公开(公告)号：US09966304B2

公开(公告)日：2018-05-08

申请号：US15263249

申请日：2016-09-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Hung Lin ,  Ching-Fu Yeh ,  Hsin-Chen Tsai ,  Yao-Hsiang Liang ,  Yu-Min Chang ,  Shih-Chi Lin

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76846 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53228 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An improved interconnect structure and a method for forming the interconnect structure is disclosed that allows the interconnect structure to achieve a lower Rc. To lower the Rc of the interconnect structure, an α-phase inducing metal layer is introduced on a first Ta barrier layer of β phase to induce the subsequent deposition of Ta thereon into the formation of an α-phase Ta barrier layer. The subsequently deposited Ta barrier layer with a primary crystallographic structure of α phase has a lower Rc than that of the β-phase Ta barrier layer.

公开(公告)号：US11839907B2

公开(公告)日：2023-12-12

申请号：US16542014

申请日：2019-08-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Ling Pai ,  Yu-Min Chang

IPC: H01L21/02 ,  B08B7/04 ,  B08B3/08 ,  B08B5/02 ,  B08B7/02 ,  B08B3/04 ,  B08B1/00

CPC classification number: B08B7/04 ,  B08B3/041 ,  B08B3/08 ,  B08B5/023 ,  B08B7/028 ,  H01L21/02052 ,  B08B1/005

Abstract: A method of cleaning wafer-cleaning brushes includes passing a wafer having a first polished main side and an opposing unpolished backside between a pair of substantially cylindrical shaped wafer-cleaning brushes are rotated about an axial direction of the brushes while passing the wafer between the pair of wafer-cleaning brushes. A cleaning solution is applied to the brushes while passing the wafer between the pair of wafer-cleaning brushes. While passing between the pair of brushes, the first polished main side of the wafer faces a first direction, the first direction is an opposite direction to which a polished side of a production wafer faces during a subsequent polished wafer cleaning operation. The substantially cylindrical shaped wafer-cleaning brushes include a plurality of protrusions on an external surface of the brushes, and the brushes contact the wafer at least a portion of time the wafer is passing between the pair of brushes.

公开(公告)号：US09196718B2

公开(公告)日：2015-11-24

申请号：US13771109

申请日：2013-02-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Liang-Chen Chi ,  Chia-Ming Tsai ,  Yu-Min Chang ,  Chin-Kun Wang ,  Miin-Jang Chen ,  Li-Tien Huang

IPC: H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51

CPC classification number: H01L29/78 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor substructure with improved performance and a method of forming the same is described. The semiconductor substructure includes a dielectric film over a substrate, the dielectric film including at least one metal dielectric layer, at least one oxygen-donor layer, and at least one nitride-incorporation layer.

Abstract translation: 描述了具有改进性能的半导体子结构及其形成方法。 所述半导体子结构包括在衬底上的电介质膜，所述电介质膜包括至少一个金属介电层，至少一个氧供体层和至少一个氮化物掺入层。

公开(公告)号：US20140231931A1

公开(公告)日：2014-08-21

申请号：US13771109

申请日：2013-02-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Liang-Chen Chi ,  Chia-Ming Tsai ,  Yu-Min Chang ,  Chin-Kun Wang ,  Miin-Jang Chen ,  Li-Tien Huang

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/02

CPC classification number: H01L29/78 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor substructure with improved performance and a method of forming the same is described. The semiconductor substructure includes a dielectric film over a substrate, the dielectric film including at least one metal dielectric layer, at least one oxygen-donor layer, and at least one nitride-incorporation layer.

Abstract translation: 描述了具有改进性能的半导体子结构及其形成方法。 所述半导体子结构包括在衬底上的电介质膜，所述电介质膜包括至少一个金属介电层，至少一个氧供体层和至少一个氮化物掺入层。

公开(公告)号：US20200055100A1

公开(公告)日：2020-02-20

申请号：US16542014

申请日：2019-08-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Ling Pai ,  Yu-Min Chang

IPC: B08B7/04 ,  B08B3/08 ,  B08B5/02 ,  B08B3/04 ,  B08B7/02 ,  H01L21/02

Abstract: A method of cleaning wafer-cleaning brushes includes passing a wafer having a first polished main side and an opposing unpolished backside between a pair of substantially cylindrical shaped wafer-cleaning brushes are rotated about an axial direction of the brushes while passing the wafer between the pair of wafer-cleaning brushes. A cleaning solution is applied to the brushes while passing the wafer between the pair of wafer-cleaning brushes. While passing between the pair of brushes, the first polished main side of the wafer faces a first direction, the first direction is an opposite direction to which a polished side of a production wafer faces during a subsequent polished wafer cleaning operation. The substantially cylindrical shaped wafer-cleaning brushes include a plurality of protrusions on an external surface of the brushes, and the brushes contact the wafer at least a portion of time the wafer is passing between the pair of brushes.

公开(公告)号：US20150001720A1

公开(公告)日：2015-01-01

申请号：US13929341

申请日：2013-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., LTD.

Inventor： Yu-Hung Lin ,  Ching-Fu Yeh ,  Hsin-Chen Tsai ,  Yao-Hsiang Liang ,  Yu-Min Chang ,  Shih-Chi Lin

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L21/76846 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53228 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An improved interconnect structure and a method for forming the interconnect structure is disclosed that allows the interconnect structure to achieve a lower Rc. To lower the Rc of the interconnect structure, an α-phase inducing metal layer is introduced on a first Ta barrier layer of β phase to induce the subsequent deposition of Ta thereon into the formation of an α-phase Ta barrier layer. The subsequently deposited Ta barrier layer with a primary crystallographic structure of α phase has a lower Rc than that of the β-phase Ta barrier layer.

Abstract translation: 公开了改进的互连结构和用于形成互连结构的方法，其允许互连结构实现较低的Rc。 为了降低互连结构的Rc，将α相诱导金属层引入到第一Ta阻挡层上。 以诱导其后的Ta沉积到α相Ta势垒层的形成中。 具有α相的主结晶结构的随后沉积的Ta阻挡层具有比第二相Ta层阻挡层低的Rc。