公开(公告)号：US10103152B2

公开(公告)日：2018-10-16

申请号：US15634066

申请日：2017-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hoon Kim ,  Eun Tae Kim ,  Seong Hun Park ,  Youn Jae Cho ,  Hee Sook Park ,  Woong Hee Sohn ,  Jin Ho Oh

IPC: H01L27/108 ,  H01L21/8242 ,  H01L29/423

Abstract: A Semiconductor device and method for fabricating the same are provided. The method includes forming a trench in a substrate, forming a lower gate metal using a first gas, the lower gate metal burying at least a portion of the trench, forming a barrier metal on the lower gate metal, on the barrier metal, forming an upper gate metal using a second gas different from the first gas and forming a capping film on the gate metal, the capping film filling the trench.

公开(公告)号：US12016175B2

公开(公告)日：2024-06-18

申请号：US18226891

申请日：2023-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Young Lee ,  Do Hyung Kim ,  Taek Jung Kim ,  Seung Jong Park ,  Jae Wha Park ,  Youn Jae Cho

IPC: H10B12/00 ,  H01L23/528 ,  H01L23/532 ,  H10N50/01 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80

CPC classification number: H10B12/315 ,  H01L23/528 ,  H01L23/53266 ,  H10B12/34 ,  H10B61/22 ,  H10N50/01 ,  H10N50/10 ,  H10N50/80

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate including an element isolation film and an active region defined by the element isolation film; a word line crossing the active region in a first direction; and a bit line structure on the substrate and connected to the active region, the bit line structure extending in a second direction crossing the first direction, wherein the bit line structure includes a first cell interconnection film including an amorphous material or ruthenium, a second cell interconnection film on and extending along the first cell interconnection film and including ruthenium, and a cell capping film on and extending along the second cell interconnection film.

公开(公告)号：US11723189B2

公开(公告)日：2023-08-08

申请号：US17372880

申请日：2021-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Young Lee ,  Do Hyung Kim ,  Taek Jung Kim ,  Seung Jong Park ,  Jae Wha Park ,  Youn Jae Cho

IPC: H10B12/00 ,  H01L23/528 ,  H01L23/532 ,  H10N50/01 ,  H10N50/80

CPC classification number: H10B12/315 ,  H01L23/528 ,  H01L23/53266 ,  H10B12/34 ,  H10N50/01 ,  H10N50/80

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate including an element isolation film and an active region defined by the element isolation film; a word line crossing the active region in a first direction; and a bit line structure on the substrate and connected to the active region, the bit line structure extending in a second direction crossing the first direction, wherein the bit line structure includes a first cell interconnection film including an amorphous material or ruthenium, a second cell interconnection film on and extending along the first cell interconnection film and including ruthenium, and a cell capping film on and extending along the second cell interconnection film.