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    ELECTRONIC DEVICE COMPRISING ANTENNA
    3.
    发明公开
    ELECTRONIC DEVICE COMPRISING ANTENNA 审中-公开

    公开(公告)号：US20230224395A1

    公开(公告)日：2023-07-13

    申请号：US18167497

    申请日：2023-02-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Cheolhong SON ,  Gyusub KIM ,  Jongwon KIM ,  Kyungmoon SEOL ,  Jungkyu LEE ,  Bumjin CHO

    IPC: H04M1/02 ,  H01Q1/24

    CPC classification number: H04M1/0277 ,  H04M1/0216 ,  H04M1/0268 ,  H01Q1/243 ,  H04M2201/08

    Abstract: An electronic device is provided. The electronic device includes a housing including a first housing and a second housing connected to the first housing by a hinge structure to be rotatable around a first axis, a magnet structure disposed inside the housing, the magnet structure including a magnet and a conductive coating member for enclosing a surface of the magnet, and a wireless communication circuit electrically connected to the conductive coating member, wherein the magnet is disposed to maintain a folding state in which the first housing and the second housing are folded, and the wireless communication circuit is configured to feed a portion of the conductive coating member of the magnet structure to transmit and/or receive a signal in a designated first frequency band by using at least one of the conductive coating member as a first antenna radiator.

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220415909A1

    公开(公告)日：2022-12-29

    申请号：US17903315

    申请日：2022-09-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Haemin LEE ,  Jongwon KIM ,  Shinhwan KANG ,  Kohji KANAMORI ,  Jeehoon HAN

    IPC: H01L27/1157 ,  H01L27/11578 ,  H01L27/11521 ,  H01L27/11556

    Abstract: A semiconductor device includes a first stack group having first interlayer insulating layers and first gate layers, alternately and repeatedly stacked on a substrate and a second stack group comprising second interlayer insulating layers and second gate layers, alternately and repeatedly stacked on the first stack group. Separation structures pass through the first and second stack groups and include a first separation region and a second separation region. A vertical structure passes through the first and second stack groups and includes a first vertical region and a second vertical region. A conductive line is electrically connected to the vertical structure on the second stack group. A distance between an upper end of the first vertical region and an upper surface of the substrate is greater than a distance between an upper end of the first separation region and an upper surface of the substrate.

    ELECTRONIC DEVICE INCLUDING ANTENNA
    5.
    发明申请
    ELECTRONIC DEVICE INCLUDING ANTENNA 有权

    公开(公告)号：US20250087886A1

    公开(公告)日：2025-03-13

    申请号：US18943407

    申请日：2024-11-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jaehyung KIM ,  Hongpyo BAE ,  Seunghwan KIM ,  Jongwon KIM ,  Taegyu KIM ,  Jesun MOON ,  Himchan YUN ,  Jaebong CHUN ,  Hochul HWANG

    IPC: H01Q5/364 ,  H01Q1/24

    Abstract: An electronic device includes a display, a rear cover, a side member surrounding the space between the display and the rear cover, the side member having a groove formed therein, a side key disposed the groove and including a conductive portion, a wireless communication circuit, at least one processor, and a first conductive connection member electrically connecting the at least one processor to the side key. The wireless communication circuit is configured to feed power to a first portion of the side member surrounding an edge of the groove through the first conductive connection member electrically connecting the at least one processor to the side key, and transmit and/or receive radio frequency (RF) signals in a specified frequency band, based on an electrical path formed in the first portion of the side member and the conductive portion of the side key.

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210035987A1

    公开(公告)日：2021-02-04

    申请号：US16844234

    申请日：2020-04-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Haemin LEE ,  Jongwon KIM ,  Shinhwan KANG ,  Kohji KANAMORI ,  Jeehoon HAN

    IPC: H01L27/1157 ,  H01L27/11578 ,  H01L27/11521 ,  H01L27/11556

    Abstract: A semiconductor device includes a first stack group having first interlayer insulating layers and first gate layers, alternately and repeatedly stacked on a substrate and a second stack group comprising second interlayer insulating layers and second gate layers, alternately and repeatedly stacked on the first stack group. Separation structures pass through the first and second stack groups and include a first separation region and a second separation region. A vertical structure passes through the first and second stack groups and includes a first vertical region and a second vertical region. A conductive line is electrically connected to the vertical structure on the second stack group. A distance between an upper end of the first vertical region and an upper surface of the substrate is greater than a distance between an upper end of the first separation region and an upper surface of the substrate.

    THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE
    7.
    发明申请
    THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE 审中-公开

    公开(公告)号：US20190035807A1

    公开(公告)日：2019-01-31

    申请号：US15991476

    申请日：2018-05-29

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jongwon KIM ,  Young-Jin JUNG

    IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11526 ,  H01L27/11573 ,  H01L29/792

    Abstract: A three-dimensional semiconductor memory device and a method of manufacturing the same. The device may include a substrate including a cell array region and a connection region, an electrode structure including electrodes vertically stacked on the substrate, a plurality of first vertical structures penetrating the electrode structures on the cell array region, and a plurality of second vertical structures penetrating the electrode structures on the connection region. Each of the first and second vertical structures may include a lower semiconductor pattern connected to the substrate and an upper semiconductor pattern connected to the lower semiconductor pattern.

    ELECTRONIC APPARATUS AND CONTROLLING METHOD THEREOF
    9.
    发明公开
    ELECTRONIC APPARATUS AND CONTROLLING METHOD THEREOF 审中-公开

    公开(公告)号：US20230364465A1

    公开(公告)日：2023-11-16

    申请号：US18328252

    申请日：2023-06-02

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hongyoon KIM ,  Kiljong KIM ,  Jongwon KIM ,  Seokwoo SONG ,  Hyunkook CHO

    IPC: A63B24/00 ,  G06T7/68 ,  G06T7/70 ,  G06V10/44 ,  G06V40/20

    CPC classification number: A63B24/0003 ,  G06T7/68 ,  G06T7/70 ,  G06V10/44 ,  G06V40/23 ,  G06V2201/07 ,  G06T2207/20084 ,  G06T2207/30196

    Abstract: An electronic apparatus is disclosed. The electronic apparatus includes: a memory including at least one instruction, a processor coupled with the memory and configured to control the electronic apparatus, and the processor is configured, by executing the at least one instruction, to: obtain a moving image, identify a person and pose data of the person from a plurality of frames in the moving image, obtain exercise pattern information corresponding to the plurality of frames using pose data of the identified person, recognize an exercise motion of the identified person by inputting at least one frame of the moving image into at least one neural network model, and obtain exercise feature information corresponding to the recognized exercise motion, identify, based on the exercise feature information and the exercise pattern information, a first frame interval and a second frame interval different from the first frame interval from among the plurality of frames in the moving image, and provide information on an exercise motion corresponding to the second frame interval by comparing the first frame interval with the second frame interval.

    SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR MANUFACTURING THE SAME
    10.
    发明申请
    SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20190139984A1

    公开(公告)日：2019-05-09

    申请号：US16220836

    申请日：2018-12-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jongwon KIM ,  Keejeong Rho ,  Jin-Yeon Won ,  Tae-Wan Lim ,  Woohyun Park

    IPC: H01L27/11582 ,  H01L27/11565

    CPC classification number: H01L27/11582 ,  H01L27/11565

    Abstract: Semiconductor memory devices and methods for manufacturing the same are provided. The device may include vertical channel structures that are two-dimensionally arranged on a substrate and vertically extend from the substrate. The device may also include bit lines on the vertical channel structures, and each of the bit lines may be commonly connected to the vertical channel structures arranged in a first direction. The device may further include common source lines that extend between the vertical channel structures in a second direction intersecting the first direction and a source strapping line that is disposed at the same vertical level as the bit lines and electrically connects the common source lines to each other.

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