公开(公告)号：USD1054411S1

公开(公告)日：2024-12-17

申请号：US29778663

申请日：2021-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Dongseok Lee ,  Sungjin Yum ,  Iksang Kim

公开(公告)号：USD969797S1

公开(公告)日：2022-11-15

申请号：US29680813

申请日：2019-02-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Dongseok Lee ,  Iksang Kim

公开(公告)号：USD1028972S1

公开(公告)日：2024-05-28

申请号：US29840125

申请日：2022-05-26

Applicant: Samsung Electronics Co., Ltd.

Designer： Dongseok Lee ,  Iksang Kim

Abstract: FIG. 1 is a top perspective view of a notebook, showing our new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left-side view thereof;
FIG. 5 is a right-side view thereof;
FIG. 6 is a top view thereof;
FIG. 7 is a bottom view thereof;
FIG. 8 is a bottom perspective view thereof;
FIG. 9 is an enlarged view of the encircled portion 9 in FIG. 2;
FIG. 10 is an enlarged view of the encircled portion 10 in FIG. 2;
FIG. 11 is an enlarged view of the encircled portion 11 in FIG. 4; and,
FIG. 12 is an enlarged view of the encircled portion 12 in FIG. 4.
The broken lines shown in the drawings depict portions of the notebook that form no part of the claimed design. The dot-dash broken lines in the drawings encircle portions of the claimed design that are illustrated in enlargements and form no part of the claimed design.

公开(公告)号：USD891423S1

公开(公告)日：2020-07-28

申请号：US29644389

申请日：2018-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Hoyoung Seoc ,  Dongseok Lee ,  Iksang Kim

公开(公告)号：USD807874S1

公开(公告)日：2018-01-16

申请号：US29582793

申请日：2016-10-31

Applicant: Samsung Electronics Co., Ltd.

Designer： Hoyoung Seoc ,  Dongseok Lee

公开(公告)号：US11769811B2

公开(公告)日：2023-09-26

申请号：US17548826

申请日：2021-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongho Jeon ,  Sekoo Kang ,  Keunhee Bai ,  Dongseok Lee

IPC: H01L29/423 ,  H01L29/40

CPC classification number: H01L29/4236 ,  H01L29/401 ,  H01L29/42364

Abstract: A semiconductor device includes first and second gate structures respectively on first and second active regions and an insulating layer between the first and second active regions and a separation structure between a first end portion of the first gate structure and a second end portion of the second gate structure and extending into the insulating layer. The separation structure includes a lower portion, an intermediate portion, and an upper portion, a maximum width of the intermediate portion in the first direction is greater than a maximum width of the lower portion in the first direction, and the maximum width of the intermediate portion is greater than a maximum width of the upper portion in the first direction.

公开(公告)号：US11201224B2

公开(公告)日：2021-12-14

申请号：US16820302

申请日：2020-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongho Jeon ,  Sekoo Kang ,  Keunhee Bai ,  Dongseok Lee

IPC: H01L29/423 ,  H01L29/40

Abstract: A semiconductor device includes first and second gate structures respectively on first and second active regions and an insulating layer between the first and second active regions and a separation structure between a first end portion of the first gate structure and a second end portion of the second gate structure and extending into the insulating layer. The separation structure includes a lower portion, an intermediate portion, and an upper portion, a maximum width of the intermediate portion in the first direction is greater than a maximum width of the lower portion in the first direction, and the maximum width of the intermediate portion is greater than a maximum width of the upper portion in the first direction.

公开(公告)号：USD820827S1

公开(公告)日：2018-06-19

申请号：US29607660

申请日：2017-06-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Hoyoung Seoc ,  Dongseok Lee ,  Kyungjin Lee

公开(公告)号：US20170236722A1

公开(公告)日：2017-08-17

申请号：US15042737

申请日：2016-02-12

Applicant: International Business Machines Corporation ,  STMicroelectronics, Inc. ,  Samsung Electronics Co., Ltd.

Inventor： Susan S. Fan ,  Dongseok Lee ,  David Moreau ,  Tenko Yamashita

IPC: H01L21/321 ,  H01L21/027 ,  H01L29/06 ,  H01L21/3213

CPC classification number: H01L29/0657 ,  H01L21/02236 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/823431 ,  H01L21/845

Abstract: A method of fabricating a semiconductor structure includes forming a plurality of semiconductor fins disposed on a semiconductor substrate, wherein at least one of the fins is an unwanted fin including a semiconductor material; providing a conformal protective layer over the plurality of semiconductor fins; forming a mask having an opening over the unwanted fin; removing a portion of the unwanted fin to expose a fin spike; oxidizing the fin spike to form an oxidized semiconductor material; and removing the oxidized semiconductor material to expose a fin base.

公开(公告)号：USD1047997S1

公开(公告)日：2024-10-22

申请号：US29881927

申请日：2023-01-09

Applicant: Samsung Electronics Co., Ltd.

Designer： Minji Kim ,  Dongseok Lee ,  Iksang Kim

Abstract: FIG. 1 is a front perspective view of a notebook computer showing our new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left-side view thereof;
FIG. 5 is a right-side view thereof;
FIG. 6 is a top view thereof; and
FIG. 7 is a bottom view thereof;
FIG. 8 is a bottom perspective view thereof;
FIG. 9 is an enlarged view of the encircled portion 9 in FIG. 1;
FIG. 10 is an enlarged view of the encircled portion 10 in FIG. 1;
FIG. 11 is an enlarged view of the encircled portion 11 in FIG. 2;
FIG. 12 is an enlarged view of the encircled portion 12 in FIG. 6;
FIG. 13 is an enlarged view of the encircled portion 13 in FIG. 8;
FIG. 14 is an enlarged view of the encircled portion 14 in FIG. 8; and,
FIG. 15 is an enlarged view of the encircled portion 15 in FIG. 8.
The evenly-dashed broken lines in the figures depict portions of the notebook computer that form no part of the claimed design.
The dot-dash broken lines depict the bounds of enlarged views and form no part of the claimed design.