公开(公告)号：US20160372185A1

公开(公告)日：2016-12-22

申请号：US15055186

申请日：2016-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Seop Shim ,  Jae-Hong Kim ,  Jin-Man Han

IPC: G11C11/56 ,  G11C16/34

CPC classification number: G11C11/5635 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3445 ,  G11C16/3459 ,  G11C2211/5621

Abstract: A method of operating a non-volatile memory device includes receiving program data and a program address. Memory cells that correspond to the program address are selected from among memory cells in an erased state. The selected memory cells are programmed based on the program data such that each of the selected memory cells is programmed to one of a plurality of programmed states, where threshold voltage distributions of the programmed states are different from each other and are higher than a threshold voltage distribution associated with the erased state. By programming all or a portion of the memory cells corresponding to the erased state to have positive threshold voltages, degradation of the data retention capability of the memory cells may be reduced.

Abstract translation: 操作非易失性存储器件的方法包括接收程序数据和程序地址。 从擦除状态的存储单元中选择与程序地址对应的存储单元。 所选择的存储器单元基于程序数据被编程，使得每个选择的存储器单元被编程为多个编程状态中的一个，其中编程状态的阈值电压分布彼此不同并且高于阈值电压 分配与擦除状态相关联。 通过将与擦除状态对应的存储单元的全部或一部分编程为具有正阈值电压，可以降低存储单元的数据保留能力的劣化。

公开(公告)号：US09818477B2

公开(公告)日：2017-11-14

申请号：US15055186

申请日：2016-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Seop Shim ,  Jae-Hong Kim ,  Jin-Man Han

IPC: G11C11/56 ,  G11C16/34 ,  G11C16/04

CPC classification number: G11C11/5635 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3445 ,  G11C16/3459 ,  G11C2211/5621

Abstract: A method of operating a non-volatile memory device includes receiving program data and a program address. Memory cells that correspond to the program address are selected from among memory cells in an erased state. The selected memory cells are programmed based on the program data such that each of the selected memory cells is programmed to one of a plurality of programmed states, where threshold voltage distributions of the programmed states are different from each other and are higher than a threshold voltage distribution associated with the erased state. By programming all or a portion of the memory cells corresponding to the erased state to have positive threshold voltages, degradation of the data retention capability of the memory cells may be reduced.

公开(公告)号：US10061647B2

公开(公告)日：2018-08-28

申请号：US15237111

申请日：2016-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Seop Shim ,  Jae-Hong Kim ,  Sang-Soo Cha ,  Jin-Man Han

IPC: G11C29/00 ,  G06F11/10 ,  G11C29/52 ,  G11C16/10 ,  G11C16/34 ,  G11C16/20 ,  G11C16/26 ,  G11C29/02 ,  G11C29/04 ,  G11C29/50

CPC classification number: G06F11/1068 ,  G06F11/1048 ,  G11C16/10 ,  G11C16/20 ,  G11C16/26 ,  G11C16/349 ,  G11C16/3495 ,  G11C29/025 ,  G11C29/028 ,  G11C29/52 ,  G11C2029/0407 ,  G11C2029/0409 ,  G11C2029/0411 ,  G11C2029/5004

Abstract: In a method of operating a nonvolatile memory device, a plurality of pages of a first memory block of a plurality of memory blocks of a memory cell array are programmed. After programming, a dummy pulse is applied to at least some of the plurality of memory blocks at least once before a read operation on is performed on one of the plurality of pages.

公开(公告)号：US10573378B2

公开(公告)日：2020-02-25

申请号：US15783040

申请日：2017-10-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Seop Shim ,  Jae-Hong Kim ,  Jin-Man Han

IPC: G11C11/56 ,  G11C16/34 ,  G11C16/04

Abstract: Methods of operating non-volatile memory devices are provided including receiving program data and a program address. Memory cells that correspond to the program address are selected from among memory cells in an erased state. The selected memory cells are programmed based on the program data such that each of the selected memory cells is programmed to one of a plurality of programmed states, where threshold voltage distributions of the programmed states are different from each other and are higher than a threshold voltage distribution associated with the erased state. By programming all or a portion of the memory cells corresponding to the erased state to have positive threshold voltages, degradation of the data retention capability of the memory cells may be reduced.