公开(公告)号：US10438891B2

公开(公告)日：2019-10-08

申请号：US15697881

申请日：2017-09-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-jine Park ,  Kee-sang Kwon ,  Jae-jik Baek ,  Yong-sun Ko ,  Kwang-wook Lee

IPC: H01L23/532 ,  H01L23/522 ,  H01L29/78 ,  H01L21/768 ,  H01L21/285 ,  H01L21/8234 ,  H01L29/417

Abstract: An integrated circuit device includes an insulating film on a substrate, a lower wiring layer penetrating at least a portion of the insulating film, the lower wiring layer including a first metal, a lower conductive barrier film surrounding a bottom surface and a sidewall of the lower wiring layer, the lower conductive barrier film including a second metal different from the first metal, a first metal silicide capping layer covering a top surface of the lower wiring layer, the first metal silicide capping layer including the first metal, and a second metal silicide capping layer contacting the first metal silicide capping layer and disposed on the lower conductive barrier film, the second metal silicide capping layer including the second metal.