Abstract:
An image sensor includes a pixel array that includes a plurality of pixels, and a row driver. Each pixel includes a photodiode, a transfer gate transistor between the photodiode and a floating diffusion node, and a first transistor between the floating diffusion node and a first voltage node configured to receive a first voltage. The row driver is connected with rows of the pixels through row lines. For each pixel of a selected row among the rows, the row driver is configured to apply a second voltage to a gate of the first transistor such that the first transistor is turned on and the floating diffusion node is reset, and turn on the transfer gate transistor such that electrons integrated in the photodiode are dumped to the floating diffusion node.
Abstract:
A level shifter circuitry is provided. The level shifter circuitry includes a first sub-circuit connected to a first power supply voltage, a second sub-circuit connected to a second power supply voltage and a shifting circuit which is connected to the first and second sub-circuits and outputs the first power supply voltage or the second power supply voltage to an output terminal or an inverted output terminal in response to a signal applied to an input node in accordance with an enable signal.
Abstract:
An analog to digital converting circuit includes a correlated double sampling circuit (CDS) that compares a pixel signal with a ramp signal, and outputs a comparison signal, a timing amplifier that increases an active time of the comparison signal “N” times, and outputs an extended signal, wherein the “N” is a positive integer, and a counter that outputs a digital signal corresponding to the pixel signal in response to the extended signal and a first clock signal.
Abstract:
A method and apparatus are provided for handing over from a Long Term Evolution (LTE) network to a Circuit Switching (CS) network by a call manager in a wireless communication system. The method includes receiving, from an Enhanced Node B (ENB) of the LTE network, a handover required message for a Packet Switching (PS) to CS handover from the LTE network to the CS network, when the PS to CS handover is decided based on measurement reports of a User Equipment (UE); sending, to a Mobile Switching Center (MSC) of the CS network, a PS to CS handover request message including an International mobile subscriber identity (IMSI) for identifying the UE and a target IDentifier (ID) for a target cell of the CS network; receiving a PS to CS handover response message from the MSC; and sending, to the UE via the ENB, a handover command message.
Abstract:
Disclosed is an image sensor including a pixel array including a plurality of pixels, each of the pixels including a first photodiode and a second photodiode, each of which outputs a first pixel signal based on a first conversion gain using the second photodiode in a first period, outputs a second pixel signal based on a second conversion gain using the second photodiode in a second period, outputs a third pixel signal based on the first conversion gain using the first photodiode in a third period, and outputs a fourth pixel signal based on the second conversion gain using the first photodiode in a fourth period, an ADC circuit that performs sampling on a reset signal and an image signal of each of the first to fourth pixel signal. A sampling count and the number of sampling bits are adjusted differently from each of the first to fourth period.
Abstract:
Disclosed is a bandgap reference circuit, which includes a first current generator that generates a first current proportional to a temperature, a second current generator that outputs a second current obtained by mirroring the first current to a first node at which a reference voltage is formed, a first resistor that is connected with the first node and is supplied with the second current, and a first bipolar junction transistor (BJT) that includes an emitter node connected with the first resistor, a base node supplied with a first power, and a collector node supplied with a second power different from the first power.
Abstract:
At least one example embodiment discloses a semiconductor device including a first wiring on a substrate. A second wiring is on the first wiring. A first cell is between the first wiring and the second wiring. The first cell has a first selector and a first resistive change device. A third wiring is on the second wiring. A second cell is between the second wiring and the third wiring. The second cell has a second selector and a second resistive change device. The second selector has a different thickness from the first selector.
Abstract:
An image sensor supporting a normal sampling mode and a 1/N sampling mode for transmitting image data detected by a plurality of unit image sensors and stored in a plurality of latch circuits to a data processor using a plurality of transmission lines, wherein N is a natural number greater than 2, the image sensor including a horizontal address generator configured to generate horizontal addresses corresponding to addresses of the plurality of latch circuits, and to generate, based on the horizontal addresses, a first channel selection control signal and a second channel selection control signal of which activation times at least partially overlap.
Abstract:
The image sensor includes a plurality of column lines, a plurality of active road circuits and a selection circuit. The plurality of column lines are each connected to a corresponding one of a plurality of pixels. The plurality of active road circuits are each connected to a corresponding one of the plurality of column lines. The selection circuit is configured to enable a portion of the plurality of active road circuits based on a plurality of column selection signals.
Abstract:
An image sensor includes a pixel array including active pixels and optical black (OB) pixels; a comparator having a first input terminal at which a pixel signal of the pixel array is applied, and a second input terminal to which a ramp signal is applied; a digital-to-analog converter (DAC) that generates an OB voltage based on dark current data obtained by reading out pixel signals of the OB pixels; and a dark current removal circuit that applies a compensation voltage corresponding to the OB voltage to at least one of the first input terminal and the second input terminal during a readout period of an active pixel.