公开(公告)号：US08883033B2

公开(公告)日：2014-11-11

申请号：US13784846

申请日：2013-03-05

Applicant: United Microelectronics Corp.

Inventor： Chi-Sheng Chen ,  Shin-Chi Chen ,  Chih-Yueh Li ,  Ted Ming-Lang Guo ,  Bo-Syuan Lee ,  Tsung-Hsun Tsai ,  Yu-Chin Cheng

IPC: B44C1/22 ,  H01L21/302 ,  H01L21/308

CPC classification number: H01L21/308 ,  H01L21/31111 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659

Abstract: A method for removing silicon nitride material includes following steps. A substrate having at least a gate structure formed thereon is provided, and at least a silicon nitride hard mask is formed on top of the gate structure. A first removal is performed to remove a portion of the silicon nitride hard mask with a first phosphoric acid (H3PO4) solution. A second removal is subsequently performed to remove remnant silicon nitride hard mask with a second phosphoric acid solution. The first removal and the second removal are performed in-situ. A temperature of the second phosphoric acid solution is lower than a temperature of the first phosphoric acid solution.

Abstract translation: 一种除去氮化硅材料的方法包括以下步骤。 提供了至少形成有栅极结构的衬底，并且在栅极结构的顶部上形成至少一个氮化硅硬掩模。 执行第一次去除以用第一磷酸（H 3 PO 4）溶液去除一部分氮化硅硬掩模。 随后进行第二次去除以用第二种磷酸溶液去除残留的氮化硅硬掩模。 第一次去除和第二次去除是原位进行的。 第二磷酸溶液的温度低于第一磷酸溶液的温度。

公开(公告)号：US08999793B2

公开(公告)日：2015-04-07

申请号：US14306250

申请日：2014-06-17

Applicant: United Microelectronics Corp.

Inventor： Chin-I Liao ,  Chia-Lin Hsu ,  Ming-Yen Li ,  Yung-Lun Hsieh ,  Chien-Hao Chen ,  Bo-Syuan Lee

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/10

CPC classification number: H01L29/66795 ,  H01L29/1054 ,  H01L29/66484 ,  H01L29/785

Abstract: A Multi-Gate Field-Effect Transistor includes a fin-shaped structure, a gate structure, at least an epitaxial structure and a gradient cap layer. The fin-shaped structure is located on a substrate. The gate structure is disposed across a part of the fin-shaped structure and the substrate. The epitaxial structure is located on the fin-shaped structure beside the gate structure. The gradient cap layer is located on each of the epitaxial structures. The gradient cap layer is a compound semiconductor, and the concentration of one of the ingredients of the compound semiconductor has a gradient distribution decreasing from inner to outer. Moreover, the present invention also provides a Multi-Gate Field-Effect Transistor process forming said Multi-Gate Field-Effect Transistor.

Abstract translation: 多栅极场效应晶体管包括鳍状结构，栅极结构，至少外延结构和梯度盖层。 鳍状结构位于基板上。 栅极结构设置在鳍状结构和衬底的一部分上。 外延结构位于栅极结构旁边的鳍状结构上。 梯度盖层位于每个外延结构上。 梯度盖层是化合物半导体，化合物半导体的成分之一的浓度具有从内向外减小的梯度分布。 此外，本发明还提供一种形成所述多栅极场效应晶体管的多栅极场效应晶体管工艺。

公开(公告)号：US20140295634A1

公开(公告)日：2014-10-02

申请号：US14306250

申请日：2014-06-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chin-I Liao ,  Chia-Lin Hsu ,  Ming-Yen Li ,  Yung-Lun Hsieh ,  Chien-Hao Chen ,  Bo-Syuan Lee

IPC: H01L29/66

CPC classification number: H01L29/66795 ,  H01L29/1054 ,  H01L29/66484 ,  H01L29/785

Abstract: A Multi-Gate Field-Effect Transistor includes a fin-shaped structure, a gate structure, at least an epitaxial structure and a gradient cap layer. The fin-shaped structure is located on a substrate. The gate structure is disposed across a part of the fin-shaped structure and the substrate. The epitaxial structure is located on the fin-shaped structure beside the gate structure. The gradient cap layer is located on each of the epitaxial structures. The gradient cap layer is a compound semiconductor, and the concentration of one of the ingredients of the compound semiconductor has a gradient distribution decreasing from inner to outer. Moreover, the present invention also provides a Multi-Gate Field-Effect Transistor process forming said Multi-Gate Field-Effect Transistor.

Abstract translation: 多栅极场效应晶体管包括鳍状结构，栅极结构，至少外延结构和梯度盖层。 鳍状结构位于基板上。 栅极结构设置在鳍状结构和衬底的一部分上。 外延结构位于栅极结构旁边的鳍状结构上。 梯度盖层位于每个外延结构上。 梯度盖层是化合物半导体，化合物半导体的成分之一的浓度具有从内向外减小的梯度分布。 此外，本发明还提供一种形成所述多栅极场效应晶体管的多栅极场效应晶体管工艺。

公开(公告)号：US20140256151A1

公开(公告)日：2014-09-11

申请号：US13784846

申请日：2013-03-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chi-Sheng Chen ,  Shin-Chi Chen ,  Chih-Yueh Li ,  Ted Ming-Lang Guo ,  Bo-Syuan Lee ,  Tsung-Hsun Tsai ,  Yu-Chin Cheng

IPC: H01L21/308

CPC classification number: H01L21/308 ,  H01L21/31111 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659

Abstract: A method for removing silicon nitride material includes following steps. A substrate having at least a gate structure formed thereon is provided, and at least a silicon nitride hard mask is formed on top of the gate structure. A first removal is performed to remove a portion of the silicon nitride hard mask with a first phosphoric acid (H3PO4) solution. A second removal is subsequently performed to remove remnant silicon nitride hard mask with a second phosphoric acid solution. The first removal and the second removal are performed in-situ. A temperature of the second phosphoric acid solution is lower than a temperature of the first phosphoric acid solution.

Abstract translation: 一种除去氮化硅材料的方法包括以下步骤。 提供了至少形成有栅极结构的衬底，并且在栅极结构的顶部上形成至少一个氮化硅硬掩模。 执行第一次去除以用第一磷酸（H 3 PO 4）溶液去除一部分氮化硅硬掩模。 随后进行第二次去除以用第二种磷酸溶液去除残留的氮化硅硬掩模。 第一次去除和第二次去除是原位进行的。 第二磷酸溶液的温度低于第一磷酸溶液的温度。