Invention Grant
- Patent Title: Methods of inspecting a semiconductor device and semiconductor inspection systems
- Patent Title (中): 检查半导体器件和半导体检查系统的方法
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Application No.: US14340910Application Date: 2014-07-25
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Publication No.: US09476840B2Publication Date: 2016-10-25
- Inventor: Kiho Yang , Seunghune Yang , Sibo Cai
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0125474 20131021
- Main IPC: G01N21/956
- IPC: G01N21/956 ; G06K9/46 ; G06T11/60 ; G01N21/88 ; G03F7/20 ; G06T7/00
Abstract:
Inventive concepts provide a method of inspecting a semiconductor device including obtaining inspection image data of an inspection pattern of an inspection layer on a substrate. The method may include extracting inspection contour data including an inspection pattern contour from the inspection image data, and merging the inspection contour data with comparison contour data of a comparison layer to obtain merged data. The comparison layer may overlap the inspection layer. The method may also include determining a horizontal distance between the inspection pattern contour and a comparison pattern contour of the comparison contour data based on the merged data.
Public/Granted literature
- US20150110383A1 METHODS OF INSPECTING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR INSPECTION SYSTEMS Public/Granted day:2015-04-23
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