公开(公告)号：US11282679B2

公开(公告)日：2022-03-22

申请号：US16870186

申请日：2020-05-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghyeon Na ,  Hyosin Kim ,  Seungbo Shim ,  Hadong Jin ,  Dougyong Sung ,  Minyoung Hur

IPC: H01J37/32 ,  H03H7/40 ,  H03H7/01

Abstract: A plasma control apparatus for controlling plasma to be uniformly distributed in a plasma chamber and a plasma processing system including the same are provided. The plasma control apparatus includes a transmission line configured to deliver radio frequency (RF) power to a plasma chamber through at least two frequencies, a matching circuit configured to control impedance for maximum delivery of the RF power, and a plasma control circuit configured to selectively and independently control harmonics at a very high frequency (VHF) among the at least two frequencies and to control plasma distribution in the plasma chamber by producing resonance for the harmonics.

公开(公告)号：US20240304420A1

公开(公告)日：2024-09-12

申请号：US18344307

申请日：2023-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Siyoung Koh ,  Hadong Jin ,  Namkyun Kim ,  Seungbo Shim ,  Sungyong Lim ,  Sungyeol Kim

IPC: H01J37/32 ,  G01R27/16

CPC classification number: H01J37/32183 ,  G01R27/16 ,  H01J37/32926 ,  H01J37/32935

Abstract: An apparatus for providing radio frequency (RF) power includes a load having a process chamber, a RF power generator configured to provide the RF power through a cable electrically connected to the load, and a reflected power controller configured to detect reflected power from the load in a delivery mode and configured to control the RF power according to the reflected power that was detected.