公开(公告)号：US20130193556A1

公开(公告)日：2013-08-01

申请号：US13749003

申请日：2013-01-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeong-Yun LEE ,  Moo-Jin KIM

IPC: H01L49/02

CPC classification number: H01L28/40 ,  H01L27/0688 ,  H01L27/0794

Abstract: A semiconductor device includes a semiconductor substrate having a capacitor region and a resistor region. A capacitor dielectric material and a capacitor electrode are sequentially stacked on an active region in the capacitor region of the semiconductor substrate. A resistor is provided on the resistor region of the semiconductor substrate. A protection pattern is provided on a top surface of the capacitor electrode. The protection pattern is spaced apart from the capacitor electrode. The protection pattern and the resistor include the same material and have the same thickness in a direction vertical to a surface of the semiconductor substrate.

Abstract translation: 半导体器件包括具有电容器区域和电阻器区域的半导体衬底。 电容器电介质材料和电容器电极依次层叠在半导体基板的电容器区域的有源区上。 电阻器设置在半导体衬底的电阻器区域上。 在电容器电极的顶表面上提供保护图案。 保护图案与电容器电极间隔开。 保护图案和电阻器包括相同的材料并且在垂直于半导体衬底的表面的方向上具有相同的厚度。