公开(公告)号：US08883033B2

公开(公告)日：2014-11-11

申请号：US13784846

申请日：2013-03-05

Applicant: United Microelectronics Corp.

Inventor： Chi-Sheng Chen ,  Shin-Chi Chen ,  Chih-Yueh Li ,  Ted Ming-Lang Guo ,  Bo-Syuan Lee ,  Tsung-Hsun Tsai ,  Yu-Chin Cheng

IPC: B44C1/22 ,  H01L21/302 ,  H01L21/308

CPC classification number: H01L21/308 ,  H01L21/31111 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659

Abstract: A method for removing silicon nitride material includes following steps. A substrate having at least a gate structure formed thereon is provided, and at least a silicon nitride hard mask is formed on top of the gate structure. A first removal is performed to remove a portion of the silicon nitride hard mask with a first phosphoric acid (H3PO4) solution. A second removal is subsequently performed to remove remnant silicon nitride hard mask with a second phosphoric acid solution. The first removal and the second removal are performed in-situ. A temperature of the second phosphoric acid solution is lower than a temperature of the first phosphoric acid solution.

Abstract translation: 一种除去氮化硅材料的方法包括以下步骤。 提供了至少形成有栅极结构的衬底，并且在栅极结构的顶部上形成至少一个氮化硅硬掩模。 执行第一次去除以用第一磷酸（H 3 PO 4）溶液去除一部分氮化硅硬掩模。 随后进行第二次去除以用第二种磷酸溶液去除残留的氮化硅硬掩模。 第一次去除和第二次去除是原位进行的。 第二磷酸溶液的温度低于第一磷酸溶液的温度。

公开(公告)号：US20140256151A1

公开(公告)日：2014-09-11

申请号：US13784846

申请日：2013-03-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chi-Sheng Chen ,  Shin-Chi Chen ,  Chih-Yueh Li ,  Ted Ming-Lang Guo ,  Bo-Syuan Lee ,  Tsung-Hsun Tsai ,  Yu-Chin Cheng

IPC: H01L21/308

CPC classification number: H01L21/308 ,  H01L21/31111 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659

Abstract: A method for removing silicon nitride material includes following steps. A substrate having at least a gate structure formed thereon is provided, and at least a silicon nitride hard mask is formed on top of the gate structure. A first removal is performed to remove a portion of the silicon nitride hard mask with a first phosphoric acid (H3PO4) solution. A second removal is subsequently performed to remove remnant silicon nitride hard mask with a second phosphoric acid solution. The first removal and the second removal are performed in-situ. A temperature of the second phosphoric acid solution is lower than a temperature of the first phosphoric acid solution.

Abstract translation: 一种除去氮化硅材料的方法包括以下步骤。 提供了至少形成有栅极结构的衬底，并且在栅极结构的顶部上形成至少一个氮化硅硬掩模。 执行第一次去除以用第一磷酸（H 3 PO 4）溶液去除一部分氮化硅硬掩模。 随后进行第二次去除以用第二种磷酸溶液去除残留的氮化硅硬掩模。 第一次去除和第二次去除是原位进行的。 第二磷酸溶液的温度低于第一磷酸溶液的温度。