公开(公告)号：US20220139991A1

公开(公告)日：2022-05-05

申请号：US17368112

申请日：2021-07-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Shik KIM ,  Min-Sun KEEL ,  Sang Kil LEE

IPC: H01L27/146 ,  H01L25/065 ,  H01L27/22

Abstract: An image sensor includes an upper chip having a pixel array connected to a first connecting structure, and a lower chip below the upper chip and having a second connecting structure connected to the first connecting structure and having first and second stacked metal layers with a same thickness, a third metal layer on the second metal layer and thicker than the second metal layer, a fourth metal layer on the third metal layer and thicker than the third metal layer, first through third insulating layers alternating with the first through fourth metal layers, a first memory device with a first MTJ element in at least one of the first and second insulating layers, and a second memory device with a second MTJ element different from the first MTJ element, the second MTJ element being in at least one of the first through third insulating layers.

公开(公告)号：US20240363654A1

公开(公告)日：2024-10-31

申请号：US18389071

申请日：2023-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Mi Ra LEE ,  Kyung-Min KIM ,  Min-Sun KEEL

IPC: H01L27/146 ,  H04N25/77 ,  H04N25/78

CPC classification number: H01L27/14612 ,  H01L27/14636 ,  H01L27/14643 ,  H04N25/77 ,  H04N25/78

Abstract: Provided is a pixel including a first photodiode, a second photodiode having a smaller light receiving area than the first photodiode, a storage capacitor configured to store charges generated by the second photodiode, and a plurality of floating nodes. The pixel according to the present disclosure includes first and second control transistors for transmitting a first voltage or a second voltage to a first node of the storage capacitor in a reset period and an exposure period, and for floating the first node by controlling the first and second control transistors in a readout period.

公开(公告)号：US20190296070A1

公开(公告)日：2019-09-26

申请号：US16206118

申请日：2018-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Gu JIN ,  Young Chan KIM ,  Min-Sun KEEL

IPC: H01L27/146 ,  H04N13/254

Abstract: Image sensors are provided. An image sensor includes a substrate that includes a pixel region, a first surface, and a second surface that is opposite the first surface. The image sensor includes first and second photogates that are on the first surface and are configured to generate electric charge responsive to incident light in the pixel region. Moreover, the image sensor includes first and second lenses that are on the second surface and are configured to pass the incident light toward the first and second photogates.

公开(公告)号：US20180151626A1

公开(公告)日：2018-05-31

申请号：US15632751

申请日：2017-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min-Sun KEEL ,  Sehyeon KANG ,  Tae-Yon LEE

IPC: H01L27/30 ,  H04N5/378

CPC classification number: H01L27/307 ,  H01L27/146 ,  H01L27/1461 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14665 ,  H04N5/341 ,  H04N5/378 ,  H04N5/379

Abstract: An image sensor includes a plurality of row lines extending in a first direction, a plurality of column lines including a plurality of first column lines and a plurality of second column lines, the plurality of column lines intersects the plurality of row lines, and a plurality of pixels arranged along the plurality of row lines and the plurality of column lines, the plurality of pixels includes a plurality of pixel groups, each of the plurality of pixel groups includes two or more pixels. Each pixel includes a first photoelectric element, a second photoelectric element, a first pixel circuit connected to the first photoelectric element, and a second pixel circuit connected to the second photoelectric element. In each pixel group, the first pixel circuits share one of the plurality of first column lines and the second pixel circuits share one of the plurality of second column lines.

公开(公告)号：US20240048869A1

公开(公告)日：2024-02-08

申请号：US18335488

申请日：2023-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanho CHUN ,  Kyung-Min KIM ,  Min-Sun KEEL ,  Donghyun KIM ,  Mira LEE

IPC: H04N25/772 ,  H04N25/76 ,  H04N25/771 ,  H04N25/59 ,  H04N25/65 ,  H04N25/616

CPC classification number: H04N25/772 ,  H04N25/7795 ,  H04N25/771 ,  H04N25/59 ,  H04N25/65 ,  H04N25/616

Abstract: Disclosed is an image sensor including a pixel array including a plurality of pixels, each of the pixels including a first photodiode and a second photodiode, each of which outputs a first pixel signal based on a first conversion gain using the second photodiode in a first period, outputs a second pixel signal based on a second conversion gain using the second photodiode in a second period, outputs a third pixel signal based on the first conversion gain using the first photodiode in a third period, and outputs a fourth pixel signal based on the second conversion gain using the first photodiode in a fourth period, an ADC circuit that performs sampling on a reset signal and an image signal of each of the first to fourth pixel signal. A sampling count and the number of sampling bits are adjusted differently from each of the first to fourth period.

公开(公告)号：US20220130884A1

公开(公告)日：2022-04-28

申请号：US17393855

申请日：2021-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae Shik KIM ,  Min-Sun KEEL ,  Hoon Joo NA ,  Kang Ho LEE ,  Kil Ho LEE ,  Sang Kil LEE ,  Jung Hyuk LEE ,  Shin Hee HAN

IPC: H01L27/146

Abstract: An image sensor including a variable resistance element is provided. The image sensor comprises first and second chips having first and second connecting structures; and a contact plug connecting the first and second chips. The first chip includes a photoelectric conversion element. The second chip includes a first variable resistance element. The contact plug extends from the first surface of the first semiconductor substrate to connect the first and second connecting structures.

公开(公告)号：US20190296087A1

公开(公告)日：2019-09-26

申请号：US16437619

申请日：2019-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-Sun KEEL ,  Sehyeon KANG ,  Tae-Yon LEE

IPC: H01L27/30 ,  H04N5/369 ,  H01L27/146 ,  H04N5/378 ,  H04N5/341

Abstract: An image sensor includes a plurality of row lines extending in a first direction, a plurality of column lines including a plurality of first column lines and a plurality of second column lines, the plurality of column lines intersects the plurality of row lines, and a plurality of pixels arranged along the plurality of row lines and the plurality of column lines, the plurality of pixels includes a plurality of pixel groups, each of the plurality of pixel groups includes two or more pixels. Each pixel includes a first photoelectric element, a second photoelectric element, a first pixel circuit connected to the first photoelectric element, and a second pixel circuit connected to the second photoelectric element. In each pixel group, the first pixel circuits share one of the plurality of first column lines and the second pixel circuits share one of the plurality of second column lines.