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    SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING A FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权

    公开(公告)号：US20230059169A1

    公开(公告)日：2023-02-23

    申请号：US17718795

    申请日：2022-04-12

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jinbum Kim ,  Dongmyoung Kim ,  Cheol Kim ,  Dongsuk Shin ,  Woogwan Shim ,  Seung Hun Lee ,  Soonwook Jung

    IPC: H01L29/10 ,  H01L29/08 ,  H01L29/66 ,  H01L21/8234

    Abstract: A semiconductor device includes: an active pattern disposed on a substrate; a source/drain pattern disposed on the active pattern; a channel pattern connected to the source/drain pattern, wherein the channel pattern includes semiconductor patterns stacked on each other and spaced apart from each other; and a gate electrode disposed on the channel pattern and extending in a first direction, wherein the gate electrode includes: a channel neighboring part adjacent to a first sidewall of a first semiconductor pattern of the stacked semiconductor patterns; and a body part spaced apart from the first semiconductor pattern, wherein the channel neighboring part is disposed between the body part and the first semiconductor pattern, wherein the first sidewall of the first semiconductor pattern has a first width, wherein the channel neighboring part has a second width less than the first width. The body part has a third width greater than the second width.

    Semiconductor device and method of fabricating the same
    3.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US09496381B2

    公开(公告)日：2016-11-15

    申请号：US13716402

    申请日：2012-12-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Mongsup Lee ,  Yoonho Son ,  Woogwan Shim ,  Chan Min Lee ,  Inseak Hwang

    IPC: H01L29/78 ,  H01L27/108

    CPC classification number: H01L29/78 ,  H01L27/10876 ,  H01L27/10885 ,  H01L27/10888

    Abstract: A semiconductor device may include a substrate including an active pattern delimited by a device isolation pattern, a gate electrode crossing the active pattern, a first impurity region and a second impurity region in the active pattern on both sides of the gate electrode, a bit line crossing the gate electrode, a first contact electrically connecting the first impurity region with the bit line, and a first nitride pattern on a lower side surface of the first contact. A width of the first contact measured perpendicular to an extending direction of the bit line may be substantially equal to that of the bit line.

    Abstract translation: 半导体器件可以包括：衬底，其包括由器件隔离图案限定的有源图案，与有源图案交叉的栅极电极，栅电极两侧的有源图案中的第一杂质区域和第二杂质区域，位线 跨越栅电极，将第一杂质区与位线电连接的第一接触和第一接触的下侧表面上的第一氮化物图案。 垂直于位线的延伸方向测量的第一接触件的宽度可以基本上等于位线的宽度。

    SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME 审中-公开
    半导体器件及其形成方法

    公开(公告)号：US20140124854A1

    公开(公告)日：2014-05-08

    申请号：US14154740

    申请日：2014-01-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Heedon Hwang ,  Ji-Young Min ,  Jongchul Park ,  Insang Jeon ,  Woogwan Shim

    IPC: H01L29/78 ,  H01L29/66

    CPC classification number: H01L29/7827 ,  H01L27/10876 ,  H01L27/228 ,  H01L27/2436 ,  H01L29/66666 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/146

    Abstract: Semiconductor devices and methods of forming the same may be provided. The semiconductor devices may include a trench in a substrate. The semiconductor devices may also include a bulk electrode within opposing sidewalls of the trench. The semiconductor devices may further include a liner electrode between the bulk electrode and the opposing sidewalls of the trench. The liner electrode may include a sidewall portion between a sidewall of the bulk electrode and one of the opposing sidewalls of the trench.

    Abstract translation: 可以提供半导体器件及其形成方法。 半导体器件可以在衬底中包括沟槽。 半导体器件还可以包括在沟槽的相对侧壁内的体电极。 半导体器件还可以包括在本体电极和沟槽的相对侧壁之间的衬垫电极。 衬里电极可以包括在本体电极的侧壁和沟槽的相对侧壁中的一个之间的侧壁部分。

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