公开(公告)号：US20230357957A1

公开(公告)日：2023-11-09

申请号：US17780702

申请日：2020-11-10

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Kyoko OKITA ,  Tsubasa HONKE ,  Shunsaku UETA

IPC: C30B29/36 ,  H01L29/16 ,  H01L29/34 ,  H01L21/306 ,  C30B33/10 ,  C01B32/956

CPC classification number: C30B29/36 ,  H01L29/1608 ,  H01L29/34 ,  H01L21/30625 ,  C30B33/10 ,  C01B32/956 ,  C01P2006/80

Abstract: A silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The silicon carbide substrate includes screw dislocations and pits having a maximum diameter of 1 μm or more and 10 μm or less in a direction parallel to the first main surface. When the screw dislocations and the pits are observed in the first main surface, a percentage obtained by dividing a number of the pits by a number of the screw dislocations is 1% or less. A concentration of magnesium in the first main surface is less than 1×1011 atoms/cm2.

公开(公告)号：US20140315373A1

公开(公告)日：2014-10-23

申请号：US14219061

申请日：2014-03-19

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Kyoko OKITA

IPC: H01L21/02

CPC classification number: H01L21/02041 ,  H01L21/02013 ,  H01L21/02024 ,  H01L21/02049

Abstract: A method for manufacturing a silicon carbide substrate 10 has the following steps. A silicon carbide single crystal substrate 1 having a first main surface 1a and a second main surface 1b opposite to the first main surface 1a is prepared. The first main surface 1a is subjected to chemical mechanical polishing. The first main surface 1a is cleaned with an acid containing sulfuric acid. After the step of cleaning with an acid containing sulfuric acid, the first main surface 1a is cleaned with an alkali containing ammonia. Thus, a method for manufacturing a silicon carbide substrate capable of achieving lowered surface roughness of an epitaxial layer can be provided.

Abstract translation: 制造碳化硅衬底10的方法具有以下步骤。 制备具有与第一主表面1a相对的第一主表面1a和第二主表面1b的碳化硅单晶衬底1。 对第一主表面1a进行化学机械抛光。 第一主表面1a用含硫酸清洗。 在用含硫酸的清洗步骤之后，用含氨的氨清洗第一主表面1a。 因此，可以提供一种能够实现降低外延层表面粗糙度的碳化硅衬底的制造方法。

公开(公告)号：US20240234509A9

公开(公告)日：2024-07-11

申请号：US18278421

申请日：2021-11-24

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Kyoko OKITA ,  Tsubasa HONKE ,  Shunsaku UETA

IPC: H01L29/16 ,  H01L21/306

CPC classification number: H01L29/1608 ,  H01L21/30625

Abstract: A silicon carbide substrate includes a first main surface, a second main surface, a threading screw dislocation, and a blind scratch. The second main surface is located opposite to the first main surface. The threading screw dislocation extends to each of the first main surface and the second main surface. The blind scratch is exposed at the first main surface and extends linearly as viewed in a direction perpendicular to the first main surface. A value obtained by dividing an area density of the blind scratch by an area density of threading screw dislocation is smaller than 0.13.

公开(公告)号：US20210060818A1

公开(公告)日：2021-03-04

申请号：US16078089

申请日：2017-01-26

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Naoki MATSUMOTO ,  Kyoko OKITA

IPC: B28D5/04 ,  H01L21/02 ,  C30B25/20 ,  C30B25/18 ,  C30B29/36

Abstract: A silicon carbide ingot is cut using a wire. The silicon carbide ingot has a polytype of 4H—SiC. The silicon carbide ingot includes a top surface, a bottom surface opposite to the top surface, and a side surface between the.top surface and the bottom surface. A direction from the bottom surface toward the top surface is a direction parallel to a [0001] direction or a direction inclined by less than or equal to 8° relative to the [0001] direction. In the cutting of the silicon carbide ingot, the silicon carbide ingot is cut from the side surface at a (000-1) plane side along a straight line parallel to a direction within ±5° relative to a direction that bisects an angle formed by a [1-100] direction and a [11-20] direction when viewed in the direction from the bottom surface toward the top surface.

公开(公告)号：US20150010726A1

公开(公告)日：2015-01-08

申请号：US14284527

申请日：2014-05-22

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Tsubasa HONKE ,  Kyoko OKITA ,  Tomohiro KAWASE ,  Tsutomu HORI

IPC: C30B23/00 ,  C30B29/36

CPC classification number: H01L29/1608 ,  C30B23/00 ,  C30B23/002 ,  C30B23/025 ,  C30B23/066 ,  C30B29/36 ,  H01L29/045 ,  Y10T428/21

Abstract: Quality of a silicon carbide single crystal is improved. A crucible having first and second sides is prepared. A solid source material for growing silicon carbide with a sublimation method is arranged on the first side. A seed crystal made of silicon carbide is arranged on the second side. The crucible is arranged in a heat insulating container. The heat insulating container has an opening facing the second side. The crucible is heated such that the solid source material sublimes. A temperature on the second side is measured through the opening in the heat insulating container. The opening has a tapered inner surface narrowed toward the outside of the heat insulating container.

Abstract translation: 改善了碳化硅单晶的质量。 制备具有第一和第二面的坩埚。 在第一面上设置用于生长碳化硅的升华方法的固体源材料。 由碳化硅制成的籽晶布置在第二面上。 坩埚布置在隔热容器中。 隔热容器具有面向第二面的开口。 将坩埚加热使得固体源材料升华。 通过隔热容器的开口测量第二面的温度。 该开口具有朝向绝热容器的外侧变窄的锥形内表面。

公开(公告)号：US20140138709A1

公开(公告)日：2014-05-22

申请号：US14163209

申请日：2014-01-24

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Makoto SASAKI ,  Shin HARADA ,  Kyoko OKITA ,  Tomihito MIYAZAKI

IPC: H01L29/16

CPC classification number: H01L29/1608 ,  C30B29/36 ,  C30B33/00 ,  H01L29/24

Abstract: A first circular surface (11) is provided with a first notch portion (N1a) having a first shape. A second circular surface (21) is opposite to the first circular surface and is provided with a second notch portion (N2a) having a second shape. A side surface (31) connects the first circular surface (11) and the second circular surface (21) to each other. The first notch portion (N1a) and the second notch portion (N2a) are opposite to each other. The side surface (31) has a first depression (Da) connecting the first notch portion (N1a) and the second notch portion (N2a) to each other.

Abstract translation: 第一圆形表面（11）设置有具有第一形状的第一切口部分（N1a）。 第二圆形表面（21）与第一圆形表面相对，并且设置有具有第二形状的第二切口部分（N2a）。 侧表面（31）将第一圆形表面（11）和第二圆形表面（21）彼此连接。 第一切口部（N1a）和第二切口部（N2a）彼此相对。 侧面（31）具有将第一切口部（N1a）和第二切口部（N2a）彼此连接的第一凹部（Da）。

公开(公告)号：US20220220638A1

公开(公告)日：2022-07-14

申请号：US17611139

申请日：2020-04-01

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Kyoko OKITA ,  Tsubasa HONKE

IPC: C30B29/36 ,  H01L21/02 ,  H01L29/16 ,  H01L29/36

Abstract: A silicon carbide substrate in accordance with the present disclosure includes a main surface. The silicon carbide substrate has a maximum diameter of 150 mm or more. In the main surface, a total area of a region in which a concentration of each of sodium, aluminum, potassium, calcium, titanium, iron, copper, and zinc is less than 5×1010 atoms/cm2 is more than or equal to 95% of an area of the main surface.

公开(公告)号：US20200083039A1

公开(公告)日：2020-03-12

申请号：US16614016

申请日：2018-04-03

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Tsubasa HONKE ,  Kyoko OKITA

IPC: H01L21/02 ,  C30B29/36 ,  H01L21/304

Abstract: A TTV of the silicon carbide substrate is less than or equal to 3 μm. The first main surface includes a first central region surrounded by a square having each side of 90 mm. An intersection of diagonal lines of the first central region coincides with a center of the first main surface. The first central region is constituted of nine square regions each having each side of 30 mm. A maximum LTV among the nine square regions is less than or equal to 1 μm. An arithmetic mean roughness Sa in a second central region is less than or equal to 0.1 nm, the second central region being surrounded by a square centering on the intersection and having each side of 250 μm.

公开(公告)号：US20180274129A1

公开(公告)日：2018-09-27

申请号：US15989373

申请日：2018-05-25

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Tsubasa HONKE ,  Kyoko OKITA

IPC: C30B33/12 ,  C09K3/14 ,  C09G1/02 ,  C01B32/956 ,  B24B37/04 ,  B08B3/08 ,  C30B29/36 ,  H01L21/02 ,  H01L21/306 ,  H01L29/04 ,  H01L29/16 ,  C30B33/10

CPC classification number: C30B33/12 ,  B08B3/08 ,  B24B37/00 ,  B24B37/044 ,  C01B32/956 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  C30B29/36 ,  C30B33/10 ,  H01L21/02024 ,  H01L21/02052 ,  H01L21/30625 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/34 ,  H01L29/78 ,  H01L29/861

Abstract: A silicon carbide substrate is composed of silicon carbide, and when a main surface thereof is etched with chlorine gas, the overall length of linear etch-pit groups observed in the main surface is equal to or less than the diameter of the substrate.

公开(公告)号：US20160229086A1

公开(公告)日：2016-08-11

申请号：US15098918

申请日：2016-04-14

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Kyoko OKITA

IPC: B28D5/04 ,  C30B33/00 ,  C30B29/36

CPC classification number: B28D5/045 ,  B28D5/04 ,  C30B29/36 ,  C30B33/00 ,  C30B33/06 ,  Y10T83/04

Abstract: A method of manufacturing a silicon carbide substrate includes the steps of preparing an ingot of single crystal silicon carbide and obtaining a substrate by cutting the ingot. Then, in the step of obtaining a substrate, cutting proceeds in a direction α in which an angle β formed with respect to a direction or a direction of the ingot is 15°±5° in an orthogonal projection on a {0001} plane.

Abstract translation: 制造碳化硅衬底的方法包括制备单晶碳化硅锭并通过切割锭获得衬底的步骤。 然后，在获得基板的步骤中，在相对于锭的<11-20>方向或<1-100>方向形成的角度β为15°±5°的方向α上进行切割 {0001}平面上的正交投影。