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公开(公告)号:US10913754B2
公开(公告)日:2021-02-09
申请号:US16251236
申请日:2019-01-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Gyu-hee Park , Youn-soo Kim , Jae-soon Lim , Youn-joung Cho , Kazuki Harano , Haruyoshi Sato , Tsubasa Shiratori , Naoki Yamada
IPC: C07F5/00 , C23C16/455 , C23C16/34 , H01L27/28 , H01L51/00 , C23C16/40 , H01L21/02 , H01L29/78 , H01L51/05 , H01L29/66
Abstract: A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below, wherein, in Formula 1, R1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R2 and R3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R2 and R3 being a C3-C5 branched alkyl group, and R4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.
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公开(公告)号:US11746121B2
公开(公告)日:2023-09-05
申请号:US17072096
申请日:2020-10-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Gyuhee Park , Younjoung Cho , Haruyoshi Sato , Kazuki Harano , Hiroyuki Uchiuzou
CPC classification number: C07F11/00 , C01B21/062 , C01G39/02 , C23C16/34 , C23C16/405
Abstract: A molybdenum compound and a method of manufacturing an integrated circuit device, the molybdenum compound being represented by the following General Formula (I):
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公开(公告)号:US11524973B2
公开(公告)日:2022-12-13
申请号:US16857292
申请日:2020-04-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Seung-Min Ryu , Akio Saito , Takanori Koide , Atsushi Yamashita , Kazuki Harano , Gyu-Hee Park , Soyoung Lee , Jaesoon Lim , Younjoung Cho
IPC: C07F9/00 , H01L21/285 , H01L51/00 , H01L49/02
Abstract: Described herein are metal compounds and methods of fabricating semiconductor devices using the same. The metal compounds include a material of Chemical Formula 1.
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公开(公告)号:US20210380622A1
公开(公告)日:2021-12-09
申请号:US17215056
申请日:2021-03-29
Applicant: Samsung Electronics Co., Ltd. , ADEKA CORPORATION
Inventor: Seung-Min Ryu , Gyu-Hee Park , Youn Joung Cho , Kazuki Harano , Takanori Koide , Wakana Fuse , Yoshiki Manabe , Yutaro Aoki , Hiroyuki Uchiuzou , Kazuya Saito
IPC: C07F17/00 , C23C16/18 , C23C16/455
Abstract: Materials for fabricating a thin film that has improved quality and productivity are provided. The materials may include a Group 5 element precursor of formula (1): M1 may be a Group 5 element, each of R1 to R10 independently may be a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, or f7onnula (2), R11 may be a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and L1 may be an alkyl group, an alkylamino group, an alkoxy group or an alkylsilyl group, each of which may have 1 to 5 carbon atoms and may be substituted or unsubstituted. Formula (2) may have a structure of Each of Ra to Rc independently may be a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms.
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