公开(公告)号：US20160126096A1

公开(公告)日：2016-05-05

申请号：US14994120

申请日：2016-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Ho KANG ,  Bong-Jin KUH ,  Yong-Kyu JOO ,  Sung-Ho HEO ,  Hee-Seok KIM ,  Yong-Sung PARK

IPC: H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/02636 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/3065 ,  H01L21/67109

Abstract: In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

Abstract translation: 在形成外延层的方法中，蚀刻气体可能被分解以形成分解的蚀刻气体。 源气体可能被分解形成分解的源气体。 分解的源气体可以施加到衬底上以在衬底上形成外延层。 可以使用分解的蚀刻气体蚀刻在衬底的特定区域上的外延层的一部分。 在蚀刻气体被引入反应室之前，蚀刻气体可以预先分解。 然后将分解的蚀刻气体引入反应室以蚀刻衬底上的外延层。 结果，衬底上的外延层可以具有均匀的分布。

公开(公告)号：US20130213910A1

公开(公告)日：2013-08-22

申请号：US13671989

申请日：2012-11-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Ho KANG ,  Bong-Jin KUH ,  Ki-Seok KIM ,  Ki-Chul KIM ,  Ik-Soo KIM ,  Yong-Kyu JOO ,  Sang-Cheol HA

IPC: H01L21/683

CPC classification number: H01L21/683 ,  H01L21/67303 ,  H01L21/67309

Abstract: Provided is a boat for loading semiconductor substrates that includes a top plate and a bottom plate separated from each other, a rod extending from the bottom plate to the top plate and disposed between the top plate and the bottom plate, a plurality of buffer plates disposed between the top plate and the bottom plate and separated from each other by a first distance along a lengthwise direction of the rod, and a support provided between a first buffer plate and a second buffer plate which neighbor each other and supporting a loaded semiconductor substrate.

Abstract translation: 提供一种用于装载半导体基板的船，其包括彼此分离的顶板和底板，从底板延伸到顶板并设置在顶板和底板之间的杆，设置有多个缓冲板 在顶板和底板之间并且沿着杆的长度方向彼此分开第一距离，以及设置在彼此相邻并支撑加载的半导体衬底的第一缓冲板和第二缓冲板之间的支撑件。

公开(公告)号：US20140193967A1

公开(公告)日：2014-07-10

申请号：US14152191

申请日：2014-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Ho KANG ,  Bong-Jin KUH ,  Yong-Kyu JOO ,  Sung-Ho HEO ,  Hee-Seok KIM ,  Yong-Sung PARK

IPC: H01L21/02

CPC classification number: H01L21/02636 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/3065 ,  H01L21/67109

Abstract: In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

Abstract translation: 在形成外延层的方法中，蚀刻气体可能被分解以形成分解的蚀刻气体。 源气体可能被分解形成分解的源气体。 分解的源气体可以施加到衬底上以在衬底上形成外延层。 可以使用分解的蚀刻气体蚀刻在衬底的特定区域上的外延层的一部分。 在蚀刻气体被引入反应室之前，蚀刻气体可以预先分解。 然后将分解的蚀刻气体引入反应室以蚀刻衬底上的外延层。 结果，衬底上的外延层可以具有均匀的分布。