公开(公告)号：US09672611B2

公开(公告)日：2017-06-06

申请号：US14693914

申请日：2015-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho Yang ,  Kaiyuan Chi ,  Seunghune Yang ,  Sibo Cai

IPC: G06K9/00 ,  G06T7/00 ,  H01L21/66 ,  G01N23/20 ,  H01J37/22 ,  H01J37/28

CPC classification number: G06T7/001 ,  G01N23/20 ,  G01N23/2251 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/24592 ,  H01J2237/2816 ,  H01J2237/2817 ,  H01L22/12

Abstract: A pattern analysis method of a semiconductor device includes extracting a contour image of material layer patterns formed on a wafer, calculating an individual density value (DV) representing an area difference between the contour image and a target layout image, scoring the material layer patterns on the wafer using the individual DV, identifying a failure pattern among the scored material layer patterns, calculating coordinates of the identified failure pattern and displaying the coordinates on a critical dimension-scanning electron microscopy (CD-SEM) image, inputting a reference DV in the computer and automatically sorting the material layer patterns into material layer patterns having a hotspot and material layer patterns not having a hotspot, and reviewing the sorted material layer patterns having the hotspot.

公开(公告)号：US10126646B2

公开(公告)日：2018-11-13

申请号：US15615851

申请日：2017-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki-Ho Yang ,  Sibo Cai ,  Seung-Hune Yang

IPC: G03F1/72 ,  G03F1/84

Abstract: In a method of calculating a shift value of a cell contact, a reference region and a correction region may be set on an image of an actual cell block. The cell block may include a plurality of actual cell contacts formed using a mask. Each of preliminary shift values of the actual cell contacts with respect to target cell contacts in a target cell block to be formed using the mask may be measured based on the image. The preliminary shift values of the actual cell contacts in the reference region may be minimized. Actual shift values of the actual cell contacts in the correction region with respect to the minimized preliminary shift values may be calculated. Thus, the mask may be corrected using the accurately measured shift values so that the cell contacts may have designed positions.

公开(公告)号：US09476840B2

公开(公告)日：2016-10-25

申请号：US14340910

申请日：2014-07-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiho Yang ,  Seunghune Yang ,  Sibo Cai

IPC: G01N21/956 ,  G06K9/46 ,  G06T11/60 ,  G01N21/88 ,  G03F7/20 ,  G06T7/00

CPC classification number: G01N21/956 ,  G01N21/88 ,  G01N21/8851 ,  G03F7/70616 ,  G06K9/4604 ,  G06T7/0006 ,  G06T7/001 ,  G06T11/60 ,  G06T2207/20221 ,  G06T2207/30148

Abstract: Inventive concepts provide a method of inspecting a semiconductor device including obtaining inspection image data of an inspection pattern of an inspection layer on a substrate. The method may include extracting inspection contour data including an inspection pattern contour from the inspection image data, and merging the inspection contour data with comparison contour data of a comparison layer to obtain merged data. The comparison layer may overlap the inspection layer. The method may also include determining a horizontal distance between the inspection pattern contour and a comparison pattern contour of the comparison contour data based on the merged data.

Abstract translation: 本发明的概念提供了一种检查半导体器件的方法，包括获得在衬底上检查层的检查图案的检查图像数据。 该方法可以包括从检查图像数据提取包括检查图案轮廓的检查轮廓数据，并且将检查轮廓数据与比较层的比较轮廓数据合并以获得合并的数据。 比较层可以与检查层重叠。 该方法还可以包括基于合并的数据确定检查图案轮廓和比较轮廓数据的比较花样轮廓之间的水平距离。

公开(公告)号：US10255397B2

公开(公告)日：2019-04-09

申请号：US15418879

申请日：2017-01-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sibo Cai ,  Moon-Gyu Jeong

IPC: G06F17/50 ,  G03F1/36

Abstract: A method for rasterizing a mask layout includes driving an image converter to obtain a raster image of the mask layout. The raster image is obtained by providing a pattern from the mask layout on a grid, obtaining grid points surrounding an edge of the pattern, constructing a path on the pattern which extends from the edge toward adjacent edges of the pattern, and allocating a raster value to each of the grid points. The raster value corresponds to an overlap area between a pixel, having a center located on one of the grid points, and the pattern having a boundary limited by the path.

公开(公告)号：US09703189B2

公开(公告)日：2017-07-11

申请号：US14685620

申请日：2015-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki-Ho Yang ,  Sibo Cai ,  Seung-Hune Yang

IPC: G06F17/50 ,  G03F1/72 ,  G03F1/84

CPC classification number: G03F1/72 ,  G03F1/84

Abstract: In a method of calculating a shift value of a cell contact, a reference region and a correction region may be set on an image of an actual cell block. The cell block may include a plurality of actual cell contacts formed using a mask. Each of preliminary shift values of the actual cell contacts with respect to target cell contacts in a target cell block to be formed using the mask may be measured based on the image. The preliminary shift values of the actual cell contacts in the reference region may be minimized. Actual shift values of the actual cell contacts in the correction region with respect to the minimized preliminary shift values may be calculated. Thus, the mask may be corrected using the accurately measured shift values so that the cell contacts may have designed positions.