公开(公告)号：US09476141B2

公开(公告)日：2016-10-25

申请号：US14341584

申请日：2014-07-25

Applicant: SunEdison, Inc.

Inventor： Tirumani Swaminathan

IPC: C30B15/12 ,  C30B15/02 ,  C30B29/06

CPC classification number: C30B15/12 ,  C30B15/02 ,  C30B29/06 ,  Y10T117/1052 ,  Y10T117/1064

Abstract: A system for growing a crystal ingot from a melt is provided. The system includes a first crucible, a barrier, and a shield. The first crucible has a first base and a first sidewall forming a first cavity for containing the melt. The barrier is disposed within the first cavity of the first crucible to inhibit movement of the melt from outward of the barrier to inward of the barrier. The barrier extends from the first base to above the melt. The barrier has an inner arm and an outer arm extending upward to form a channel therebetween. The shield extends downward between the inner arm and the outer arm to inhibit passage of contaminants.

Abstract translation: 提供了用于从熔体生长晶锭的系统。 该系统包括第一坩埚，屏障和屏蔽。 第一坩埚具有形成用于容纳熔体的第一腔的第一基底和第一侧壁。 屏障设置在第一坩埚的第一腔内，以阻止熔体从屏障的外部移动到屏障的内侧。 阻挡层从第一基底延伸到熔体之上。 屏障具有向上延伸的内臂和外臂，以在它们之间形成通道。 护罩在内臂和外臂之间向下延伸以阻止污染物通过。

公开(公告)号：US20160024685A1

公开(公告)日：2016-01-28

申请号：US14341580

申请日：2014-07-25

Applicant: SunEdison, Inc.

Inventor： Tirumani Swaminathan

IPC: C30B15/14 ,  C30B15/12 ,  C30B29/06 ,  C30B15/00

CPC classification number: C30B15/14 ,  C30B15/002 ,  C30B15/12 ,  C30B15/206 ,  C30B29/06 ,  Y10T117/1052 ,  Y10T117/1068

Abstract: A system for growing a crystal ingot from a melt is provided. The system includes a crucible assembly, a first heater, a second heater, and a passive heater. The crucible assembly includes a crucible and a weir separating an outer melt zone of the melt from an inner melt zone of the melt. The first heater is configured to supply thermal energy to the melt by conduction through the crucible. The second heater is configured to generate thermal radiation. The passive heater is configured to supply thermal energy to the outer melt zone by transferring thermal radiation generated by the second heater to the outer melt zone.

Abstract translation: 提供了用于从熔体生长晶锭的系统。 该系统包括坩埚组件，第一加热器，第二加热器和无源加热器。 坩埚组件包括坩埚和将熔体的外部熔体区域与熔体的内部熔融区域分开的堰。 第一加热器构造成通过坩埚传导来向熔体提供热能。 第二加热器被配置成产生热辐射。 被动加热器被配置为通过将由第二加热器产生的热辐射传递到外部熔融区域而将热能提供给外部熔融区域。

公开(公告)号：US10358740B2

公开(公告)日：2019-07-23

申请号：US14341580

申请日：2014-07-25

Applicant: SunEdison, Inc.

Inventor： Tirumani Swaminathan

IPC: C30B15/12 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06 ,  C30B15/00

Abstract: A system for growing a crystal ingot from a melt is provided. The system includes a crucible assembly, a first heater, a second heater, and a passive heater. The crucible assembly includes a crucible and a weir separating an outer melt zone of the melt from an inner melt zone of the melt. The first heater is configured to supply thermal energy to the melt by conduction through the crucible. The second heater is configured to generate thermal radiation. The passive heater is configured to supply thermal energy to the outer melt zone by transferring thermal radiation generated by the second heater to the outer melt zone.

公开(公告)号：US20160024686A1

公开(公告)日：2016-01-28

申请号：US14341589

申请日：2014-07-25

Applicant: SunEdison, Inc.

Inventor： Tirumani Swaminathan ,  Harold Korb

IPC: C30B15/22 ,  C30B29/06

CPC classification number: C30B15/22 ,  C30B15/02 ,  C30B15/12 ,  C30B15/20 ,  C30B29/06

Abstract: A method for growing a crystal ingot from a melt in a crystal growing system is provided. The system includes a crucible and a barrier disposed within the crucible. The method includes identifying a Peclet number (Pe) with an advective transport rate that is less than a diffusive transport rate, calculating a cross-sectional area of a passage to be formed in the barrier based on the identified Peclet number to allow outward diffusion of impurities through the passage during growth of the crystal ingot, and growing the crystal ingot using the barrier having the passage formed therein.

Abstract translation: 提供了一种在晶体生长系统中从熔体生长晶锭的方法。 该系统包括设置在坩埚内的坩埚和屏障。 该方法包括以小于扩散传输速率的平流传输速率来识别佩佩莱数（Pe），基于所识别的佩佩克数来计算要在屏障中形成的通道的横截面积，以允许向外扩散 通过晶体生长期间的通道产生杂质，并且使用其中形成通道的阻挡层生长晶锭。

公开(公告)号：US20160024684A1

公开(公告)日：2016-01-28

申请号：US14341584

申请日：2014-07-25

Applicant: SunEdison, Inc.

Inventor： Tirumani Swaminathan

IPC: C30B15/12

CPC classification number: C30B15/12 ,  C30B15/02 ,  C30B29/06 ,  Y10T117/1052 ,  Y10T117/1064

Abstract: A system for growing a crystal ingot from a melt is provided. The system includes a first crucible, a barrier, and a shield. The first crucible has a first base and a first sidewall forming a first cavity for containing the melt. The barrier is disposed within the first cavity of the first crucible to inhibit movement of the melt from outward of the barrier to inward of the barrier. The barrier extends from the first base to above the melt. The barrier has an inner arm and an outer arm extending upward to form a channel therebetween. The shield extends downward between the inner arm and the outer arm to inhibit passage of contaminants.

Abstract translation: 提供了用于从熔体生长晶锭的系统。 该系统包括第一坩埚，屏障和屏蔽。 第一坩埚具有形成用于容纳熔体的第一腔的第一基底和第一侧壁。 屏障设置在第一坩埚的第一腔内，以阻止熔体从屏障的外部移动到屏障的内侧。 阻挡层从第一基底延伸到熔体之上。 屏障具有向上延伸的内臂和外臂，以在它们之间形成通道。 护罩在内臂和外臂之间向下延伸以阻止污染物通过。