公开(公告)号：US11545489B2

公开(公告)日：2023-01-03

申请号：US17180989

申请日：2021-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junggun You ,  Sungil Park ,  Joohee Jung ,  Sunggi Hur

IPC: H01L27/088 ,  H01L21/8234 ,  H01L21/762 ,  H01L21/768 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device includes a substrate including first and second active regions extending in a first direction and isolated from direct contact with each other in the first direction; a device isolation layer between the first and second active regions in the substrate; and first and second gate structures extending in a second direction on the substrate while respectively intersecting end portions of the first and second active regions. The first gate structure includes a first gate electrode. The second gate structure includes a second gate electrode. The first gate structure protrudes further toward the device isolation layer, as compared to the second gate structure, in a vertical direction that is perpendicular to the first and second directions, and a lower end of the first gate electrode is located on a lower height level than a lower end of the second gate electrode.

公开(公告)号：US11387367B2

公开(公告)日：2022-07-12

申请号：US17034421

申请日：2020-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woocheol Shin ,  Sunggi Hur ,  Sangwon Baek ,  Junghan Lee

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L21/02 ,  H01L29/66

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are stacked in a vertical direction. Each channel extends in a first direction. The gate structure extends in a second direction. The gate structure covers the channels. The source/drain layer is connected to each of opposite sidewalls in the first direction of the channels on the substrate, and includes a doped semiconductor material. The source/drain layer includes first and second epitaxial layers having first and second impurity concentrations, respectively. The first epitaxial layer covers a lower surface and opposite sidewalls in the first direction of the second epitaxial layer. A portion of each of opposite sidewalls in the first direction of the gate structure protrudes in the first direction from opposite sidewalls in the first direction of the channels to partially penetrate through the first epitaxial layer but not to contact the second epitaxial layer.

公开(公告)号：US11955556B2

公开(公告)日：2024-04-09

申请号：US17836416

申请日：2022-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woocheol Shin ,  Sunggi Hur ,  Sangwon Baek ,  Junghan Lee

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/78618 ,  H01L21/02236 ,  H01L21/02532 ,  H01L21/02603 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66742 ,  H01L29/78696

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are stacked in a vertical direction. Each channel extends in a first direction. The gate structure extends in a second direction. The gate structure covers the channels. The source/drain layer is connected to each of opposite sidewalls in the first direction of the channels on the substrate, and includes a doped semiconductor material. The source/drain layer includes first and second epitaxial layers having first and second impurity concentrations, respectively. The first epitaxial layer covers a lower surface and opposite sidewalls in the first direction of the second epitaxial layer. A portion of each of opposite sidewalls in the first direction of the gate structure protrudes in the first direction from opposite sidewalls in the first direction of the channels to partially penetrate through the first epitaxial layer but not to contact the second epitaxial layer.

公开(公告)号：US20230139447A1

公开(公告)日：2023-05-04

申请号：US18148233

申请日：2022-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junggun YOU ,  Sungil Park ,  Joohee Jung ,  Sunggi Hur

IPC: H01L27/088 ,  H01L21/8234

Abstract: A semiconductor device includes a substrate including first and second active regions extending in a first direction and isolated from direct contact with each other in the first direction; a device isolation layer between the first and second active regions in the substrate; and first and second gate structures extending in a second direction on the substrate while respectively intersecting end portions of the first and second active regions. The first gate structure includes a first gate electrode. The second gate structure includes a second gate electrode. The first gate structure protrudes further toward the device isolation layer, as compared to the second gate structure, in a vertical direction that is perpendicular to the first and second directions, and a lower end of the first gate electrode is located on a lower height level than a lower end of the second gate electrode.

公开(公告)号：US12261220B2

公开(公告)日：2025-03-25

申请号：US18597440

申请日：2024-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woocheol Shin ,  Sunggi Hur ,  Sangwon Baek ,  Junghan Lee

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device includes channels, a gate structure, and a source/drain layer. The channels are stacked in a vertical direction. Each channel extends in a first direction. The gate structure extends in a second direction. The gate structure covers the channels. The source/drain layer is connected to each of opposite sidewalls in the first direction of the channels on the substrate, and includes a doped semiconductor material. The source/drain layer includes first and second epitaxial layers having first and second impurity concentrations, respectively. The first epitaxial layer covers a lower surface and opposite sidewalls in the first direction of the second epitaxial layer. A portion of each of opposite sidewalls in the first direction of the gate structure protrudes in the first direction from opposite sidewalls in the first direction of the channels to partially penetrate through the first epitaxial layer but not to contact the second epitaxial layer.

公开(公告)号：US11996406B2

公开(公告)日：2024-05-28

申请号：US18148233

申请日：2022-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junggun You ,  Sungil Park ,  Joohee Jung ,  Sunggi Hur

IPC: H01L27/088 ,  H01L21/762 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L27/088 ,  H01L21/823456 ,  H01L21/823481

Abstract: A semiconductor device includes a substrate including first and second active regions extending in a first direction and isolated from direct contact with each other in the first direction; a device isolation layer between the first and second active regions in the substrate; and first and second gate structures extending in a second direction on the substrate while respectively intersecting end portions of the first and second active regions. The first gate structure includes a first gate electrode. The second gate structure includes a second gate electrode. The first gate structure protrudes further toward the device isolation layer, as compared to the second gate structure, in a vertical direction that is perpendicular to the first and second directions, and a lower end of the first gate electrode is located on a lower height level than a lower end of the second gate electrode.