公开(公告)号：US20220181466A1

公开(公告)日：2022-06-09

申请号：US17110811

申请日：2020-12-03

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Nicholas Stephen Dellas ,  Dong Seup Lee ,  Andinet Tefera Desalegn

IPC: H01L29/66 ,  H01L29/778 ,  H01L21/02 ,  H01L29/205 ,  H01L29/207 ,  H01L29/06

Abstract: In a described example, an integrated circuit (IC) is disclosed that includes a transistor. The transistor includes a substrate, and a buffer structure overlying the substrate. The buffer structure has a first buffer layer, a second buffer layer overlying the first buffer layer, and a third buffer layer overlying the second buffer layer. The first buffer layer has a first carbon concentration, the second buffer layer has a second carbon concentration lower than the first carbon concentration, and the third buffer layer has a third carbon concentration higher than the second carbon concentration. An active structure overlies the buffer structure.

公开(公告)号：US20160325987A1

公开(公告)日：2016-11-10

申请号：US14706941

申请日：2015-05-07

Applicant: Texas Instruments Incorporated

Inventor： Nicholas Stephen Dellas

IPC: B81C1/00 ,  H01L29/66 ,  H01L21/02 ,  B81B3/00 ,  H01L21/324

CPC classification number: H01L29/408 ,  B81B3/0072 ,  B81B2203/0118 ,  B81C1/00666 ,  B81C2201/0167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/3245 ,  H01L21/823864 ,  H01L23/291 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/778 ,  H01L29/7787

Abstract: A microelectronic device contains a high performance silicon nitride layer which is stoichiometric within 2 atomic percent, has a low stress of 600 MPa to 1000 MPa, and has a low hydrogen content, less than 5 atomic percent, formed by an LPCVD process. The LPCVD process uses ammonia and dichlorosilane gases in a ratio of 4 to 6, at a pressure of 150 millitorr to 250 millitorr, and at a temperature of 800° C. to 820° C.

Abstract translation: 微电子器件含有化学计量在2原子％以内的高性能氮化硅层，其具有600MPa至1000MPa的低应力，并且通过LPCVD工艺形成的氢含量低于5原子％。 LPCVD方法使用氨和二氯硅烷气体的比例为4至6，压力为150毫托至250毫托，温度为800℃至820℃。

公开(公告)号：US20230068191A1

公开(公告)日：2023-03-02

申请号：US18048167

申请日：2022-10-20

Applicant: Texas Instruments Incorporated

Inventor： Nicholas Stephen Dellas ,  Dong Seup Lee ,  Andinet Tefera Desalegn

IPC: H01L29/66 ,  H01L29/778 ,  H01L21/02 ,  H01L29/205 ,  H01L29/207 ,  H01L29/06

Abstract: In a described example, an integrated circuit (IC) is disclosed that includes a transistor. The transistor includes a substrate, and a buffer structure overlying the substrate. The buffer structure has a first buffer layer, a second buffer layer overlying the first buffer layer, and a third buffer layer overlying the second buffer layer. The first buffer layer has a first carbon concentration, the second buffer layer has a second carbon concentration lower than the first carbon concentration, and the third buffer layer has a third carbon concentration higher than the second carbon concentration. An active structure overlies the buffer structure.

公开(公告)号：US10026817B2

公开(公告)日：2018-07-17

申请号：US15409970

申请日：2017-01-19

Applicant: Texas Instruments Incorporated

Inventor： Nicholas Stephen Dellas

IPC: H01L29/66 ,  H01L29/40 ,  H01L29/778 ,  H01L29/20 ,  H01L29/205

Abstract: A microelectronic device contains a high performance silicon nitride layer which is stoichiometric within 2 atomic percent, has a low stress of 600 MPa to 1000 MPa, and has a low hydrogen content, less than 5 atomic percent, formed by an LPCVD process. The LPCVD process uses ammonia and dichlorosilane gases in a ratio of 4 to 6, at a pressure of 150 millitorr to 250 millitorr, and at a temperature of 800° C. to 820° C.

公开(公告)号：US20170133472A1

公开(公告)日：2017-05-11

申请号：US15409970

申请日：2017-01-19

Applicant: Texas Instruments Incorporated

Inventor： Nicholas Stephen Dellas

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778

CPC classification number: H01L29/408 ,  B81B3/0072 ,  B81B2203/0118 ,  B81C1/00666 ,  B81C2201/0167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/3245 ,  H01L21/823864 ,  H01L23/291 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/778 ,  H01L29/7787

Abstract: A microelectronic device contains a high performance silicon nitride layer which is stoichiometric within 2 atomic percent, has a low stress of 600 MPa to 1000 MPa, and has a low hydrogen content, less than 5 atomic percent, formed by an LPCVD process. The LPCVD process uses ammonia and dichlorosilane gases in a ratio of 4 to 6, at a pressure of 150 millitorr to 250 millitorr, and at a temperature of 800° C. to 820° C.

公开(公告)号：US12170328B2

公开(公告)日：2024-12-17

申请号：US17121992

申请日：2020-12-15

Applicant: Texas Instruments Incorporated

Inventor： Tatsuya Tominari ,  Nicholas Stephen Dellas ,  Qhalid Fareed

IPC: H01L29/778 ,  H01L29/04 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

Abstract: A semiconductor device includes a GaN FET on a silicon substrate and a buffer layer of III-N semiconductor material, with a columnar region, a transition region surrounding the columnar region, and an inter-columnar region around the transition region. The columnar region is higher than the inter-columnar region. The GaN FET includes a gate of III-N semiconductor material with a thickness greater than twice the vertical range of the top surface of the buffer layer in the columnar region. A difference between the gate thickness over the columnar region and over the transition region is less than half of the vertical range of the top surface of the buffer layer in the columnar surface. The semiconductor device may be formed by forming a gate layer of III-N semiconductor material over the barrier layer by a gate MOVPE process using a carrier gas that includes zero to 40 percent hydrogen gas.

公开(公告)号：US09640620B2

公开(公告)日：2017-05-02

申请号：US14531575

申请日：2014-11-03

Applicant: Texas Instruments Incorporated

Inventor： Nicholas Stephen Dellas

IPC: H01L29/20 ,  H01L29/40 ,  H01L21/28 ,  H01L23/29 ,  H01L29/51 ,  H01L29/778 ,  H01L29/10

CPC classification number: H01L29/7786 ,  H01L21/28264 ,  H01L23/291 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/401 ,  H01L29/513 ,  H01L29/7781

Abstract: A method of fabricating a gate stack for a power transistor device includes thermally oxidizing a surface of a Group IIIA-N layer on a substrate to form a first dielectric layer of an oxide material that is >5A thick. A second dielectric layer being silicon nitride or silicon oxynitride is deposited on the first dielectric layer. A metal gate electrode is formed on the second dielectric layer.

公开(公告)号：US09580304B2

公开(公告)日：2017-02-28

申请号：US14706941

申请日：2015-05-07

Applicant: Texas Instruments Incorporated

Inventor： Nicholas Stephen Dellas

IPC: H01L29/15 ,  B81C1/00 ,  B81B3/00 ,  H01L21/324 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/408 ,  B81B3/0072 ,  B81B2203/0118 ,  B81C1/00666 ,  B81C2201/0167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/3245 ,  H01L21/823864 ,  H01L23/291 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/778 ,  H01L29/7787

Abstract: A microelectronic device contains a high performance silicon nitride layer which is stoichiometric within 2 atomic percent, has a low stress of 600 MPa to 1000 MPa, and has a low hydrogen content, less than 5 atomic percent, formed by an LPCVD process. The LPCVD process uses ammonia and dichlorosilane gases in a ratio of 4 to 6, at a pressure of 150 millitorr to 250 millitorr, and at a temperature of 800° C. to 820° C.

Abstract translation: 微电子器件含有化学计量在2原子％以内的高性能氮化硅层，其具有600MPa至1000MPa的低应力，并且通过LPCVD工艺形成的氢含量低于5原子％。 LPCVD方法使用氨和二氯硅烷气体的比例为4至6，压力为150毫托至250毫托，温度为800℃至820℃。

公开(公告)号：US20250063756A1

公开(公告)日：2025-02-20

申请号：US18938715

申请日：2024-11-06

Applicant: Texas Instruments Incorporated

Inventor： Tatsuya Tominari ,  Nicholas Stephen Dellas ,  Qhalid Fareed

IPC: H01L29/778 ,  H01L29/04 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

Abstract: A semiconductor device includes a GaN FET on a silicon substrate and a buffer layer of III-N semiconductor material, with a columnar region, a transition region surrounding the columnar region, and an inter-columnar region around the transition region. The columnar region is higher than the inter-columnar region. The GaN FET includes a gate of III-N semiconductor material with a thickness greater than twice the vertical range of the top surface of the buffer layer in the columnar region. A difference between the gate thickness over the columnar region and over the transition region is less than half of the vertical range of the top surface of the buffer layer in the columnar surface. The semiconductor device may be formed by forming a gate layer of III-N semiconductor material over the barrier layer by a gate MOVPE process using a carrier gas that includes zero to 40 percent hydrogen gas.

公开(公告)号：US11508830B2

公开(公告)日：2022-11-22

申请号：US17110811

申请日：2020-12-03

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Nicholas Stephen Dellas ,  Dong Seup Lee ,  Andinet Tefera Desalegn

IPC: H01L29/66 ,  H01L29/778 ,  H01L21/02 ,  H01L29/205 ,  H01L29/207 ,  H01L29/06 ,  H01L29/20

Abstract: In a described example, an integrated circuit (IC) is disclosed that includes a transistor. The transistor includes a substrate, and a buffer structure overlying the substrate. The buffer structure has a first buffer layer, a second buffer layer overlying the first buffer layer, and a third buffer layer overlying the second buffer layer. The first buffer layer has a first carbon concentration, the second buffer layer has a second carbon concentration lower than the first carbon concentration, and the third buffer layer has a third carbon concentration higher than the second carbon concentration. An active structure overlies the buffer structure.