公开(公告)号：US20120208476A1

公开(公告)日：2012-08-16

申请号：US13451850

申请日：2012-04-20

Applicant: Tomonori Tanoue ,  Hidetoshi Matsumoto

Inventor： Tomonori Tanoue ,  Hidetoshi Matsumoto

IPC: H04B1/04 ,  H04B1/034

CPC classification number: H03G3/3042 ,  H03F1/0261 ,  H03F3/191 ,  H03F3/24 ,  H03F2200/105 ,  H03F2200/207 ,  H03F2200/294 ,  H03F2200/372 ,  H03F2200/471 ,  H03F2200/99

Abstract: A high frequency power amplifier maintains an excellent linearity regardless of a fluctuation of a load impedance and is downsized. The high frequency power amplifier detects an AC voltage amplitude at an output terminal of a final amplification stage transistor, and suppresses an input signal amplitude of a power amplifier when the voltage amplitude exceeds a predetermined threshold value.

Abstract translation: 无论负载阻抗的波动如何，高频功率放大器保持良好的线性度，并且小型化。 高频功率放大器检测最终放大级晶体管的输出端的交流电压振幅，并且当电压振幅超过预定阈值时，抑制功率放大器的输入信号振幅。

公开(公告)号：US20060081879A1

公开(公告)日：2006-04-20

申请号：US11247234

申请日：2005-10-12

Applicant: Kenichi Tanaka ,  Hidetoshi Matsumoto ,  Isao Ohbu ,  Kazuhiro Mochizuki ,  Tomonori Tanoue ,  Chisaki Takubo ,  Hiroyuki Uchiyama

Inventor： Kenichi Tanaka ,  Hidetoshi Matsumoto ,  Isao Ohbu ,  Kazuhiro Mochizuki ,  Tomonori Tanoue ,  Chisaki Takubo ,  Hiroyuki Uchiyama

IPC: H01L31/109

CPC classification number: H01L23/482 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/16152 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: The present invention provides a semiconductor device which comprises active components, passive components, wiring lines and electrodes and are satisfactory in terms of mechanical strength, miniaturization and thermal stability. In the semiconductor device, openings are formed just below active components. These openings are filled with conductor layers. Conductor layers are also formed where openings are not formed.

Abstract translation: 本发明提供一种半导体器件，其包括有源部件，无源部件，布线和电极，并且在机械强度，小型化和热稳定性方面令人满意。 在半导体器件中，开口形成在活性部件的正下方。 这些开口填充有导体层。 还形成了未形成开口的导体层。

公开(公告)号：US06943387B2

公开(公告)日：2005-09-13

申请号：US10409455

申请日：2003-04-09

Applicant: Isao Ohbu ,  Tomonori Tanoue ,  Chushiro Kusano ,  Yasunari Umemoto ,  Atsushi Kurokawa ,  Kazuhiro Mochizuki ,  Masami Ohnishi ,  Hidetoshi Matsumoto

Inventor： Isao Ohbu ,  Tomonori Tanoue ,  Chushiro Kusano ,  Yasunari Umemoto ,  Atsushi Kurokawa ,  Kazuhiro Mochizuki ,  Masami Ohnishi ,  Hidetoshi Matsumoto

IPC: H01L21/331 ,  H01L29/06 ,  H01L29/423 ,  H01L29/737 ,  H03F1/30 ,  H03F3/19 ,  H01L31/072

CPC classification number: H01L29/66318 ,  H01L29/0692 ,  H01L29/42304 ,  H01L29/7371 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/16152 ,  H03F1/302 ,  H03F3/19 ,  H03F2203/21178

Abstract: In a semiconductor device using an emitter top heterojunction bipolar transistor having a planar shape in a ring-like shape, a structure is provided in which a base electrode is present only on an inner side of a ring-like emitter-base junction region. This allows reduction of base/collector junction capacitance per unit emitter area, whereby a semiconductor device having high power adding efficiency and high power gain suitable for a power amplifier can be realized. Further, in a multistage power amplifier including first and second amplifier circuits each having one or more of bipolar transistors, a bipolar transistor in the first amplifier circuit uses an emitter having a planar shape in a rectangular shape, and a bipolar transistor in the second amplifier circuit uses an emitter having a ring-like shape and a base electrode only on the inner side of the emitter.

Abstract translation: 在使用具有环状形状的发射极顶面异质结双极晶体管的半导体器件中，提供了仅在环状发射极 - 基极结区域的内侧存在基极的结构。 这允许减小每单位发射极面积的基极/集电极结电容，由此可以实现具有高功率增加效率和适用于功率放大器的高功率增益的半导体器件。 此外，在包括具有一个或多个双极晶体管的第一和第二放大器电路的多级功率放大器中，第一放大器电路中的双极晶体管使用具有矩形形状的平面形状的发射极和第二放大器中的双极晶体管 电路仅在发射体的内侧使用具有环状形状的发射体和基极。

公开(公告)号：US06822517B2

公开(公告)日：2004-11-23

申请号：US10753484

申请日：2004-01-09

Applicant: Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Satoshi Tanaka ,  Kiichi Yamashita

Inventor： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Satoshi Tanaka ,  Kiichi Yamashita

IPC: H03F368

CPC classification number: H03F1/56 ,  H03F1/0222 ,  H03F1/0261 ,  H03F1/0266 ,  H03F1/301 ,  H03F1/302 ,  H03F1/306 ,  H03F3/19 ,  H03F3/1935 ,  H03F2200/318 ,  H03F2200/453

Abstract: A power amplifier module comprises a plurality of amplifier stages, each including a reference amplifier for emulating the operation of the amplifier. The current flowing to the base of a bipolar transistor that forms each reference amplifier depending on an input power level is detected, amplified, and supplied as base current of the transistor of the corresponding amplifier.

公开(公告)号：US08306490B2

公开(公告)日：2012-11-06

申请号：US13451850

申请日：2012-04-20

Applicant: Tomonori Tanoue ,  Hidetoshi Matsumoto

Inventor： Tomonori Tanoue ,  Hidetoshi Matsumoto

IPC: H01Q11/12

CPC classification number: H03G3/3042 ,  H03F1/0261 ,  H03F3/191 ,  H03F3/24 ,  H03F2200/105 ,  H03F2200/207 ,  H03F2200/294 ,  H03F2200/372 ,  H03F2200/471 ,  H03F2200/99

Abstract: A high frequency power amplifier maintains an excellent linearity regardless of a fluctuation of a load impedance and is downsized. The high frequency power amplifier detects an AC voltage amplitude at an output terminal of a final amplification stage transistor, and suppresses an input signal amplitude of a power amplifier when the voltage amplitude exceeds a predetermined threshold value.

Abstract translation: 无论负载阻抗的波动如何，高频功率放大器保持良好的线性度，并且小型化。 高频功率放大器检测最终放大级晶体管的输出端的交流电压振幅，并且当电压振幅超过预定阈值时，抑制功率放大器的输入信号振幅。

公开(公告)号：US07408405B2

公开(公告)日：2008-08-05

申请号：US11182859

申请日：2005-07-18

Applicant: Masami Ohnishi ,  Tomonori Tanoue ,  Hidetoshi Matsumoto

Inventor： Masami Ohnishi ,  Tomonori Tanoue ,  Hidetoshi Matsumoto

IPC: H03F1/14 ,  H03F3/191

CPC classification number: H03F1/0277 ,  H03F3/191 ,  H03F3/72 ,  H03F2203/7206

Abstract: For use in an amplifier configuration including a high-power amplifier and a low-power amplifier which are always interconnected in terms of high frequencies and between which switching is made using no switches, a highly stable high-frequency power amplifier module with high isolation between the amplifiers is provided. To reduce wrapping around from a low-power amplifier section in an activated state to a high-power amplifier section in a deactivated state or from the high-power amplifier section in an activated state to the low-power amplifier section in a deactivated state, an input matching circuit having high isolation characteristics is included in an input matching circuit portion which does not have much to do with amplifier efficiency. Switching of each of the amplifier sections between an activated state and a deactivated state is effected by control using bias input terminals.

Abstract translation: 为了在包括大功率放大器和低功率放大器的放大器配置中使用，该功率放大器和低功率放大器总是在高频率下互连，并且在不使用开关的情况下进行开关之间，高稳定的高频功率放大器模块之间具有高隔离度 提供放大器。 为了将处于激活状态的低功率放大器部分的周围环绕到处于去激活状态的高功率放大器部分或者处于激活状态的高功率放大器部分到处于去激活状态的低功率放大器部分， 具有高隔离特性的输入匹配电路包括在与放大器效率无关的输入匹配电路部分中。 每个放大器部分在激活状态和去激活状态之间的切换通过使用偏置输入端的控制来实现。

公开(公告)号：US07368988B2

公开(公告)日：2008-05-06

申请号：US11489609

申请日：2006-07-20

Applicant: Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Isao Ohbu

Inventor： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Isao Ohbu

IPC: H03G5/16

CPC classification number: H03G3/3042 ,  H03F1/30 ,  H03F3/189 ,  H03F3/68 ,  H03G3/3047

Abstract: In a base-bias-control-type high-frequency power amplifier with a plural stage configuration, a rising voltage of a base bias current supplied to an initial stage transistor is made lower than a rising voltage of a base bias current supplied to a second stage transistor by a bias circuit, and a difference between the both voltages is set to be smaller than a base-emitter voltage of an amplifying stage transistor. Also, a rising voltage of a base bias current supplied to a third stage transistor is made equal to the rising voltage of the base bias current supplied to an initial stage transistor. Accordingly, a technology capable of improving the power control linearity can be provided in a high-frequency power amplifier used in a polar-loop transmitter or the like.

Abstract translation: 在具有多级配置的基极偏置控制型高频功率放大器中，使提供给初级级晶体管的基极偏置电流的上升电压低于提供给第二级的基极偏置电流的上升电压 并且两个电压之间的差被设置为小于放大级晶体管的基极 - 发射极电压。 此外，使提供给第三级晶体管的基极偏置电流的上升电压等于提供给初级晶体管的基极偏置电流的上升电压。 因此，能够提高功率控制线性度的技术能够在用于极环回路发送机等的高频功率放大器中提供。

公开(公告)号：US07102427B2

公开(公告)日：2006-09-05

申请号：US10922146

申请日：2004-08-20

Applicant: Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Masami Ohnishi

Inventor： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Masami Ohnishi

IPC: H03F3/38 ,  H03G3/20

CPC classification number: H03F1/0227 ,  H03F2200/432

Abstract: An amplifier using a wide band, high efficiency, and low distortion amplifier free from clipping distortion, and a high efficiency and low distortion radio frequency power amplifier, using that amplifier, which can be applied to wide band wireless communication systems are provided. The amplifier has a DC—DC converter 2, augmented with a low pass filter 4, for amplifying the low frequency components of an input signal from a terminal 5, and a class B amplifier, augmented with a high pass filter, for amplifying the input signal and supplying its high frequency components after amplification. The DC—DC converter and the class B amplifier are connected in parallel, and the power supply voltage of the class B amplifier is controlled with the low frequency components of the input signal.

Abstract translation: 提供了一种使用宽带，高效率和低失真放大器的放大器，无限幅失真，以及高效率和低失真射频功率放大器，使用该放大器，可应用于宽带无线通信系统。 放大器具有DC-DC转换器2，增强了低通滤波器4，用于放大来自端子5的输入信号的低频分量，以及增加了高通滤波器的B类放大器，用于放大输入 信号并在放大后提供其高频分量。 DC-DC转换器和B类放大器并联，B类放大器的电源电压由输入信号的低频分量控制。

公开(公告)号：US20060138458A1

公开(公告)日：2006-06-29

申请号：US11316908

申请日：2005-12-27

Applicant: Kenichi Tanaka ,  Tomonori Tanoue ,  Hidetoshi Matsumoto ,  Hiroshi Ohta ,  Kazuhiro Mochizuki ,  Hiroyuki Uchiyama

Inventor： Kenichi Tanaka ,  Tomonori Tanoue ,  Hidetoshi Matsumoto ,  Hiroshi Ohta ,  Kazuhiro Mochizuki ,  Hiroyuki Uchiyama

IPC: H01L31/109

CPC classification number: H01L29/7371 ,  H01L29/66318

Abstract: This invention is intended to provide an HBT capable of achieving, if the HBT is a collector-up HBT, the constriction of the emitter layer disposed directly under an external base layer, and reduction in base-emitter junction capacity, or if the HBT is an emitter-up HBT, reduction in base-collector junction capacity. For the collector-up HBT, window structures around the sidewalls of a collector are used to etch either the emitter layer disposed directly under the external base layer, or an emitter contact layer For the emitter-up HBT, window structures around the sidewalls of an emitter are used to etch either the collector layer disposed directly under the external base layer, or a collector contact layer. In both HBTs, the external base layer is supported by a columnar structure to ensure mechanical strength.

Abstract translation: 本发明旨在提供一种如果HBT是集电极HBT，则可以实现直接位于外部基极层下方的发射极层的收缩，以及基极 - 发射极结能量的降低，或HBT为 发射极HBT，基极 - 集电极结电容降低。 对于收集器HBT，围绕集电极侧壁的窗口结构用于蚀刻直接位于外部基极层下方的发射极层或发射极接触层。对于发射极上升HBT，围绕侧壁的窗口结构 发射极用于蚀刻直接位于外部基底层下方的集电极层或集电极接触层。 在两个HBT中，外部基层由柱状结构支撑以确保机械强度。

公开(公告)号：US07015761B2

公开(公告)日：2006-03-21

申请号：US10975431

申请日：2004-10-29

Applicant: Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Satoshi Tanaka ,  Kiichi Yamashita

Inventor： Hidetoshi Matsumoto ,  Tomonori Tanoue ,  Satoshi Tanaka ,  Kiichi Yamashita

IPC: H03F3/68 ,  H03G3/20

CPC classification number: H03F1/56 ,  H03F1/0222 ,  H03F1/0261 ,  H03F1/0266 ,  H03F1/301 ,  H03F1/302 ,  H03F1/306 ,  H03F3/19 ,  H03F3/1935 ,  H03F2200/318 ,  H03F2200/453

Abstract: A CDMA system is provided which includes a power amplifier module have a DC current amplifier. The DC and current amplifier detects a DC component of an input signal and amplifies this detected DC component. The power amplifier module also includes an amplifier which receives the current amplified by the DC current amplifier as an input current. The input signal supplied to the DC current amplifier changes in response to an input power level.

Abstract translation: 提供了一种CDMA系统，其包括具有DC电流放大器的功率放大器模块。 直流和电流放大器检测输入信号的直流分量，并放大该检测到的直流分量。 功率放大器模块还包括放大器，其接收由直流电流放大器放大的电流作为输入电流。 提供给DC电流放大器的输入信号响应于输入功率电平而改变。