METHOD AND APPARATUS OF DIAGNOSING PLASMA IN PLASMA SPACE
    1.
    发明申请
    METHOD AND APPARATUS OF DIAGNOSING PLASMA IN PLASMA SPACE 有权
    在等离子体空间中诊断等离子体的方法和装置

    公开(公告)号:US20140253092A1

    公开(公告)日:2014-09-11

    申请号:US14200318

    申请日:2014-03-07

    CPC classification number: H01J37/32954 H01J37/32935

    Abstract: To diagnose plasma in a plasma space, a plurality of floating probes are installed at a plurality of points, respectively, in a plasma space. An electron density ratio at each of the points is calculated by measuring a first probe current of each of the floating probes, the probe current including a DC component. A point ion density and a point electron temperature at each of the points are calculated by measuring a second probe current of each of the floating probes before the electron density ratio is calculated, the second probe current excluding the DC component.

    Abstract translation: 为了在等离子体空间中诊断等离子体,分别在等离子体空间中的多个点处安装多个浮动探针。 通过测量每个浮动探针的第一探针电流,包括DC分量的探针电流来计算每个点处的电子密度比。 通过在计算电子密度比之前测量每个浮动探针的第二探针电流,除了直流分量之外的第二探针电流,计算每个点处的点离子密度和点电子温度。

    ETCHING APPARATUS AND ETCHING METHOD
    2.
    发明申请
    ETCHING APPARATUS AND ETCHING METHOD 有权
    蚀刻装置和蚀刻方法

    公开(公告)号:US20140251956A1

    公开(公告)日:2014-09-11

    申请号:US14199160

    申请日:2014-03-06

    Abstract: An apparatus for an etching process includes a chamber, a plasma generator disposed in the chamber, a stacked structure disposed in the chamber to support a substrate thereon and including an electrode plate and an insulation coating layer on the electrode plate, electrode rods inserted into through holes of the stacked structure to penetrate through the stacked structure, directly contacting the substrate and spaced apart from sidewalls of the through holes of the stacked structure, at least one DC pulse generator generating a DC pulse to the electrode plate and the electrode rods, first connection lines connecting the DC pulse generator to the electrode rods, and at least one second connection line connecting the DC pulse generator to a lower portion of the electrode plate.

    Abstract translation: 一种用于蚀刻工艺的设备包括:室,设置在室中的等离子体发生器,堆叠结构,设置在室中以在其上支撑基板,并且在电极板上包括电极板和绝缘涂层,电极棒插入 层叠结构的孔穿透堆叠结构,直接接触基板并与堆叠结构的通孔的侧壁间隔开,至少一个DC脉冲发生器首先向电极板和电极棒产生DC脉冲 将DC脉冲发生器连接到电极棒的连接线以及将DC脉冲发生器连接到电极板的下部的至少一个第二连接线。

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