公开(公告)号：US20140253092A1

公开(公告)日：2014-09-11

申请号：US14200318

申请日：2014-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Yub JEON ,  Jeong-Yun LEE ,  Chin-Wook CHUNG

IPC: G01N27/00

CPC classification number: H01J37/32954 ,  H01J37/32935

Abstract: To diagnose plasma in a plasma space, a plurality of floating probes are installed at a plurality of points, respectively, in a plasma space. An electron density ratio at each of the points is calculated by measuring a first probe current of each of the floating probes, the probe current including a DC component. A point ion density and a point electron temperature at each of the points are calculated by measuring a second probe current of each of the floating probes before the electron density ratio is calculated, the second probe current excluding the DC component.

Abstract translation: 为了在等离子体空间中诊断等离子体，分别在等离子体空间中的多个点处安装多个浮动探针。 通过测量每个浮动探针的第一探针电流，包括DC分量的探针电流来计算每个点处的电子密度比。 通过在计算电子密度比之前测量每个浮动探针的第二探针电流，除了直流分量之外的第二探针电流，计算每个点处的点离子密度和点电子温度。

公开(公告)号：US20140251956A1

公开(公告)日：2014-09-11

申请号：US14199160

申请日：2014-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Yub JEON ,  Jeong-Yun LEE ,  Kyung-Sun KIM ,  Tae-Gon KIM

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32577 ,  H01J37/32706 ,  H01J37/32715

Abstract: An apparatus for an etching process includes a chamber, a plasma generator disposed in the chamber, a stacked structure disposed in the chamber to support a substrate thereon and including an electrode plate and an insulation coating layer on the electrode plate, electrode rods inserted into through holes of the stacked structure to penetrate through the stacked structure, directly contacting the substrate and spaced apart from sidewalls of the through holes of the stacked structure, at least one DC pulse generator generating a DC pulse to the electrode plate and the electrode rods, first connection lines connecting the DC pulse generator to the electrode rods, and at least one second connection line connecting the DC pulse generator to a lower portion of the electrode plate.

Abstract translation: 一种用于蚀刻工艺的设备包括：室，设置在室中的等离子体发生器，堆叠结构，设置在室中以在其上支撑基板，并且在电极板上包括电极板和绝缘涂层，电极棒插入 层叠结构的孔穿透堆叠结构，直接接触基板并与堆叠结构的通孔的侧壁间隔开，至少一个DC脉冲发生器首先向电极板和电极棒产生DC脉冲 将DC脉冲发生器连接到电极棒的连接线以及将DC脉冲发生器连接到电极板的下部的至少一个第二连接线。

公开(公告)号：US20130193556A1

公开(公告)日：2013-08-01

申请号：US13749003

申请日：2013-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong-Yun LEE ,  Moo-Jin KIM

IPC: H01L49/02

CPC classification number: H01L28/40 ,  H01L27/0688 ,  H01L27/0794

Abstract: A semiconductor device includes a semiconductor substrate having a capacitor region and a resistor region. A capacitor dielectric material and a capacitor electrode are sequentially stacked on an active region in the capacitor region of the semiconductor substrate. A resistor is provided on the resistor region of the semiconductor substrate. A protection pattern is provided on a top surface of the capacitor electrode. The protection pattern is spaced apart from the capacitor electrode. The protection pattern and the resistor include the same material and have the same thickness in a direction vertical to a surface of the semiconductor substrate.

Abstract translation: 半导体器件包括具有电容器区域和电阻器区域的半导体衬底。 电容器电介质材料和电容器电极依次层叠在半导体基板的电容器区域的有源区上。 电阻器设置在半导体衬底的电阻器区域上。 在电容器电极的顶表面上提供保护图案。 保护图案与电容器电极间隔开。 保护图案和电阻器包括相同的材料并且在垂直于半导体衬底的表面的方向上具有相同的厚度。