-
公开(公告)号：US11858860B2
公开(公告)日：2024-01-02
申请号：US16391767
申请日：2019-04-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Giyoung Jo , Chan Kwak , Taewon Jeong
CPC classification number: C04B35/64 , B29C33/0022 , B29C35/02 , B30B15/022 , C04B35/48 , C04B41/87 , Y10S425/029
Abstract: A sintering jig according to the disclosure includes a first plate including a plurality of protrusions and a second plate stacked on the first plate and including through holes corresponding to the protrusions. The through hole includes a cylindrical portion through which the protrusion enter and exit and a conical portion widening towards an upper surface of the second plate from the cylindrical portion.
-
公开(公告)号：US11946154B2
公开(公告)日：2024-04-02
申请号：US17126902
申请日：2020-12-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyungjun Kim , Chan Kwak , Takayoshi Sasaki , Yasuo Ebina , Changsoo Lee , Dohwon Jung , Giyoung Jo , Takaaki Taniguchi
CPC classification number: C30B1/023 , C03C17/001 , C03C17/23 , C04B2235/3258 , C04B2235/768
Abstract: Provided are a dielectric material, a device including the dielectric material, and a method of preparing the dielectric material, in which the dielectric material may include: a layered perovskite compound, wherein the layered perovskite compound may include at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) of a capacitance at 200° C. with respect to a capacitance at 40° C. may be in a range of about −15 percent (%) to about 15%, and a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).
-
3.发明授权公开(公告)号：US11538632B2
公开(公告)日：2022-12-27
申请号：US17368037
申请日：2021-07-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyeon Cheol Park , Daejin Yang , Doh Won Jung , Taewon Jeong , Giyoung Jo
Abstract: Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material: xAB3.(1−x)(BiaNab)TiO3 [Formula 1] wherein, in Formula 1, A is at least one element selected from among lanthanum group elements, rare earth metal elements, and alkaline earth metal elements, B is at least one element selected from transition metal elements, 0.1
-
公开(公告)号：US12269753B2
公开(公告)日：2025-04-08
申请号：US18356287
申请日：2023-07-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Giyoung Jo , Chan Kwak , Hyungjun Kim , Euncheol Do , Hyeoncheol Park , Changsoo Lee
IPC: C01G33/00 , C01G35/00 , C04B35/626 , C04B35/645 , H01G4/12 , H01L49/02 , H10B12/00
Abstract: A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A2B4O11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A2B4O11 material may be Na2Nb4O11 in which bandgap energy thereof is greater than that of STO. The A2B4O11 material may have relative density that is greater than 90% or more.
-
公开(公告)号：US11217660B2
公开(公告)日：2022-01-04
申请号：US16853195
申请日：2020-04-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyeoncheol Park , Chan Kwak , Euncheol Do , Giyoung Jo
IPC: C04B35/495 , H01G4/12 , H01L49/02 , H01G4/30 , H01G4/012 , C01G35/00 , H01L27/108
Abstract: Provided are a dielectric including an oxide represented by Formula 1 below and having a cubic crystal structure, a capacitor including the dielectric, a semiconductor device including the dielectric, and a method of manufacturing the dielectric. (RbxA1-x)(ByTa1-y)O3-δ In Formula 1 above, A is K, Na, Li, Cs, or a combination thereof, B is Nb, V, or a combination thereof, and 0.1≤x≤0.2, 0≤y≤0.2, and 0≤δ≤0.5 are satisfied.
-
Patent Agency Ranking
公开(公告)号：US11769630B2
公开(公告)日：2023-09-26
申请号：US17165300
申请日：2021-02-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Taewon Jeong , Hyeon Cheol Park , Daejin Yang , Doh Won Jung , Giyoung Jo
IPC: H01G4/12 , C04B35/497 , G11C11/22 , H01L49/02 , H10B53/00
CPC classification number: H01G4/1254 , C04B35/497 , G11C11/221 , H01L28/60 , H10B53/00
Abstract: Provided are a dielectric material including a compound represented by Formula 1, a device including the same, and a method of preparing the dielectric material:
(1−x)KaNabNbO3.xM(AcSbd)O3 [Formula 1]
wherein, in Formula 1, M is a Group 2 element, A is a trivalent element, and 0-
公开(公告)号：US11562857B2
公开(公告)日：2023-01-24
申请号：US17153371
申请日：2021-01-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Giyoung Jo , Hyeon Cheol Park , Daejin Yang , Doh Won Jung , Taewon Jeong
Abstract: A relaxor-ferroelectric material, a method of synthesizing the same and a device including the relaxor-ferroelectric material are provided. The relaxor-ferroelectric material includes a ferroelectric material having a first polarization characteristic. The ferroelectric material having the first polarization characteristics includes a plurality of regions having a second polarization characteristic and spaced apart from each other, and the first polarization characteristic and the second polarization characteristic are different from each other. The ferroelectric material having the first polarization characteristics and the plurality of regions have different response characteristics with respect to alternating current (AC) sweeping. The plurality of regions may include a solid solution.
-
公开(公告)号：US10947126B2
公开(公告)日：2021-03-16
申请号：US16409096
申请日：2019-05-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Doh Won Jung , Chan Kwak , Euncheol Do , Hyeon Cheol Park , Daejin Yang , Taewon Jeong , Giyoung Jo
Abstract: Provided are a dielectric, a capacitor and a semiconductor device that include the dielectric, and a method of preparing the dielectric, the dielectric including: a composition represented by Formula 1; and an oxide including a perovskite type crystal structure having a polar space group or a non-polar space group other than a Pbnm space group: AxByO3-δ wherein, in Formula 1, A is a monovalent, divalent, or trivalent cation, B is a trivalent, tetravalent, or pentavalent cation, and 0.5≤x≤1.5, 0.5≤y≤1.5, and 0≤δ≤0.5.
-
9.发明授权公开(公告)号：US12230444B2
公开(公告)日：2025-02-18
申请号：US17858552
申请日：2022-07-06
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyeon Cheol Park , Daejin Yang , Doh Won Jung , Taewon Jeong , Giyoung Jo
Abstract: Provided are a dielectric, a device including the same, and a method of preparing the dielectric. The dielectric material includes a NaNbO3 ternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbO3 ternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about −15% to about 15% in a range of about −55° C. to about +200° C.
-
公开(公告)号：US11858829B2
公开(公告)日：2024-01-02
申请号：US16819571
申请日：2020-03-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Giyoung Jo , Chan Kwak , Hyungjun Kim , Euncheol Do , Hyeoncheol Park , Changsoo Lee
IPC: C01G33/00 , C01G31/00 , C01G35/00 , C04B35/645 , H01L49/02 , C04B35/626 , H10B12/00
CPC classification number: C01G33/006 , C04B35/6261 , C04B35/62695 , C04B35/645 , H01L28/40 , H10B12/37 , C01P2002/72 , C01P2002/76 , C01P2006/10 , C01P2006/40
Abstract: A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of A2B4O11 that has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein “A” is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The A2B4O11 material may be Na2Nb4O11 in which bandgap energy thereof is greater than that of STO. The A2B4O11 material may have relative density that is greater than 90% or more.
-
-
-
-
-
-
-
-
-
Search Results
10
records
(took 0.019 seconds)
