公开(公告)号：US09087789B2

公开(公告)日：2015-07-21

申请号：US13728277

申请日：2012-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： HanNa Cho ,  Dongseok Lee ,  Jungpyo Hong

IPC: H01L21/00 ,  H01L21/308 ,  H01L21/04 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/66 ,  H01L27/115 ,  H01L49/02

CPC classification number: H01L21/308 ,  H01L21/0337 ,  H01L21/04 ,  H01L21/31144 ,  H01L21/32137 ,  H01L27/11582 ,  H01L28/90 ,  H01L29/66545 ,  H01L29/66825

Abstract: Methods of manufacturing a semiconductor device are provided. The method may include forming an etch target layer on a substrate, forming a carbon layer doped with boron on the etch target layer, a top end portion of the carbon layer having a different boron concentration from a bottom end portion of the carbon layer, patterning the carbon layer to form at least one opening exposing the etch target layer, and etching the exposed etch target layer using the carbon layer as an etch mask.

Abstract translation: 提供制造半导体器件的方法。 该方法可以包括在衬底上形成蚀刻目标层，在蚀刻目标层上形成掺杂有硼的碳层，碳层的顶部部分与碳层的底端部分具有不同的硼浓度，图案化 所述碳层形成暴露所述蚀刻目标层的至少一个开口，以及使用所述碳层作为蚀刻掩模蚀刻所述暴露的蚀刻目标层。