公开(公告)号：US11037988B2

公开(公告)日：2021-06-15

申请号：US16802976

申请日：2020-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Uk Kim ,  Jeong Hee Park ,  Seong Geon Park ,  Soon Oh Park ,  Jung Moo Lee

IPC: H01L27/24 ,  H01L45/00 ,  G11C7/18 ,  G11C13/00 ,  G11C8/14

Abstract: A semiconductor device includes a first memory cell, a second memory cell, a first capping film, and a second capping film. The first memory cell includes a first ovonic threshold switch (OTS) on a first phase change memory. The second memory cell includes a second OTS on a second phase change memory. The first capping film is on side surfaces of the first and second memory cells. The second capping film is on the first capping film and fills a space between the first and second memory cells.

公开(公告)号：US10714685B2

公开(公告)日：2020-07-14

申请号：US16529017

申请日：2019-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Kyu Yang ,  Seong Geon Park ,  Dong Jun Seong ,  Dong Ho Ahn ,  Jung Moo Lee ,  Seol Choi ,  Hideki Horii

IPC: H01L45/00 ,  G11C13/00 ,  H01L27/24

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.

公开(公告)号：US10403818B2

公开(公告)日：2019-09-03

申请号：US15401474

申请日：2017-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Kyu Yang ,  Seong Geon Park ,  Dong Jun Seong ,  Dong Ho Ahn ,  Jung Moo Lee ,  Seol Choi ,  Hideki Horii

IPC: G11C13/00 ,  H01L27/24 ,  H01L45/00

Abstract: Forming a semiconductor device that includes a memory cell array may include performing a switching firing operation on one or more memory cells of the memory array to cause a threshold voltage distribution associated with threshold switching devices in the memory cells to be reduced. The switching device firing operation may be performed such that the threshold voltage distribution is reduced while maintaining the one or more threshold switching devices in the amorphous state. Performing the switching device firing operation on a threshold switching device may include heating the threshold switching device, applying a voltage to the threshold switching device, applying a current to the threshold switching device, some combination thereof, or the like.