer of nickel phosphorus alloy is deposited on a metal substrate and a trivalent chromium layer is electroplated on the Ni—P layer. The coated metal substrate is subjected to one or more heat treatments to harden the coating and to produce multiphase layers including at least one layer containing crystalline Ni and crystalline Ni3P, and at least one layer containing crystalline Cr and crystalline CrNi. By using this method it is possible to produce coatings having a Vickers microhardness value higher than 2000 HV.

Abstract translation: 在金属基板上制造三价铬系涂层的方法，在金属基板上沉积镍磷合金层，在Ni-P层上电镀三价铬层。 对涂覆的金属基材进行一次或多次热处理以使涂层硬化并产生包括至少一层含有结晶Ni和结晶Ni 3 P的多相层，以及含有结晶Cr和结晶CrNi的至少一层。 通过使用该方法，可以生产维氏硬度值高于2000HV的涂层。

公开(公告)号：US20140017410A1

公开(公告)日：2014-01-16

申请号：US13976323

申请日：2011-12-27

Applicant: Ganesh Ravindra Kale

Inventor： Ganesh Ravindra Kale

IPC: C23C10/26

CPC classification number: C23C10/26 ,  C23C18/1619 ,  C23C18/1644 ,  C23C18/1648 ,  C23C18/1658 ,  C23C18/166 ,  C23C18/1682 ,  C23C18/1694 ,  C23C18/1837

Abstract: An electroless plating method for use in metal plating on a porous substrate is disclosed. It uses selective contact of the plating metal salt solution with a reducing solution on the activated surface on or inside the porous substrate. This electroless plating method in the setup is useful for unmanned, automatic operation resulting in almost 100% membrane (pure/composite) with substantially no pinholes or cracks.

Abstract translation: 公开了一种用于多孔基材上的金属电镀的无电镀方法。 它使用电镀金属盐溶液与多孔基材上面或内部的活化表面上的还原溶液的选择性接触。 该设置中的无电镀方法对于无人自动操作是有用的，导致几乎100％的膜（纯/复合），基本上没有针孔或裂纹。

公开(公告)号：US20040241833A1

公开(公告)日：2004-12-02

申请号：US10240148

申请日：2003-10-22

Inventor： Benoit Girard ,  Marie-Pierre Bacos ,  Eric Berger ,  Pierre Josso

IPC: C12M001/34 ,  C25D003/56

CPC classification number: C23C18/1671 ,  C23C18/1637 ,  C23C18/165 ,  C23C18/1653 ,  C23C18/1662 ,  C23C18/1669 ,  C23C18/1676 ,  C23C18/1694 ,  C23C18/1696 ,  C23C18/34 ,  Y02T50/67 ,  Y02T50/6765

Abstract: The invention concerns a method wherein the substrate (5) to be coated is immersed in an autocatalytic chemical deposit bath (4), for example nickel, contained in a stainless steel vessel (1) and wherein can be optionally mixed a suspended MCrAlY alloy, so as to form a metal deposit (nickel) wherein are optionally included powder particles. The invention is characterised in that, to provide a prolonged operation of the bath, it consists in measuring with a voltmeter (8) the difference of potential between the substrate (5) and a reference electrode (6) immersed in the bath (4), and in imposing between the substrate (5) and the vessel (1) an electric current produced by a generator (10), said current being adjusted by a regulator (11) so as to maintain said potential difference at a selected value.

Abstract translation: 本发明涉及一种方法，其中待涂覆的基底（5）浸入包含在不锈钢容器（1）中的自动催化化学沉积浴（4），例如镍中，并且其中可以任选地将悬浮的MCrAlY合金， 以形成金属沉积物（镍），其中任选地包括粉末颗粒。 本发明的特征在于，为了提供浴的长时间操作，它包括用电压表（8）测量衬底（5）和浸入浴（4）中的参比电极（6）之间的电位差， 并且在衬底（5）和容器（1）之间施加由发电机（10）产生的电流，所述电流由调节器（11）调节，以将所述电位差保持在选定值。

公开(公告)号：US20030190426A1

公开(公告)日：2003-10-09

申请号：US10117710

申请日：2002-04-03

Inventor： Deenesh Padhi ,  Joseph Yahalom ,  Sivakami Ramanathan ,  Chris R. McGuirk ,  Srinivas Gandikota ,  Girish Dixit

IPC: B05D003/10 ,  B05D001/36

CPC classification number: H01L28/84 ,  C23C18/1651 ,  C23C18/1694 ,  C23C18/1834 ,  C23C18/1844 ,  C23C18/1879 ,  C23C18/1882 ,  C23C18/32 ,  C23C18/50

Abstract: Methods and apparatus are provided for forming a metal or metal silicide layer by an electroless deposition technique. In one aspect, a method is provided for processing a substrate including depositing an initiation layer on a substrate surface, cleaning the substrate surface, and depositing a conductive material on the initiation layer by exposing the initiation layer to an electroless solution. The method may further comprise etching the substrate surface with an acidic solution and cleaning the substrate of the acidic solution prior to depositing the initiation layer. The initiation layer may be formed by exposing the substrate surface to a noble metal electroless solution or a borane-containing solution. The conductive material may be deposited with a borane-containing reducing agent. The conductive material may be used as a passivation layer, a barrier layer, a seed layer, or for use in forming a metal silicide layer.