公开(公告)号：US10438891B2

公开(公告)日：2019-10-08

申请号：US15697881

申请日：2017-09-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-jine Park ,  Kee-sang Kwon ,  Jae-jik Baek ,  Yong-sun Ko ,  Kwang-wook Lee

IPC: H01L23/532 ,  H01L23/522 ,  H01L29/78 ,  H01L21/768 ,  H01L21/285 ,  H01L21/8234 ,  H01L29/417

Abstract: An integrated circuit device includes an insulating film on a substrate, a lower wiring layer penetrating at least a portion of the insulating film, the lower wiring layer including a first metal, a lower conductive barrier film surrounding a bottom surface and a sidewall of the lower wiring layer, the lower conductive barrier film including a second metal different from the first metal, a first metal silicide capping layer covering a top surface of the lower wiring layer, the first metal silicide capping layer including the first metal, and a second metal silicide capping layer contacting the first metal silicide capping layer and disposed on the lower conductive barrier film, the second metal silicide capping layer including the second metal.

公开(公告)号：US10115797B2

公开(公告)日：2018-10-30

申请号：US15059673

申请日：2016-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-yeol Song ,  Wan-don Kim ,  Sang-Jin Hyun ,  Jin-wook Lee ,  Kee-sang Kwon ,  Ki-hyung Ko ,  Sung-woo Myung

IPC: H01L27/092 ,  H01L29/423 ,  H01L29/78 ,  H01L27/088 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/28

Abstract: In a semiconductor device including a gate line having a relatively narrow width and a relatively smaller pitch and a method of manufacturing the semiconductor device, the semiconductor device includes a substrate having a fin-type active region, a gate insulating layer that covers an upper surface and sides of the fin-type active region, and a gate line that extends and intersects the fin-type active region while covering the upper surface and the both sides of the fin-type active region, the gate line being on the gate insulating layer, wherein a central portion of an upper surface of the gate line in a cross-section perpendicular to an extending direction of the gate line has a concave shape.