Invention Grant
- Patent Title: P type gallium nitride conformal epitaxial structure over thick buffer layer
-
Application No.: US17121992Application Date: 2020-12-15
-
Publication No.: US12170328B2Publication Date: 2024-12-17
- Inventor: Tatsuya Tominari , Nicholas Stephen Dellas , Qhalid Fareed
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Yudong Kim; Frank D. Cimino
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/04 ; H01L29/20 ; H01L29/205 ; H01L29/66
Abstract:
A semiconductor device includes a GaN FET on a silicon substrate and a buffer layer of III-N semiconductor material, with a columnar region, a transition region surrounding the columnar region, and an inter-columnar region around the transition region. The columnar region is higher than the inter-columnar region. The GaN FET includes a gate of III-N semiconductor material with a thickness greater than twice the vertical range of the top surface of the buffer layer in the columnar region. A difference between the gate thickness over the columnar region and over the transition region is less than half of the vertical range of the top surface of the buffer layer in the columnar surface. The semiconductor device may be formed by forming a gate layer of III-N semiconductor material over the barrier layer by a gate MOVPE process using a carrier gas that includes zero to 40 percent hydrogen gas.
Public/Granted literature
- US20220190148A1 P TYPE GALLIUM NITRIDE CONFORMAL EPITAXIAL STRUCTURE OVER THICK BUFFER LAYER Public/Granted day:2022-06-16
Information query
IPC分类:
