公开(公告)号：US20240203974A1

公开(公告)日：2024-06-20

申请号：US18596731

申请日：2024-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNG-HO DO ,  DAL-HEE LEE ,  JIN-YOUNG LIM ,  TAE-JOONG SONG ,  JONG-HOON JUNG

IPC: H01L27/02 ,  G06F30/00 ,  G11C5/06 ,  G11C8/16 ,  G11C11/412 ,  H01L21/768 ,  H01L27/088 ,  H01L27/118

CPC classification number: H01L27/0207 ,  G06F30/00 ,  G11C5/063 ,  G11C8/16 ,  G11C11/412 ,  H01L21/76895 ,  H01L27/088 ,  H01L27/11807 ,  H01L2027/11875

Abstract: An integrated circuit may include a first active region and a second active region, and the first and second active regions may extend on a substrate in a first horizontal direction in parallel to each other and have different conductivity types from each other. A first gate line may extend in a second horizontal direction crossing the first horizontal direction, and may form a first transistor with the first active region. The first transistor may include a gate to which a first input signal is applied. The first gate line may include a first partial gate line that overlaps the first active region in a perpendicular direction and that has an end on a region between the first and second active regions.