公开(公告)号：US10402620B2

公开(公告)日：2019-09-03

申请号：US15981311

申请日：2018-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byung Ho Kim ,  Da Hee Kim ,  Joon Sung Kim ,  Joo Young Choi ,  Hee Sook Park ,  Tae Wook Kim

IPC: G06K9/00 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/053 ,  H01L23/055 ,  H01L23/498 ,  H01L23/522 ,  H01L23/528 ,  H01L23/538

Abstract: A fan-out semiconductor package includes: a core member including a support layer, a first wiring layer, a second wiring layer, and through-vias and having a through-hole; a semiconductor chip disposed in the through-hole; an encapsulant covering the core member and the semiconductor chip and filling at least portions of the through-hole; a connection member including an insulating layer disposed on the first wiring layer and the semiconductor chip, a redistribution layer disposed on the insulating layer, first vias electrically connecting the redistribution layer and the connection pads to each other, and second vias electrically connecting the redistribution layer and the first wiring layer to each other; and a passivation layer disposed on the insulating layer and covering the redistribution layer, wherein a thickness of the passivation layer is within half a distance from an inactive surface of the semiconductor chip to a lower surface of the encapsulant.

公开(公告)号：US10103152B2

公开(公告)日：2018-10-16

申请号：US15634066

申请日：2017-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hoon Kim ,  Eun Tae Kim ,  Seong Hun Park ,  Youn Jae Cho ,  Hee Sook Park ,  Woong Hee Sohn ,  Jin Ho Oh

IPC: H01L27/108 ,  H01L21/8242 ,  H01L29/423

Abstract: A Semiconductor device and method for fabricating the same are provided. The method includes forming a trench in a substrate, forming a lower gate metal using a first gas, the lower gate metal burying at least a portion of the trench, forming a barrier metal on the lower gate metal, on the barrier metal, forming an upper gate metal using a second gas different from the first gas and forming a capping film on the gate metal, the capping film filling the trench.