公开(公告)号：US09966304B2

公开(公告)日：2018-05-08

申请号：US15263249

申请日：2016-09-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Hung Lin ,  Ching-Fu Yeh ,  Hsin-Chen Tsai ,  Yao-Hsiang Liang ,  Yu-Min Chang ,  Shih-Chi Lin

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L21/76846 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53228 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An improved interconnect structure and a method for forming the interconnect structure is disclosed that allows the interconnect structure to achieve a lower Rc. To lower the Rc of the interconnect structure, an α-phase inducing metal layer is introduced on a first Ta barrier layer of β phase to induce the subsequent deposition of Ta thereon into the formation of an α-phase Ta barrier layer. The subsequently deposited Ta barrier layer with a primary crystallographic structure of α phase has a lower Rc than that of the β-phase Ta barrier layer.

公开(公告)号：US20150001720A1

公开(公告)日：2015-01-01

申请号：US13929341

申请日：2013-06-27

Applicant: Taiwan Semiconductor Manufacturing Co., LTD.

Inventor： Yu-Hung Lin ,  Ching-Fu Yeh ,  Hsin-Chen Tsai ,  Yao-Hsiang Liang ,  Yu-Min Chang ,  Shih-Chi Lin

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L21/76846 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53228 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An improved interconnect structure and a method for forming the interconnect structure is disclosed that allows the interconnect structure to achieve a lower Rc. To lower the Rc of the interconnect structure, an α-phase inducing metal layer is introduced on a first Ta barrier layer of β phase to induce the subsequent deposition of Ta thereon into the formation of an α-phase Ta barrier layer. The subsequently deposited Ta barrier layer with a primary crystallographic structure of α phase has a lower Rc than that of the β-phase Ta barrier layer.

Abstract translation: 公开了改进的互连结构和用于形成互连结构的方法，其允许互连结构实现较低的Rc。 为了降低互连结构的Rc，将α相诱导金属层引入到第一Ta阻挡层上。 以诱导其后的Ta沉积到α相Ta势垒层的形成中。 具有α相的主结晶结构的随后沉积的Ta阻挡层具有比第二相Ta层阻挡层低的Rc。