公开(公告)号：US11076228B2

公开(公告)日：2021-07-27

申请号：US16860708

申请日：2020-04-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wookwang Lee ,  Hyungjae Im ,  Jeongho Kim ,  Kyounghoon Kim ,  Sungyong Bang ,  Yonglae Cheong

IPC: H03G11/00 ,  H04R3/00 ,  H04M1/60 ,  H04R1/02

Abstract: An electronic device is provided. The electronic device includes a display, an actuator configured to output at least one of a sound and a vibration by using the display, and a processor configured to identify whether the display is activated, identify the temperature of the electronic device if the display is activated, and control the actuator to generate at least one of a sound and a vibration at a designated frequency if the temperature is lower than a designated temperature.

公开(公告)号：US20150048449A1

公开(公告)日：2015-02-19

申请号：US14321018

申请日：2014-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changki Jeon ,  Minsuk Kim ,  Jeongho Kim ,  Yongcheol Choi

IPC: H01L29/78

CPC classification number: H01L29/7816 ,  H01L27/0629 ,  H01L27/0922 ,  H01L29/0619 ,  H01L29/063 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/7817

Abstract: A high voltage semiconductor device includes a semiconductor substrate having a first conductivity type and including a low voltage part and a high voltage part, a semiconductor layer having a second conductivity type on the semiconductor substrate, a body region having the first conductivity type on the semiconductor layer, a first buried layer having the second conductivity type between the high voltage part of the semiconductor substrate and the semiconductor layer, and a second buried layer having the first conductivity type and having sidewalls inside sidewalls of the first buried layer and extending deeper into the substrate than the first buried layer. A surface of the body region adjacent the substrate is spaced apart from a surface of the second buried layer remote from the substrate such that a portion of the semiconductor layer is disposed therebetween.

Abstract translation: 高电压半导体器件包括具有第一导电类型并包括低电压部分和高电压部分的半导体衬底，半导体衬底上具有第二导电类型的半导体层，半导体上具有第一导电类型的体区 在半导体衬底的高电压部分和半导体层之间具有第二导电类型的第一掩埋层和具有第一导电类型的第二掩埋层，并且在第一掩埋层的侧壁内侧延伸并延伸到 衬底比第一掩埋层。 与衬底相邻的本体区域的表面与远离衬底的第二掩埋层的表面间隔开，使得半导体层的一部分位于它们之间。

公开(公告)号：US20200344547A1

公开(公告)日：2020-10-29

申请号：US16860708

申请日：2020-04-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wookwang Lee ,  Hyungjae Im ,  Jeongho Kim ,  Kyounghoon Kim ,  Sungyong Bang ,  Yonglae Cheong

IPC: H04R3/00 ,  H04M1/60 ,  H04R1/02

Abstract: An electronic device is provided. The electronic device includes a display, an actuator configured to output at least one of a sound and a vibration by using the display, and a processor configured to identify whether the display is activated, identify the temperature of the electronic device if the display is activated, and control the actuator to generate at least one of a sound and a vibration at a designated frequency if the temperature is lower than a designated temperature.

公开(公告)号：US20180136713A1

公开(公告)日：2018-05-17

申请号：US15814790

申请日：2017-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaecheol Kim ,  Jinkyu Kim ,  Dongwoo Kim ,  Jeongho Kim ,  Jaesoo Chaung ,  Jongshik Ha ,  Heetae Oh ,  Hyeokseon Yu ,  Seungyoung Lee ,  Wooyoung Choi ,  Jaewoong Han ,  Mangun Hur

IPC: G06F1/32 ,  G06F15/78 ,  H03F3/217

Abstract: An electronic device includes a system-on-chip (SoC) including at least one component, a memory, and a processor functionally connected to the SoC and the memory. The processor is configured to apply a default voltage for driving the at least one component at a specific frequency. The processor is also configured to determine whether data on an offset voltage corresponding to the at least one component and the specific frequency is stored. The processor is further configured to apply the offset voltage, being different from the default voltage, to the at least one component when the data on the offset voltage is stored. Other embodiments are possible.

公开(公告)号：US10579131B2

公开(公告)日：2020-03-03

申请号：US15814790

申请日：2017-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaecheol Kim ,  Jinkyu Kim ,  Dongwoo Kim ,  Jeongho Kim ,  Jaesoo Chaung ,  Jongshik Ha ,  Heetae Oh ,  Hyeokseon Yu ,  Seungyoung Lee ,  Wooyoung Choi ,  Jaewoong Han ,  Mangun Hur

IPC: G06F1/26 ,  G06F1/32 ,  G06F1/3296 ,  G06F1/3206 ,  G06F15/78 ,  H03F3/217

Abstract: An electronic device includes a system-on-chip (SoC) including at least one component, a memory, and a processor functionally connected to the SoC and the memory. The processor is configured to apply a default voltage for driving the at least one component at a specific frequency. The processor is also configured to determine whether data on an offset voltage corresponding to the at least one component and the specific frequency is stored. The processor is further configured to apply the offset voltage, being different from the default voltage, to the at least one component when the data on the offset voltage is stored. Other embodiments are possible.