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    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
    1.
    发明申请
    METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20230131215A1

    公开(公告)日：2023-04-27

    申请号：US17863741

    申请日：2022-07-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Keunhwi Cho ,  Jinkyu Kim ,  Myunggil Kang ,  Dongwon Kim ,  Kisung Suh

    IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/417 ,  H01L29/78

    Abstract: A method of manufacturing a semiconductor device includes forming a semiconductor structure extending from a substrate in a first direction and having first and second regions; forming a sacrificial gate pattern intersecting the first region of the semiconductor structure and extending in a second direction perpendicular to the first direction; reducing a width in the second direction of the second region of the semiconductor structure exposed to at least one side of the sacrificial gate pattern; forming at least one recess portion by removing a portion of the second region of the semiconductor structure; forming one or more source/drain regions in the recess portion of the semiconductor structure on at least one side of the sacrificial gate pattern; forming at least one gap region by removing the sacrificial gate pattern; and forming a gate structure by depositing a gate dielectric layer and a gate electrode in the gap region.

    METHOD AND ELECTRONIC DEVICE FOR USER INTERFACE
    2.
    发明申请
    METHOD AND ELECTRONIC DEVICE FOR USER INTERFACE 审中-公开
    用户界面的方法和电子设备

    公开(公告)号：US20150128097A1

    公开(公告)日：2015-05-07

    申请号：US14534122

    申请日：2014-11-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Haechang Hyun ,  Jinkyu Kim ,  Jinwan An ,  Mangun Hur

    IPC: G06F3/0484 ,  G06F3/0354

    CPC classification number: G06F3/0488 ,  G06F3/0418 ,  G06F2203/04108

    Abstract: A method for operating an electronic device includes detecting a touch input by an external object on a first part of a display, determining whether the touch input is accompanied by and adjacent input, and processing a function corresponding to a second part of the display when the touch input is not accompanied by the adjacent input. An electronic device includes a display to display an image, a touch sensor to sense at least one of a touch input and adjacent input, and a processor configured to detect the touch input by an external object on a first part of the display via the touch sensor, determine whether the touch input is accompanied by the adjacent input and process a function corresponding to a second part of the display when the touch input is not accompanied by the adjacent input. Other embodiments are also disclosed.

    Abstract translation: 一种用于操作电子设备的方法包括在显示器的第一部分上检测外部对象的触摸输入，确定触摸输入是否伴随着相邻输入，并且当处理与显示的第二部分相对应的功能时 触摸输入不伴随相邻输入。 电子设备包括显示图像的显示器，用于感测触摸输入和相邻输入中的至少一个的触摸传感器，以及被配置为经由触摸在显示器的第一部分上检测外部对象的触摸输入的处理器 传感器，当触摸输入不伴随相邻输入时，确定触摸输入是否伴随着相邻输入并处理与显示器的第二部分相对应的功能。 还公开了其他实施例。

    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12266659B2

    公开(公告)日：2025-04-01

    申请号：US17843263

    申请日：2022-06-17

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Keunhwi Cho ,  Jinkyu Kim ,  Myunggil Kang ,  Dongwon Kim ,  Jaechul Kim ,  Sanghoon Lee

    IPC: H01L27/118 ,  H03K19/20

    Abstract: A semiconductor device includes a substrate including a first device region and a second device region, active regions spaced apart from each other on the substrate, having a constant width, extending in a first direction parallel to an upper surface of the substrate and including a first active region and a second active region provided on the first device region and a third active region and a fourth active region provided on the second device region, a plurality of channel layers provided on the active regions and configured to be spaced apart from each other in a direction perpendicular to the upper surface of the substrate, gate structures provided on the substrate and extending to cross the active regions and the plurality of channel layers, and source/drain regions provided on the active regions on at least one side of the gate structures.

    Method and apparatus for reducing power consumption of electronic device
    5.
    发明授权
    Method and apparatus for reducing power consumption of electronic device 有权

    公开(公告)号：US10299210B2

    公开(公告)日：2019-05-21

    申请号：US15001457

    申请日：2016-01-20

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jinkyu Kim ,  Jinhong Seol ,  Mangun Hur ,  Jongphil Lee

    IPC: H04W52/02 ,  H04W60/04

    Abstract: A method, an apparatus, and a system are disclosed, which can reduce power consumption of an electronic device by allowing a communication relay device, to which the electronic device is connected, to perform an operation of the electronic device corresponding to waking up from a sleep mode according to a system timer cycle to identify paging and performing channel monitoring on behalf of the electronic device. A method of reducing power consumption of an electronic device may include: making a connection between the electronic device and a communication relay device; transmitting forwarding information to the communication relay device in response to the connection with the communication relay device by the electronic device; notifying of entry into a sleep mode to the communication relay device and entering the sleep mode by the electronic device; performing channel monitoring for the electronic device in response to the notification of the entry of the electronic device into the sleep mode by the communication relay device; waking up the electronic device when detecting paging corresponding to the electronic device by the communication relay device; and processing the paging in response to the waking-up of the communication relay device by the electronic device.

    SEMICONDUCTOR DEVICES
    7.
    发明申请
    SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20240413204A1

    公开(公告)日：2024-12-12

    申请号：US18615708

    申请日：2024-03-25

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jeewoong KIM ,  Hidenobu Fukutome ,  Jinkyu Kim ,  Yunsuk Nam ,  Dongyun Lee

    IPC: H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

    Abstract: A semiconductor device includes: insulating patterns spaced apart from each other in a first direction and in a second direction that intersects the first direction; a substrate insulating layer on first side surfaces of the insulating patterns; a device isolation layer on second side surfaces of the insulating patterns; channel layers on the insulating patterns and spaced apart from each other in a vertical direction that is perpendicular to an upper surface of the device isolation layer; gate structures vertically overlapping the insulating patterns, surrounding each of the channel layers, and extending in the second direction; source/drain regions provided outside the gate structures; and backside contact structures electrically connected to the source/drain regions and provided below the source/drain regions, wherein the insulating patterns include protrusions protruding in the vertical direction from an upper surface of the device isolation layer, and, in a region in which the insulating patterns vertically overlap the gate structures, a vertical distance between a lower surface of a lowermost channel layer among the channel layers and an upper surface of the protrusions is greater than a vertical distance between the channel layers.

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