公开(公告)号：US20030121764A1

公开(公告)日：2003-07-03

申请号：US10032698

申请日：2001-12-27

Applicant: The Regents of the University of California

Inventor： Peidong Yang ,  Hannes Kind ,  Haoquan Yan ,  Matthew Law ,  Benjamin Messer

IPC: H01H001/02 ,  G02B006/26 ,  G02B006/35

CPC classification number: G11C13/025 ,  B82Y10/00 ,  G11C13/04 ,  G11C2213/16 ,  Y10S977/932

Abstract: A nanowire switching device and method. The device has a nanowire structure comprising an elongated member having a cross-sectional area ranging from about 1 nanometers but less than about 500 nanometers, but can also be at other dimensions, which vary or are substantially constant or any combination of these. The device also has a first terminal coupled to a first portion of the nanowire structure; and a second terminal coupled to a second portion of the nanowire structure. The second portion of the nanowire structure is disposed spatially from the first portion of the nanowire structure. An active surface structure is coupled to the nanowire structure. The active surface structure extends from the first portion to the second portion along the elongated member.

Abstract translation: 纳米线切换装置及方法。 该装置具有纳米线结构，该纳米线结构包括具有约1纳米但小于约500纳米的横截面积的细长构件，但是也可以在其它尺寸上变化或基本上恒定，或者这些的任何组合。 该器件还具有耦合到纳米线结构的第一部分的第一端子; 以及耦合到所述纳米线结构的第二部分的第二端子。 纳米线结构的第二部分从纳米线结构的第一部分空间上放置。 有源表面结构耦合到纳米线结构。 主动表面结构沿着细长构件从第一部分延伸到第二部分。

公开(公告)号：US20020175408A1

公开(公告)日：2002-11-28

申请号：US10112578

申请日：2002-03-29

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Arun Majumdar ,  Ali Shakouri ,  Timothy D. Sands ,  Peidong Yang ,  Samuel S. Mao ,  Richard E. Russo ,  Henning Feick ,  Eicke R. Weber ,  Hannes Kind ,  Michael Huang ,  Haoquan Yan ,  Yiying Wu ,  Rong Fan

IPC: H01L023/48

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y20/00 ,  G02B6/107 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02554 ,  H01L21/02603 ,  H01L21/02645 ,  H01L21/02653 ,  H01L24/45 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/12 ,  H01L29/125 ,  H01L31/0352 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24 ,  H01L35/00 ,  H01L41/094 ,  H01L41/18 ,  H01L41/183 ,  H01L2224/45565 ,  H01L2224/45599 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01058 ,  H01L2924/0106 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01084 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01S5/341 ,  H01S5/3412 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764 ,  Y10S977/765 ,  Y10S977/951 ,  Y10T428/24994 ,  Y10T428/249949 ,  Y10T428/29 ,  Y10T428/2913 ,  Y10T428/2916 ,  Y10T428/292 ,  Y10T428/2933 ,  Y10T428/2958 ,  Y10T428/2973 ,  Y10T428/298 ,  H01L2924/00011 ,  H01L2924/00 ,  H01L2224/48

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as nullnanowiresnull, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract translation: 具有小于约200nm的均匀直径的一维纳米结构。 这些本发明的纳米结构，我们称之为“纳米线”，包括具有不同化学成分的至少两种单晶材料的单晶均匀结构以及异质结构。 由于使用单晶材料来形成异质结构，所以得到的异质结构也将是单晶的。 纳米线异质结构通常基于半导体线，其中掺杂和组成在纵向或径向方向上或在两个方向上被控制，以产生包括不同材料的导线。 所得纳米线异质结构的实例包括纵向异质结构纳米线（LOHN）和同轴异质结构纳米线（COHN）。

公开(公告)号：US20020172820A1

公开(公告)日：2002-11-21

申请号：US10112698

申请日：2002-03-29

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Arun Majumdar ,  Ali Shakouri ,  Timothy D. Sands ,  Peidong Yang ,  Samuel S. Mao ,  Richard E. Russo ,  Henning Feick ,  Eicke R. Weber ,  Hannes Kind ,  Michael Huang ,  Haoquan Yan ,  Yiying Wu ,  Rong Fan

IPC: B32B019/00 ,  H01S003/30 ,  H01S005/00 ,  C30B023/00 ,  D02G003/00 ,  C30B025/00 ,  C30B028/14

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y20/00 ,  G02B6/107 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02554 ,  H01L21/02603 ,  H01L21/02645 ,  H01L21/02653 ,  H01L24/45 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/12 ,  H01L29/125 ,  H01L31/0352 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24 ,  H01L35/00 ,  H01L41/094 ,  H01L41/18 ,  H01L41/183 ,  H01L2224/45565 ,  H01L2224/45599 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01058 ,  H01L2924/0106 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01084 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01S5/341 ,  H01S5/3412 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764 ,  Y10S977/765 ,  Y10S977/951 ,  Y10T428/24994 ,  Y10T428/249949 ,  Y10T428/29 ,  Y10T428/2913 ,  Y10T428/2916 ,  Y10T428/292 ,  Y10T428/2933 ,  Y10T428/2958 ,  Y10T428/2973 ,  Y10T428/298 ,  H01L2924/00011 ,  H01L2924/00 ,  H01L2224/48

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as nullnanowiresnull, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).