公开(公告)号：US10103152B2

公开(公告)日：2018-10-16

申请号：US15634066

申请日：2017-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hoon Kim ,  Eun Tae Kim ,  Seong Hun Park ,  Youn Jae Cho ,  Hee Sook Park ,  Woong Hee Sohn ,  Jin Ho Oh

IPC: H01L27/108 ,  H01L21/8242 ,  H01L29/423

Abstract: A Semiconductor device and method for fabricating the same are provided. The method includes forming a trench in a substrate, forming a lower gate metal using a first gas, the lower gate metal burying at least a portion of the trench, forming a barrier metal on the lower gate metal, on the barrier metal, forming an upper gate metal using a second gas different from the first gas and forming a capping film on the gate metal, the capping film filling the trench.